Vishay Intertechnology - TEMD7100X01

  1. Home
  2. Vishay Intertechnology - TEMD7100X01
TEMD7100X01 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number TEMD7100X01
Description PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Reverse Voltage: 60 V; Additional Features: DAY LIGHT FILTER, HIGH SENSITIVITY; Semiconductor Material: Silicon; Nominal Light Current: .003 mA;
Datasheet TEMD7100X01 Datasheet
In Stock59,937
NAME DESCRIPTION
Other Names: TEMD7100X01CT
TEMD7100X01DKR
TEMD7100X01TR
Maximum Dark Current: 3 nA
Shape: SQUARE
Configuration: SINGLE
Size: 2 mm
Sub-Category: Photo Diodes
Minimum Reverse Breakdown Voltage: 60 V
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PIN PHOTODIODE
Nominal Light Current: .003 mA
Peak Wavelength (nm): 950
Additional Features: DAY LIGHT FILTER, HIGH SENSITIVITY
Maximum Operating Temperature: 100 Cel
Maximum Reverse Voltage: 60 V
Semiconductor Material: Silicon
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
59,937 $0.189 $11,328.093

Popular Products

Category Top Products

BPW34FASR18R-Z by Osram Opto Semiconductors

BPW34FASR18R-Z

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FASR18R-Z is a single PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with min reverse breakdown voltage of 16V. Ideal for applications requiring infrared detection and nominal light current of 0.023mA.
HSDL-5420#1L1 by Lite-on Technology

HSDL-5420#1L1

Lite-on Technology

PIN PHOTODIODE; Terminal Finish: TIN; Minimum Operating Temperature: -40 Cel; Nominal Light Current: .0016 mA; JESD-609 Code: e3; Peak Wavelength (nm): 875;
HSDL-5420 by Broadcom

HSDL-5420

Broadcom

PIN PHOTODIODE; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Nominal Light Current: .0043 mA; Minimum Reverse Breakdown Voltage: 40 V; Maximum Dark Current: 5 nA;
PC10-2-TO5 by First Sensor Ag

PC10-2-TO5

First Sensor Ag

Photo Diodes;
PDB-C216 by Laser Components

PDB-C216

Laser Components

Photo Diodes;
BPW34FA by Siemens

BPW34FA

Siemens

PIN PHOTODIODE; Maximum Dark Current: 30 nA; Peak Wavelength (nm): 870; Nominal Light Current: .04 mA; No. of Functions: 1; Shape: RECTANGULAR;
HR1103CX by Renesas Electronics

HR1103CX

Renesas Electronics

PIN PHOTODIODE; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 1000; Infrared (IR) Range: YES; Minimum Operating Temperature: -40 Cel; Shape: ROUND;
NR4210TP-AZ by Renesas Electronics

NR4210TP-AZ

Renesas Electronics

Photo Diodes;
SFH203P by Hirschmann Electronics & Kg

SFH203P

Hirschmann Electronics & Kg

PIN PHOTODIODE; No. of Functions: 1; Minimum Reverse Breakdown Voltage: 50 V; Infrared (IR) Range: YES; Maximum Operating Temperature: 80 Cel; Shape: ROUND;
MICROFC-SMA-60035-GEVB by Onsemi

MICROFC-SMA-60035-GEVB

Onsemi

AVALANCHE PHOTODIODE;
PDB-C201 by Luna Innovations

PDB-C201

Luna Innovations

Photo Diodes;
VBP104FAS by Vishay Intertechnology

VBP104FAS

Vishay Intertechnology

Vishay Intertechnology's VBP104FAS is a 2.4mm PIN photodiode with peak wavelength of 950nm. Operating temperature ranges from -40 to 100°C, with reverse breakdown voltage of 60V. Ideal for IR applications, it features matte tin finish and surface mounting option.
HR1107CR by Renesas Electronics

HR1107CR

Renesas Electronics

PIN PHOTODIODE; No. of Functions: 1; Peak Wavelength (nm): 1000; Minimum Reverse Breakdown Voltage: 20 V; Configuration: SINGLE; Minimum Operating Temperature: -20 Cel;
MICRORB-SMA-10010-GEVB-PK by Onsemi

MICRORB-SMA-10010-GEVB-PK

Onsemi

Photo Diodes;
BPW34FASR18R by Osram Opto Semiconductors

BPW34FASR18R

Osram Opto Semiconductors

BPW34FASR18R by Osram Opto Semiconductors is a single PIN photodiode with peak wavelength of 880nm. It has a min reverse breakdown voltage of 16V and operates b/w -40°C to 100°C. Ideal for applications requiring infrared detection, it features a square shape and size of 2.65mm, with nominal light current of 0.023mA and max dark current of 30nA.
BPX90K by Infineon Technologies

BPX90K

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000013 s; Maximum Reverse Voltage: 32 V; Maximum Dark Current: 200 nA; Minimum Operating Temperature: -40 Cel;
PD95-21B/TR10 by Everlight Electronics

PD95-21B/TR10

Everlight Electronics

Everlight Electronics' PD95-21B/TR10 is a 1.9mm PIN photodiode with peak wavelength of 940nm. Operating temperature ranges from -25 to 85°C, with reverse breakdown voltage of 32V. Ideal for IR applications, it features surface mounting and max dark current of 10nA.
TIED55 by Texas Instruments

TIED55

Texas Instruments

TIED55 by Texas Instruments is an avalanche photodiode with a max operating temp of 125°C and min of -60°C. It has a max dark current of 0.03nA and can handle up to 185V reverse voltage. Ideal for optoelectronic applications requiring high sensitivity in harsh environments.
BP104S by Infineon Technologies

BP104S

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 20 V; Semiconductor Material: Silicon; Maximum Operating Temperature: 80 Cel;
VBP104SR by Vishay Intertechnology

VBP104SR

Vishay Intertechnology

Vishay Intertechnology's VBP104SR is a single PIN photodiode with peak wavelength of 940nm. Operating temperature ranges from -40°C to 100°C, with reverse breakdown voltage of 60V. Ideal for infrared applications, it features matte tin terminal finish and surface mounting feature.