VS-VSKT91/14 by Vishay Intertechnology | Triggering Devices

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	VS-VSKT91/14
Description	SCR; Package Style (Meter): FLANGE MOUNT; Surface Mount: NO; Terminal Position: UPPER; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Case Connection: ISOLATED;
Datasheet	VS-VSKT91/14 Datasheet
In Stock	9

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Repetitive Peak Off-state Leakage Current:	15000 uA
Trigger Device Type:	SCR
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Surface Mount:	NO
Minimum Critical Rate of Rise of Off-state Voltage:	1000 V/us
Maximum Holding Current:	250 mA
No. of Terminals:	7
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Screw Terminals Description:	A-K-AK
Case Connection:	ISOLATED
Repetitive Peak Off-state Voltage:	1400 V
Maximum RMS On-state Current:	210 A
JEDEC-95 Code:	TO-240AA
Repetitive Peak Reverse Voltage:	1400 V
Maximum On-state Voltage:	1.73 V
Minimum Operating Temperature:	-40 Cel
Non Repetitive Peak On-state Current:	2094 A
Maximum DC Gate Trigger Voltage:	2.5 V
Maximum DC Gate Trigger Current:	150 mA
Quick Connects Description:	2G-AK-GR
Maximum On-state Current:	95 A
Reference Standard:	UL RECOGNIZED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
9	-	-

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MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.

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MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.