Vishay Intertechnology - SUP90142E-GE3

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SUP90142E-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SUP90142E-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
Datasheet SUP90142E-GE3 Datasheet
In Stock82,309
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 278 ns
Maximum Drain Current (ID): 90 A
Maximum Pulsed Drain Current (IDM): 240 A
Surface Mount: NO
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 375 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 204 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0169 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 180 mJ
Maximum Feedback Capacitance (Crss): 24 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 200 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
82,309 $1.520 $125,109.680

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