Western Digital Corporation - SDCFS64C10

SDCFS64C10 by Western Digital Corporation

Image shown is a representation only.

Manufacturer	Western Digital Corporation
Manufacturer's Part Number	SDCFS64C10
Description	SanDisk; Product Line: Shoot & Store; Product Type: CompactFlash; Product Name: 64MB Shoot & Store CompactFlash Card; Storage Capacity: 64 MB; Number of Memory Cards: 1;

SDCFS64C10 Technical Details

NAME	DESCRIPTION
Brand Name:	SanDisk
Form Factor:	CompactFlash
Environmental Certification:	RoHS
Environmentally Friendly:	Yes
Number of Memory Cards:	1
Product Type:	CompactFlash
Product Name:	64MB Shoot & Store CompactFlash Card
Storage Capacity:	64 MB
Product Line:	Shoot & Store

Popular Products

BSS138

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;

2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;

LL4148

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

C1210C104K5RACTU

KEMET Corporation

KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.

LM358D-T

NXP Semiconductors

LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.

FDN5618P

Onsemi

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

BSS138PS,115

NXP Semiconductors

NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.

BSS138

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

2N7002

Promax-johnton

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;

SS14

General Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;