VR25000002103FA100 by Vishay Intertechnology | Resistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	VR25000002103FA100
Description	FIXED RESISTOR; Mounting Type: THROUGH HOLE MOUNT; Resistance: 210000 ohm; Rated Power Dissipation (P): .25 W; Maximum Operating Temperature: 155 Cel; Tolerance: 1 %;
Datasheet	VR25000002103FA100 Datasheet
In Stock	500

NAME	DESCRIPTION
Construction:	Tubular
Packing Method:	AMMO PACK
Tolerance:	1 %
Rated Temperature:	70 Cel
Mounting Type:	THROUGH HOLE MOUNT
Terminal Finish:	Matte Tin (Sn) - with Nickel (Ni) barrier
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Diameter (Lead):	.58 mm
Resistance:	210000 ohm
No. of Terminals:	2
Temperature Coef (ppm/Cel):	200
Package Style (Meter):	Axial
Length (Package):	6.5 mm
Technology:	METAL GLAZE/THICK FILM
Rated Power Dissipation (P):	.25 W
Terminal Shape:	WIRE
Operating Voltage:	1600 V
Maximum Operating Temperature:	155 Cel
Resistor Type:	FIXED RESISTOR
Reference Standard:	AEC-Q200
Diameter (Package):	2.5 mm

Pricing (USD)

Qty.	Unit Price	Ext. Price
500	-	-

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;