Zetex Plc - BCX38CSTOB

  1. Home
  2. Zetex Plc - BCX38CSTOB
BCX38CSTOB by Zetex Plc

Image shown is a representation only.

Manufacturer Zetex Plc
Manufacturer's Part Number BCX38CSTOB
Description NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; No. of Elements: 1;
Datasheet BCX38CSTOB Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .8 A
Configuration: DARLINGTON
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 10000
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-W3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: WIRE
Maximum Operating Temperature: 200 Cel
Maximum VCEsat: 1.25 V
Maximum Power Dissipation Ambient: 2 W
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FMMT458TA by Zetex Plc

FMMT458TA

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .225 A; Maximum VCEsat: .5 V;
2N2219A by Semicoa

2N2219A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847C by Weitron Technology

BC847C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC846B by General Semiconductor

BC846B

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-40 by NXP Semiconductors

BC817-40

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
2N3904 by Texas Instruments

2N3904

Texas Instruments

2N3904 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A in a cylindrical package shape.
2N2219A by Baneasa S A

2N2219A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; Package Body Material: METAL; Terminal Form: WIRE;
MMBT3904 by Diotec Semiconductor Ag

MMBT3904

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
2N3906 by Kec

2N3906

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BCP56-16,115 by NXP Semiconductors

BCP56-16,115

NXP Semiconductors

BCP56-16,115 by NXP is a NPN BJT transistor with 1A IC, 80V VCE, and 180MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp.
MMBT3906 by Infineon Technologies

MMBT3906

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A;
BC817-40 by Changzhou Galaxy Century Microelectronics

BC817-40

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 45 V;
MMBT2222A by Infineon Technologies

MMBT2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;
BC847C-13-F by Diodes Incorporated

BC847C-13-F

Diodes Incorporated

Diodes Inc. BC847C-13-F is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 420, and fT of 300MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and max. collector-emitter voltage of 45V.
BC847-B by Samsung

BC847-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
PBHV8540X,115 by Nexperia

PBHV8540X,115

Nexperia

PBHV8540X,115 by Nexperia is a NPN BJT transistor with hFE of 100. It has VCE of 400V and IC of 0.5A, suitable for switching applications. This small outline transistor operates at fT of 30MHz, making it ideal for high-speed electronic circuits.
2N3906 by Texas Instruments

2N3906

Texas Instruments

2N3906 by Texas Instruments is a PNP BJT transistor with hFE of 80. It has a max IC of 0.2A and VCE of 40V, ideal for switching applications. With a max power dissipation of 0.35W and fT of 250MHz, it operates at up to 150°C, making it suitable for various electronic circuits.
SMBTA42E6327HTSA1 by Infineon Technologies

SMBTA42E6327HTSA1

Infineon Technologies

SMBTA42E6327HTSA1 by Infineon is a NPN BJT with max. VCE of 300V, IC of 0.5A, and hFE of 40. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and temp range up to 150°C. Its Gull Wing terminals make it suitable for surface mount designs.
PN2222ABU by Fairchild Semiconductor

PN2222ABU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;
2N2905A by Space Power Electronics

2N2905A

Space Power Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;