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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQS944ENW-T1_GE3 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .034 ohm; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 175 Cel; |
| Datasheet | SQS944ENW-T1_GE3 Datasheet |
| In Stock | 2,862 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 12.7 ns |
| Maximum Drain Current (ID): | 6 A |
| Maximum Pulsed Drain Current (IDM): | 24 A |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 28.5 ns |
| JESD-30 Code: | S-PDSO-F8 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .034 ohm |
| Avalanche Energy Rating (EAS): | 13.5 mJ |
| Other Names: |
SQS944ENW-T1_GE3TR SQS944ENW-T1_GE3CT SQS944ENW-T1_GE3DKR |
| Maximum Feedback Capacitance (Crss): | 24 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
| Reference Standard: | AEC-Q101 |









