Vishay Intertechnology - SUM90220E-GE3

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SUM90220E-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SUM90220E-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 100 A; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .0216 ohm;
Datasheet SUM90220E-GE3 Datasheet
In Stock1,172
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 64 A
Maximum Pulsed Drain Current (IDM): 100 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .0216 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 101 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 200 V
Peak Reflow Temperature (C): 260
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