Vpt Components - JANTX2N2907A

  1. Home
  2. Vpt Components - JANTX2N2907A
JANTX2N2907A by Vpt Components

Image shown is a representation only.

Manufacturer Vpt Components
Manufacturer's Part Number JANTX2N2907A
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON; Maximum Operating Temperature: 200 Cel;
Datasheet JANTX2N2907A Datasheet
In Stock3,953
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): .6 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: NO
No. of Terminals: 3
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-206AA
Polarity or Channel Type: PNP
Minimum Operating Temperature: -65 Cel
Qualification: Qualified
Maximum Collector-Emitter Voltage: 60 V
Maximum Collector-Base Capacitance: 8 pF
Reference Standard: MIL-19500
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,953 - -

Popular Products

Category Top Products

BFR93AW-E6327 by Infineon Technologies

BFR93AW-E6327

Infineon Technologies

BFR93AW-E6327 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in L Band with a transition frequency of 6000 MHz, ideal for amplifier applications. This small outline package has a max power dissipation of 0.3 W and can handle up to 12 V collector-emitter voltage.
2SC5226A-4-TL-E by Onsemi

2SC5226A-4-TL-E

Onsemi

Onsemi's 2SC5226A-4-TL-E is an NPN RF BJT with a max fT of 7000 MHz. It has a max Vce of 10V and Ic of 0.07A, suitable for ultra-high frequency applications. This transistor comes in a small outline package ideal for surface mount designs.
HFA3096BZ96 by Intersil

HFA3096BZ96

Intersil

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;
MPSH10 by Zetex Plc

MPSH10

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
BFS17,215 by NXP Semiconductors

BFS17,215

NXP Semiconductors

The NXP Semiconductors BFS17,215 is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 1600 MHz and can handle a collector-emitter voltage of 15V. This transistor is commonly used in amplifier applications due to its ultra-high frequency band capabilities.
HFA3102BZ by Intersil

HFA3102BZ

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 6;
MMBTH24-7-F by Diodes Incorporated

MMBTH24-7-F

Diodes Incorporated

Diodes Inc. MMBTH24-7-F is a NPN BJT transistor for RF applications. Features include 400MHz fT, 40V VCEO, and 0.3W Ptot. Ideal for ultra-high frequency amplification in compact SOT package with Gull Wing terminals.
BFR93A by Infineon Technologies

BFR93A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .09 A;
BFT92W by Siemens

BFT92W

Siemens

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;
934063132115 by NXP Semiconductors

934063132115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;
MRF237 by Asi Semiconductor

MRF237

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-MBCY-W3;
MRF911 by Motorola

MRF911

Motorola

MRF911 by Motorola is a NPN RF BJT transistor for switching applications. With a max. collector-emitter voltage of 12V, it operates in L band with fT of 5000 MHz. This surface-mount device has 4 terminals and a min hFE of 30, making it suitable for high-frequency signal amplification.
MMBTH81D87Z by Fairchild Semiconductor

MMBTH81D87Z

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
KSC1674YBU by Onsemi

KSC1674YBU

Onsemi

KSC1674YBU by Onsemi is an NPN RF BJT transistor with a max. collector-emitter voltage of 20V and fT of 600MHz. Ideal for amplifier applications, it has a min. hFE of 120 and operates at up to 150°C. Packaged in plastic/epoxy, it features through-hole terminals and a max. power dissipation of 0.25W.
MRF237 by Motorola

MRF237

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
2N5109 by Motorola

2N5109

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .4 A; Terminal Form: WIRE;
15GN01MA-TL-E by Onsemi

15GN01MA-TL-E

Onsemi

The Onsemi 15GN01MA-TL-E is an NPN RF BJT with a max power dissipation of 0.4W, hFE of 200, and fT of 1000MHz. Ideal for high-frequency applications requiring low collector current up to 0.05A in surface-mount configurations at temperatures up to 150 °C.
MPSH10 by NXP Semiconductors

MPSH10

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .04 A; Transistor Application: SWITCHING;
BFQ256A-TAPE-7 by NXP Semiconductors

BFQ256A-TAPE-7

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; No. of Terminals: 4;
BFR92AT/R by NXP Semiconductors

BFR92AT/R

NXP Semiconductors

NXP Semiconductors' BFR92AT/R is an NPN RF BJT transistor with 3 terminals, ideal for L Band applications. It has a max power dissipation of 0.35W, fT of 5000MHz, and hFE of 40. This small outline package transistor operates up to 150°C and can handle a max collector-emitter voltage of 15V.