Vishay Intertechnology - SUM60020E-GE3

SUM60020E-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SUM60020E-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Terminal Position: SINGLE; No. of Terminals: 2;
Datasheet SUM60020E-GE3 Datasheet
In Stock2,924
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 86 ns
Maximum Drain Current (ID): 150 A
Maximum Pulsed Drain Current (IDM): 500 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 375 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 130 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0021 ohm
Avalanche Energy Rating (EAS): 180 mJ
Maximum Feedback Capacitance (Crss): 50 pF
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
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