Vishay Intertechnology - VEMD10940FX01

  1. Home
  2. Vishay Intertechnology - VEMD10940FX01
VEMD10940FX01 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number VEMD10940FX01
Description PIN PHOTODIODE; Infrared (IR) Range: YES; Nominal Light Current: .003 mA; Configuration: SINGLE; Minimum Reverse Breakdown Voltage: 32 V; Maximum Dark Current: 10 nA;
Datasheet VEMD10940FX01 Datasheet
In Stock13,521
NAME DESCRIPTION
Other Names: VEMD10940FX01DKR
VEMD10940FX01TR
VEMD10940FX01CT
Maximum Dark Current: 10 nA
Shape: ROUND
Configuration: SINGLE
Size: 2 mm
Minimum Reverse Breakdown Voltage: 32 V
Minimum Operating Temperature: -40 Cel
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PIN PHOTODIODE
Nominal Light Current: .003 mA
Peak Wavelength (nm): 950
Additional Features: AEC-Q101
Maximum Operating Temperature: 100 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
13,521 - -

Popular Products

Category Top Products

MICROFJ-SMA-40035-GEVB by Onsemi

MICROFJ-SMA-40035-GEVB

Onsemi

AVALANCHE PHOTODIODE;
HP-3F by Kodenshi Auk

HP-3F

Kodenshi Auk

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Silicon; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 70 Cel; Maximum Dark Current: 10 nA;
2606B by Lsi

2606B

Lsi

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs;
ARRAYC-60035-64P-PCB by Onsemi

ARRAYC-60035-64P-PCB

Onsemi

AVALANCHE PHOTODIODE;
MICROFC-SMA-30050-GEVB-PK by Onsemi

MICROFC-SMA-30050-GEVB-PK

Onsemi

AVALANCHE PHOTODIODE;
NR6300EZ-AZ by Renesas Electronics

NR6300EZ-AZ

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 25 nA; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs;
MICROFJ-30020-TSV-TR by Onsemi

MICROFJ-30020-TSV-TR

Onsemi

MICROFJ-30020-TSV-TR by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.
MICROFC-10035-SMT-TR1 by Onsemi

MICROFC-10035-SMT-TR1

Onsemi

MICROFC-10035-SMT-TR1 by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a reverse breakdown voltage of 24.2V, and dark current of 49nA. Ideal for surface mount applications in optoelectronics for high sensitivity light detection.
SRD00231Z by Infineon Technologies

SRD00231Z

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Maximum Reverse Voltage: 20 V; Minimum Reverse Breakdown Voltage: 20 V;
MICROFC-10020-SMT-TR1 by Onsemi

MICROFC-10020-SMT-TR1

Onsemi

MICROFC-10020-SMT-TR1 by Onsemi is a 1mm rectangular avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 16nA. Ideal for optoelectronic applications requiring surface mount configuration.
TEFD4300 by Vishay Intertechnology

TEFD4300

Vishay Intertechnology

TEFD4300 by Vishay Intertechnology is a 3mm PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has a reverse breakdown voltage of 60V, and nominal light current of 0.027mA. Ideal for applications requiring infrared detection in through-hole mounting configurations.
SFH231 by Infineon Technologies

SFH231

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 50000 nA; Maximum Reverse Voltage: 15 V; Maximum Operating Temperature: 80 Cel;
BPV10NF by Telefunken Microelectronics

BPV10NF

Telefunken Microelectronics

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 60 V; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .0000000025 s;
KOM2125 by Infineon Technologies

KOM2125

Infineon Technologies

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000025 s;
NDL5171P by Renesas Electronics

NDL5171P

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 500 nA; Semiconductor Material: Germanium; Maximum Reverse Voltage: 48 V; Minimum Operating Temperature: -40 Cel;
BPW34S by Vishay Intertechnology

BPW34S

Vishay Intertechnology

Vishay Intertechnology's BPW34S is a single PIN photodiode with a 3mm square shape and peak wavelength of 900nm. It operates b/w -40°C to 100°C, with a min reverse breakdown voltage of 60V. Ideal for applications requiring infrared detection, it has a nominal light current of 0.05mA and max dark current of 30nA.
NDL5171P2 by Renesas Electronics

NDL5171P2

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 500 nA; Semiconductor Material: Germanium; Maximum Reverse Voltage: 48 V; Minimum Operating Temperature: -40 Cel;
SFH213FA by Siemens

SFH213FA

Siemens

PIN PHOTODIODE; Infrared (IR) Range: YES; Size: 4.95 mm; Peak Wavelength (nm): 880; No. of Functions: 1; Nominal Light Current: .065 mA;
TPS706(F) by Toshiba

TPS706(F)

Toshiba

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -30 Cel; Semiconductor Material: Silicon;
TIED86 by Texas Instruments

TIED86

Texas Instruments

TIED86 by Texas Instruments is an avalanche photodiode with a max operating temp of 125°C and min of -60°C. It has a max dark current of 0.15nA and can handle up to 120V reverse voltage. Ideal for optoelectronic applications requiring high sensitivity in extreme temperature conditions.