Vishay Intertechnology - TEMD1030

  1. Home
  2. Vishay Intertechnology - TEMD1030
TEMD1030 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number TEMD1030
Description PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin (Sn); Maximum Dark Current: 10 nA; Configuration: SINGLE; Semiconductor Material: Silicon;
Datasheet TEMD1030 Datasheet
In Stock636
NAME DESCRIPTION
Other Names: 751-1045-1
751-1045-2
751-1045-6
Maximum Dark Current: 10 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.9 mm
Sub-Category: Photo Diodes
Minimum Reverse Breakdown Voltage: 60 V
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PIN PHOTODIODE
Peak Wavelength (nm): 940
Additional Features: DAYLIGHT FILTER
Maximum Operating Temperature: 85 Cel
Maximum Reverse Voltage: 60 V
Semiconductor Material: Silicon
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
636 - -

Popular Products

Category Top Products

SFH234S by Infineon Technologies

SFH234S

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Maximum Reverse Voltage: 20 V; Shape: ROUND;
BPV10 by Temic Semiconductors

BPV10

Temic Semiconductors

PIN PHOTODIODE; No. of Functions: 1; Configuration: SINGLE; Peak Wavelength (nm): 920; Infrared (IR) Range: YES; Size: 5 mm;
SFH873/F273 by Infineon Technologies

SFH873/F273

Infineon Technologies

Photo Diodes; No. of Functions: 1; Size: 30 mm; Configuration: SINGLE; Shape: SQUARE;
SFH203PFA by Siemens

SFH203PFA

Siemens

PIN PHOTODIODE; Nominal Light Current: .0036 mA; Configuration: SINGLE; No. of Functions: 1; Shape: ROUND; Peak Wavelength (nm): 880;
2606B by Ortel

2606B

Ortel

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs;
NDL5500P by Renesas Electronics

NDL5500P

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Semiconductor Material: InGaAs; Maximum Reverse Voltage: 120 V; Maximum Operating Temperature: 60 Cel;
HSDL-5420-OPTION-021 by Broadcom

HSDL-5420-OPTION-021

Broadcom

PIN PHOTODIODE; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Minimum Reverse Breakdown Voltage: 40 V; Shape: ROUND; Maximum Dark Current: 5 nA;
TIED85 by Texas Instruments

TIED85

Texas Instruments

TIED85 by Texas Instruments is an avalanche photodiode with a max operating temp of 125°C and min of -60°C. It has a max dark current of 0.03nA, reverse voltage of 120V, and is made of silicon. Ideal for optoelectronic applications requiring precise light detection in extreme temperature conditions.
BPX61 by Infineon Technologies

BPX61

Infineon Technologies

Infineon's BPX61 is a PIN photodiode with max. operating temp of 80°C and min. temp of -40°C. Featuring max. dark current of 30nA, it has a response time of 0.35ns and can handle up to 32V reverse voltage. Ideal for applications requiring through-hole mounting in optoelectronics and sensor systems.
SFH203 by Infineon Technologies

SFH203

Infineon Technologies

SFH203 by Infineon Technologies is a photodiode with max operating temp of 90°C and min of -30°C. It has a max dark current of 7nA, response time of 0.0000025s, and reverse voltage of 32V. Made from silicon, it's used in applications requiring THROUGH HOLE MOUNTing.
MICROFR-10035-MLP-TR by Onsemi

MICROFR-10035-MLP-TR

Onsemi

MICROFR-10035-MLP-TR by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a min reverse breakdown voltage of 24.25V, and max dark current of 81nA. This square-shaped photodiode in a surface mount package is ideal for optoelectronic applications requiring precise light detection.
SFH229 by Infineon Technologies

SFH229

Infineon Technologies

SFH229 by Infineon Technologies is a PIN photodiode with max operating temp of 100°C and min of -55°C. It has a max dark current of 5000nA, response time of 0.00000001s, and reverse voltage of 20V. Ideal for optoelectronic applications requiring precise light detection in varying temperature conditions.
SPS605A1 by Onsemi

SPS605A1

Onsemi

Photo Diodes; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: .3 nA; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel;
SD012-11-41-211 by Advanced Photonix

SD012-11-41-211

Advanced Photonix

Photo Diodes;
SRD00214C by Infineon Technologies

SRD00214C

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 20 V; Maximum Response Time: .0000000000003 s; Semiconductor Material: InGaAs;
SFH200 by Infineon Technologies

SFH200

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Additional Features: HIGH RELIABILITY, LOW NOISE; Maximum Reverse Voltage: 1 V; Infrared (IR) Range: YES;
MICROFC-30050-SMT by Onsemi

MICROFC-30050-SMT

Onsemi

MICROFC-30050-SMT by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, with reverse breakdown voltage of 24.2V and dark current up to 914nA. Ideal for optoelectronic applications requiring surface mount configuration in silicon semiconductor material.
PC5-6B-TO5 by First Sensor Ag

PC5-6B-TO5

First Sensor Ag

Photo Diodes;
HSD9-B170 by Broadcom

HSD9-B170

Broadcom

PN PHOTODIODE;
2650A by Agere Systems

2650A

Agere Systems

Photo Diodes; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;