Military Buffer Amplifiers 85

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Manufacturers
    • Analog Devices
    • Calogic
    • Diodes Incorporated
    • Elantec
    • Intersil
    • Linear Technology
    • Maxim Integrated
    • NXP Semiconductors
    • National Semiconductor
    • Renesas Electronics
    • STMicroelectronics
    • Texas Instruments
    • Toshiba
Amplifier Type
    • Buffer
Temperature Grade (1)
    • Military
    • Automotive
    • Commercial
    • Commercial Extended
    • Industrial
    • Other
Terminal Form
    • Ball
    • Flat
    • Gull Wing
    • J Bend
    • No Lead
    • Pin/Peg
    • Through-Hole
    • Wire
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 20
    • 24
    • 28
    • 3
    • 32
    • 38
    • 4
    • 44
    • 48
    • 5
    • 52
    • 6
    • 7
    • 8
    • 9
Package Code
    • DFP
    • DIE
    • DIP
    • HLSOP
    • HSOP
    • HSSOP
    • HTFQFP
    • HTSSOP
    • HVQCCN
    • HVSON
    • LFQFP
    • LSSOP
    • QCCJ
    • QCCN
    • QIP
    • SFM
    • SON
    • SOP
    • SSOP
    • TO-220
    • TO-263
    • TO-3
    • TO-5
    • TO-8
    • TO-99
    • TSOP
    • TSSOP
    • VFBGA
    • VQCCN
    • VSON
    • VSSOP
    • ZIP
Package Shape
    • Rectangular
    • Round
    • Square
Total Dose (V)
    • 100k Rad(Si)
    • 300k Rad(Si)
Package Body Material
    • Ceramic
    • Ceramic, Glass-Sealed
    • Ceramic, Metal-Sealed Cofired
    • Metal
    • Plastic/Epoxy
Nominal Unity Gain Bandwidth
    • 110 MHz
    • 1750 MHz
    • 210 MHz
    • 280 MHz
    • 3100 MHz
    • 80 MHz
Maximum Negative Supply Voltage Limit
    • -10 V
    • -18 V
    • -20 V
    • -22 V
    • -40 V
    • -5.5 V
    • -6 V
    • -6.3 V
    • -6.5 V
    • -6.6 V
    • -6.75 V
    • -7 V
    • -9 V
    • -9.9 V
    • 0 V
Low-Bias
    • No
Maximum Input Offset Voltage
    • 1 mV
    • 10 mV
    • 100 mV
    • 12 mV
    • 13 mV
    • 14 mV
    • 15 mV
    • 175 mV
    • 18 mV
    • 2 mV
    • 2.5 mV
    • 20 mV
    • 20 µV
    • 220 mV
    • 25 mV
    • 27 mV
    • 28 mV
    • 3 mV
    • 3.2 mV
    • 30 mV
    • 35 mV
    • 350 µV
    • 38 mV
    • 4 mV
    • 40 mV
    • 40 µV
    • 41 mV
    • 5 mV
    • 50 mV
    • 52 mV
    • 6 mV
    • 6.5 mV
    • 60 mV
    • 60 µV
    • 600 µV
    • 65 mV
    • 7 mV
    • 7.5 mV
    • 70 mV
    • 8 mV
    • 8.2 mV
    • 800 mV
Maximum Average Bias Current (IIB)
    • -14 μA
    • 1 nA
    • 1 μA
    • 1.5 μA
    • 1.6 μA
    • 10 nA
    • 10 pA
    • 10 uA
    • 100 pA
    • 12 uA
    • 13 uA
    • 14 uA
    • 140 nA
    • 15 uA
    • 16 uA
    • 17 uA
    • 2 pA
    • 2 uA
    • 2.5 nA
    • 20 nA
    • 20 uA
    • 200 pA
    • 220 pA
    • 25 uA
    • 250 nA
    • 250 pA
    • 3 nA
    • 3.5 uA
    • 3.6 uA
    • 300 nA
    • 35 uA
    • 4 uA
    • 415 nA
    • 5 nA
    • 5 uA
    • 50 nA
    • 50 uA
    • 500 pA
    • 56 uA
    • 65 uA
    • 7 uA
    • 7.5 nA
    • 75 nA
    • 8 nA
    • 8 uA
    • 8.5 uA
    • 800 nA
    • 800 uA
    • 9.5 uA
    • 90 nA
Surface Mount
    • No
    • Yes
No. of Functions
    • 1
    • 10
    • 12
    • 18
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
    • 9
Minimum Common Mode Reject Ratio
    • 46 dB
    • 72 dB
Technology
    • BICMOS
    • Bipolar
    • CMOS
    • FET
    • Hybrid
Screening Level
    • 38535Q/M;38534H;883B
    • 38535V;38534K;883S
    • MIL-PRF-38535 Class V
    • MIL-STD-883
    • MIL-STD-883 Class B
    • MIL-STD-883 Class B (Modified)
    • MIL-STD-883 Class C
Nominal Common Mode Reject Ratio
    • 50 dB
    • 72 dB
Maximum Supply Current
    • 1 mA
    • 1.2 mA
    • 1.4 mA
    • 1.5 mA
    • 1.8 mA
    • 10 mA
    • 100 mA
    • 11.5 mA
    • 12 mA
    • 12.4 mA
    • 12.8 mA
    • 120 mA
    • 13 mA
    • 13.2 mA
    • 14 mA
    • 14.5 mA
    • 145 mA
    • 15 mA
    • 15.3 mA
    • 15.5 mA
    • 16 mA
    • 18 mA
    • 2 mA
    • 2.1 mA
    • 2.3 mA
    • 2.4 mA
    • 20 mA
    • 20.5 mA
    • 21 mA
    • 22 mA
    • 24 mA
    • 25 mA
    • 26 mA
    • 28 mA
    • 3 mA
    • 3.4 mA
    • 30 mA
    • 31 mA
    • 32 mA
    • 35.01 mA
    • 38 mA
    • 4 mA
    • 4.7 mA
    • 43 mA
    • 45 mA
    • 49 mA
    • 5.1 mA
    • 5.5 mA
    • 51.6 mA
    • 510 μA
    • 520 μA
    • 530 μA
    • 56 mA
    • 6 mA
    • 6.2 mA
    • 6.5 mA
    • 6.6 mA
    • 6.8 mA
    • 61 mA
    • 63 mA
    • 65 mA
    • 7 mA
    • 7.2 mA
    • 7.3 mA
    • 7.4 mA
    • 7.5 mA
    • 8 mA
    • 8.5 mA
    • 80 mA
    • 9 mA
    • 9.8 mA
    • 900 μA
Nominal Negative Supply Voltage (Vsup)
    • -10 V
    • -12 V
    • -15 V
    • -5 V
    • -6 V
    • 0 V
Architecture
    • Voltage Feedback
Programmable Power
    • No
Packing Method
    • Bulk
    • Rail
    • Rails
    • Tape And Reel
    • Tape And Reel, 13 inch
    • Tape And Reel, 7 inch
    • Tray
    • Tube
Nominal Supply Voltage / Vsup (V)
    • 10 V
    • 12 V
    • 14.5 V
    • 15 V
    • 16 V
    • 18 V
    • 2.7 V
    • 2.8 V
    • 3 V
    • 3.3 V
    • 4.5 V
    • 5 V
    • 6 V
Power Supplies (V)
    • 15 V
    • 16 V
    • 3.3/5 V
    • 3.3/5/±5 V
    • 3.5/12 V
    • 3/5 V
    • 3/5/±5 V
    • 4.5/16 V
    • 5 V
    • 5/±5 V
    • 5/±5/15 V
    • ±1.425/±3.25/2.85/6.5 V
    • ±10 V
    • ±12 V
    • ±12/±15 V
    • ±15 V
    • ±2.5/±6 V
    • ±3/±5 V
    • ±5 V
    • ±5/±15 V
Package Style (Meter)
    • Chip Carrier
    • Chip Carrier, Heat Sink/Slug, Very Thin Profile
    • Chip Carrier, Very Thin Profile
    • Cylindrical
    • Flange Mount
    • Flatpack
    • Flatpack, Heat Sink/Slug, Thin Profile, Fine Pitch
    • Flatpack, Low Profile, Fine Pitch
    • Grid Array, Very Thin Profile, Fine Pitch
    • In-Line
    • Small Outline
    • Small Outline, Heat Sink/Slug
    • Small Outline, Heat Sink/Slug, Low Profile
    • Small Outline, Heat Sink/Slug, Shrink Pitch
    • Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch
    • Small Outline, Heat Sink/Slug, Very Thin Profile
    • Small Outline, Low Profile, Shrink Pitch
    • Small Outline, Shrink Pitch
    • Small Outline, Thin Profile
    • Small Outline, Thin Profile, Shrink Pitch
    • Small Outline, Very Thin Profile
    • Small Outline, Very Thin Profile, Shrink Pitch
    • Uncased Chip
Package Equivalence Code
    • CAN12,.4
    • CAN3/4,.2
    • CAN8,.2
    • CAN8/9,.5FL
    • DIE OR CHIP
    • DIP14,.3
    • DIP16,.3
    • DIP8,.3
    • DIP8,.9
    • LCC16,.12SQ,20
    • LCC16,.16SQ,25
    • LCC20,.12X.16,20
    • LCC20,.35SQ
    • LCC24,.16X.2,20
    • LCC32,.2SQ,20
    • LCC32,.2X.24,20
    • LCC38,.19X.0.27,20
    • LCC44,.28SQ,20
    • LCC48,.27SQ,20
    • LCC52,.75SQ
    • QUAD12,.4SQ
    • SIP3,.1,50
    • SIP5,.1,67TB
    • SMSIP5H,.6,67TB
    • SMSIP7H,.55,50TB
    • SOLCC6,.06,20
    • SOLCC8,.11,20
    • SOLCC8,.11,25
    • SOP14,.25
    • SOP16,.25
    • SOP16,.4
    • SOP20,.3
    • SOP24,.4
    • SOP8,.25
    • SOP8,.45
    • SSOP16,.25
    • TSOP5/6,.11,37
    • TSOP6,.11,37
    • TSSOP10,.19,20
    • TSSOP14,.25
    • TSSOP16,.25
    • TSSOP20,.25
    • TSSOP24,.25
    • TSSOP28,.25
    • TSSOP48,.3,20
    • TSSOP6,.08
    • TSSOP8,.19
    • ZIP5,.15,.17,67TB
    • ZIP5,.15,.2,67TB
Minimum Slew Rate
    • 0.001 V/us
    • 0.7 V/us
    • 0.85 V/us
    • 0.9 V/us
    • 1 V/us
    • 1.7 V/us
    • 1000 V/us
    • 1100 V/us
    • 1150 V/us
    • 1200 V/us
    • 1500 V/us
    • 180 V/us
    • 200 V/us
    • 2000 V/us
    • 220 V/us
    • 2200 V/us
    • 250 V/us
    • 300 V/us
    • 350 V/us
    • 4 V/us
    • 4.5 V/us
    • 5 V/us
    • 500 V/us
    • 5000 V/us
    • 570 V/us
    • 700 V/us
    • 75 V/us
    • 800 V/us
    • 900 V/us
Sub-Category
    • Buffer Amplifiers
    • Operational Amplifiers
Nominal Slow Rate
    • 0.0011 V/us
    • 0.0013 V/us
    • 0.8 V/us
    • 1 V/us
    • 1.1 V/us
    • 1.2 V/us
    • 1.6 V/us
    • 10 V/us
    • 1000 V/us
    • 1050 V/us
    • 110 V/us
    • 1100 V/us
    • 1135 V/us
    • 1150 V/us
    • 1155 V/us
    • 116 V/us
    • 12 V/us
    • 1200 V/us
    • 1265 V/us
    • 1300 V/us
    • 1350 V/us
    • 1400 V/us
    • 15 V/us
    • 1500 V/us
    • 1600 V/us
    • 1660 V/us
    • 1750 V/us
    • 18 V/us
    • 180 V/us
    • 1800 V/us
    • 1900 V/us
    • 2.2 V/us
    • 200 V/us
    • 2000 V/us
    • 2100 V/us
    • 220 V/us
    • 2200 V/us
    • 240 V/us
    • 2400 V/us
    • 2500 V/us
    • 2700 V/us
    • 275 V/us
    • 290 V/us
    • 2900 V/us
    • 3 V/us
    • 30 V/us
    • 300 V/us
    • 3000 V/us
    • 3100 V/us
    • 3300 V/us
    • 3400 V/us
    • 350 V/us
    • 3500 V/us
    • 3600 V/us
    • 3750 V/us
    • 385 V/us
    • 4.6 V/us
    • 40 V/us
    • 400 V/us
    • 415 V/us
    • 4200 V/us
    • 4580 V/us
    • 460 V/us
    • 50 V/us
    • 5000 V/us
    • 55000 V/us
    • 6 V/us
    • 600 V/us
    • 6000 V/us
    • 650 V/us
    • 7 V/us
    • 70 V/us
    • 7000 V/us
    • 780 V/us
    • 8 V/us
    • 80 V/us
    • 800 V/us
    • 80000 V/us
    • 9 V/us
Maximum Supply Voltage Limit
    • 10 V
    • 12 V
    • 16 V
    • 16.5 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 3.465 V
    • 3.6 V
    • 40 V
    • 5.25 V
    • 5.5 V
    • 6 V
    • 6.3 V
    • 6.5 V
    • 6.6 V
    • 6.75 V
    • 7 V
    • 7.5 V
    • 9 V
    • 9.9 V
Terminal Pitch
    • 0.02 in (0.5 mm)
    • 0.025 in (0.635 mm)
    • 0.026 in (0.65 mm)
    • 0.037 in (0.95 mm)
    • 0.05 in (1.27 mm)
    • 0.067 in (1.7 mm)
    • 0.1 in (2.54 mm)
Maximum Operating Temperature
    • 100 °C (212 °F)
    • 105 °C (221 °F)
    • 125 °C (257 °F)
    • 25 °C (77 °F)
    • 70 °C (158 °F)
    • 75 °C (167 °F)
    • 85 °C (185 °F)
    • 95 °C (203 °F)
Maximum Bias Current (IIB) @25C
    • -10 μA
    • 1 nA
    • 1.5 nA
    • 1.5 uA
    • 1.6 uA
    • 10 pA
    • 10 uA
    • 13 uA
    • 15 nA
    • 15 uA
    • 150 pA
    • 16 uA
    • 17 uA
    • 2 nA
    • 2 uA
    • 2.5 nA
    • 20 uA
    • 200 pA
    • 25 pA
    • 25 uA
    • 3 pA
    • 3 uA
    • 3.6 uA
    • 300 nA
    • 35 nA
    • 35 uA
    • 4 uA
    • 40 pA
    • 400 pA
    • 45 uA
    • 5 nA
    • 5 uA
    • 50 nA
    • 50 uA
    • 500 pA
    • 500 uA
    • 55 uA
    • 6 uA
    • 60 pA
    • 600 nA
    • 7 uA
    • 700 pA
    • 9.5 uA
Frequency Compensation
    • Yes
    • Yes (AVCL >= 5)
Minimum Voltage Gain
    • 1000
Minimum Operating Temperature
    • -20 °C (-4 °F)
    • -25 °C (-13 °F)
    • -40 °C (-40 °F)
    • -55 °C (-67 °F)
    • 0 °C (32 °F)
    • 25 °C (77 °F)
Terminal Finish
    • Gold
    • Matte Tin
    • Matte Tin - annealed
    • Matte Tin Over Nickel
    • Nickel Palladium Gold Silver
    • Nickel PalladiumGold
    • Nickel/Palladium/Gold
    • Tin
    • Tin Lead
    • Tin Silver Copper
    • Tin/Lead
    • Tin/Lead (Sn85Pb15)
Terminal Position
    • Bottom
    • Dual
    • Quad
    • Single
    • Upper
    • Zig-Zag
Low-Offset
    • No
JESD-30 Code
    • O-MBCY-P12
    • O-MBCY-W12
    • O-MBCY-W3
    • O-MBCY-W8
    • O-MBFM-P2
    • R-CDFP-F16
    • R-CDIP-T14
    • R-CDIP-T8
    • R-GDIP-T14
    • R-GDIP-T8
    • R-MBCY-W8
    • R-PDIP-T14
    • R-PDIP-T16
    • R-PDIP-T8
    • R-PDSO-G14
    • R-PDSO-G16
    • R-PDSO-G20
    • R-PDSO-G24
    • R-PDSO-G28
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PQCC-N20
    • R-PQCC-N24
    • R-PQCC-N32
    • R-PQCC-N38
    • R-PQFP-G48
    • R-PSFM-T5
    • R-PSSO-G5
    • R-PSSO-G7
    • R-PZFM-T5
    • R-XDIP-T8
    • R-XDSO-G8
    • R-XQCC-N24
    • R-XQCC-N32
    • R-XQCC-N48
    • R-XSFM-T5
    • R-XUUC-N13
    • R-XUUC-N16
    • R-XUUC-N6
    • R-XUUC-N8
    • S-CDSO-G8
    • S-CQCC-N20
    • S-MQIP-T12
    • S-PBGA-B9
    • S-PDSO-G10
    • S-PDSO-G8
    • S-PDSO-N10
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-J20
    • S-PQCC-N16
    • S-PQFP-G48
    • S-XDSO-N
    • S-XDSO-N6
    • S-XDSO-N8
    • S-XQCC-N16
    • S-XQCC-N32
    • S-XQCC-N44
    • S-XQCC-N48
    • S-XQCC-N52
    • X-XUUC-N
    • X-XUUC-N13
    • X-XUUC-N4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
Maximum Seated Height
    • 0.019 in (0.4826 mm)
    • 0.024 in (0.6 mm)
    • 0.025 in (0.625 mm)
    • 0.031 in (0.8 mm)
    • 0.033 in (0.85 mm)
    • 0.035 in (0.9 mm)
    • 0.039 in (1 mm)
    • 0.043 in (1.1 mm)
    • 0.047 in (1.2 mm)
    • 0.048 in (1.22 mm)
    • 0.056 in (1.42 mm)
    • 0.057 in (1.45 mm)
    • 0.063 in (1.6 mm)
    • 0.066 in (1.68 mm)
    • 0.067 in (1.7 mm)
    • 0.068 in (1.727 mm)
    • 0.068 in (1.7272 mm)
    • 0.068 in (1.73 mm)
    • 0.069 in (1.75 mm)
    • 0.069 in (1.753 mm)
    • 0.077 in (1.95 mm)
    • 0.079 in (2 mm)
    • 0.098 in (2.49 mm)
    • 0.1 in (2.54 mm)
    • 0.104 in (2.64 mm)
    • 0.104 in (2.65 mm)
    • 0.155 in (3.937 mm)
    • 0.165 in (4.2 mm)
    • 0.18 in (4.57 mm)
    • 0.18 in (4.572 mm)
    • 0.189 in (4.79 mm)
    • 0.2 in (5.08 mm)
    • 0.202 in (5.13 mm)
    • 0.21 in (5.33 mm)
    • 0.244 in (6.1976 mm)
Width
    • 0.018 in (0.46 mm)
    • 0.049 in (1.25 mm)
    • 0.063 in (1.6 mm)
    • 0.064 in (1.625 mm)
    • 0.065 in (1.65 mm)
    • 0.069 in (1.75 mm)
    • 0.079 in (2 mm)
    • 0.11 in (2.8 mm)
    • 0.118 in (3 mm)
    • 0.153 in (3.895 mm)
    • 0.154 in (3.899 mm)
    • 0.154 in (3.9 mm)
    • 0.155 in (3.94 mm)
    • 0.157 in (4 mm)
    • 0.173 in (4.4 mm)
    • 0.197 in (5 mm)
    • 0.209 in (5.3 mm)
    • 0.24 in (6.1 mm)
    • 0.255 in (6.475 mm)
    • 0.276 in (7 mm)
    • 0.295 in (7.5 mm)
    • 0.3 in (7.62 mm)
    • 0.34 in (8.64 mm)
    • 0.35 in (8.89 mm)
    • 0.351 in (8.925 mm)
    • 0.353 in (8.965 mm)
    • 0.9 in (22.86 mm)
Qualification
    • No
    • Yes
Minimum Output Current
    • -10 A
    • 1 A
    • 1 mA
    • 10 A
    • 10 mA
    • 100 mA
    • 106 mA
    • 15 mA
    • 150 mA
    • 16 A
    • 20 mA
    • 25 mA
    • 250 mA
    • 300 mA
    • 35 mA
    • 4 mA
    • 40 mA
    • 45 mA
    • 48 A
    • 48 mA
    • 50 A
    • 50 mA
    • 50 μA
    • 55 A
    • 60 A
    • 60 mA
    • 66 mA
    • 70 A
    • 70 mA
    • 76 mA
    • 80 mA
    • 87 mA
    • 95 mA
Nominal Bandwidth (3dB)
    • 1 MHz
    • 1.28 MHz
    • 1.7 MHz
    • 10 MHz
    • 10.6 MHz
    • 100 MHz
    • 1050 MHz
    • 110 MHz
    • 12 MHz
    • 120 MHz
    • 125 MHz
    • 130 MHz
    • 140 MHz
    • 150 MHz
    • 1500 MHz
    • 1600 MHz
    • 180 MHz
    • 182 MHz
    • 2 MHz
    • 2.5 MHz
    • 20 MHz
    • 200 MHz
    • 210 MHz
    • 220 MHz
    • 225 MHz
    • 230 MHz
    • 250 MHz
    • 260 MHz
    • 270 MHz
    • 275 MHz
    • 280 MHz
    • 3.3 MHz
    • 3.5 MHz
    • 30 MHz
    • 300 MHz
    • 310 MHz
    • 3100 MHz
    • 320 MHz
    • 330 MHz
    • 340 MHz
    • 350 MHz
    • 36 MHz
    • 375 MHz
    • 380 MHz
    • 4.5 MHz
    • 40 MHz
    • 400 MHz
    • 45 MHz
    • 480 MHz
    • 49 MHz
    • 5 MHz
    • 50 MHz
    • 500 MHz
    • 52 MHz
    • 530 MHz
    • 55 MHz
    • 550 MHz
    • 590 kHz
    • 6 MHz
    • 60 MHz
    • 600 MHz
    • 63 MHz
    • 650 MHz
    • 660 MHz
    • 7 MHz
    • 70 MHz
    • 700 MHz
    • 720 MHz
    • 730 MHz
    • 750 MHz
    • 780 MHz
    • 8 MHz
    • 80 MHz
    • 800 MHz
    • 800 kHz
    • 83 MHz
    • 850 MHz
    • 90 MHz
    • 950 MHz
Micropower
    • No
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
Maximum Time At Peak Reflow Temperature (s)
    • 10 s
    • 20 s
    • 30 s
    • 40 s
Peak Reflow Temperature (C)
    • 235 °C (455 °F)
    • 240 °C (464 °F)
    • 245 °C (473 °F)
    • 260 °C (500 °F)
Length
    • 0.021 in (0.525 mm)
    • 0.063 in (1.6 mm)
    • 0.069 in (1.75 mm)
    • 0.079 in (2 mm)
    • 0.114 in (2.9 mm)
    • 0.115 in (2.92 mm)
    • 0.118 in (3 mm)
    • 0.157 in (4 mm)
    • 0.193 in (4.89 mm)
    • 0.193 in (4.9 mm)
    • 0.193 in (4.902 mm)
    • 0.193 in (4.905 mm)
    • 0.194 in (4.93 mm)
    • 0.197 in (5 mm)
    • 0.236 in (6 mm)
    • 0.255 in (6.475 mm)
    • 0.256 in (6.5 mm)
    • 0.276 in (7 mm)
    • 0.307 in (7.8 mm)
    • 0.34 in (8.6235 mm)
    • 0.341 in (8.65 mm)
    • 0.35 in (8.89 mm)
    • 0.353 in (8.965 mm)
    • 0.369 in (9.375 mm)
    • 0.374 in (9.5 mm)
    • 0.377 in (9.585 mm)
    • 0.378 in (9.59 mm)
    • 0.382 in (9.7 mm)
    • 0.386 in (9.81 mm)
    • 0.386 in (9.817 mm)
    • 0.389 in (9.88 mm)
    • 0.39 in (9.9 mm)
    • 0.4 in (10.16 mm)
    • 0.406 in (10.3 mm)
    • 0.49 in (12.446 mm)
    • 0.492 in (12.5 mm)
    • 0.496 in (12.6 mm)
    • 0.502 in (12.75 mm)
    • 0.52 in (13.21 mm)
    • 0.606 in (15.4 mm)
    • 0.72 in (18.288 mm)
    • 0.755 in (19.175 mm)
    • 0.755 in (19.18 mm)
Wideband
    • Yes
Power
    • No
Reset All
Part RoHS Manufacturer Amplifier Type Temperature Grade Terminal Form No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Nominal Unity Gain Bandwidth Maximum Negative Supply Voltage Limit Low-Bias Maximum Input Offset Voltage Maximum Average Bias Current (IIB) Surface Mount No. of Functions Minimum Common Mode Reject Ratio Technology Screening Level Nominal Common Mode Reject Ratio Maximum Supply Current Nominal Negative Supply Voltage (Vsup) Architecture Programmable Power Packing Method Nominal Supply Voltage / Vsup (V) Power Supplies (V) Package Style (Meter) Package Equivalence Code Minimum Slew Rate Sub-Category Nominal Slow Rate Maximum Supply Voltage Limit Terminal Pitch Maximum Operating Temperature Maximum Bias Current (IIB) @25C Frequency Compensation Minimum Voltage Gain Minimum Operating Temperature Terminal Finish Terminal Position Low-Offset JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Seated Height Width Qualification Minimum Output Current Nominal Bandwidth (3dB) Micropower JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Length Wideband Power

LH0002H/883

National Semiconductor

Buffer

Military

Wire

8

TO-99

Round

Metal

-22 V

10 uA

No

1

Bipolar

38535Q/M;38534H;883B

10 mA

-12 V

12 V

±12 V

Cylindrical

CAN8,.2

Buffer Amplifiers

200 V/us

22 V

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

e0

LH0033G

Maxim Integrated

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

15 mV

10 nA

No

1

Bipolar

22 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

2.5 nA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

100 MHz

e0

LH0002H

National Semiconductor

Buffer

Military

Wire

8

TO-99

Round

Metal

-22 V

10 uA

No

1

Bipolar

10 mA

-12 V

12 V

±12 V

Cylindrical

CAN8,.2

Buffer Amplifiers

200 V/us

22 V

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

30 MHz

e0

ELH0002H/883B

Elantec

Buffer

Military

Wire

8

Round

Metal

-22 V

30 mV

No

1

Bipolar

MIL-STD-883 Class B

10 mA

-12 V

12 V

±12 V

Cylindrical

CAN8,.2

Buffer Amplifiers

200 V/us

22 V

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

30 MHz

e0

LH0002H/883B

National Semiconductor

Buffer

Military

Wire

8

TO-5

Round

Metal

-22 V

No

1

Bipolar

38535Q/M;38534H;883B

10 mA

-12 V

12 V

±12 V

Cylindrical

CAN8,.2

Buffer Amplifiers

200 V/us

22 V

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

30 MHz

e0

LH0002H/883C

National Semiconductor

Buffer

Military

Wire

8

Round

Metal

1

Hybrid

MIL-STD-883 Class C

-12 V

12 V

±12 V

Cylindrical

CAN8,.2

Buffer Amplifiers

125 °C (257 °F)

-55 °C (-67 °F)

Tin/Lead

Bottom

O-MBCY-W8

No

e0

LH0033G-MIL

National Semiconductor

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

15 mV

250 pA

No

1

FET

MIL-STD-883 Class B (Modified)

22 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

2000 V/us

Buffer Amplifiers

2400 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

2.5 nA

-55 °C (-67 °F)

Tin/Lead

Bottom

O-MBCY-W12

No

200 MHz

e0

LH0002H-LF

Calogic

Buffer

Military

Wire

8

Round

Metal

-22 V

10 uA

No

1

-12 V

12 V

Cylindrical

Buffer Amplifiers

200 V/us

22 V

125 °C (257 °F)

-55 °C (-67 °F)

Bottom

O-MBCY-W8

LH0002H-MIL

National Semiconductor

Buffer

Military

Wire

8

TO-99

Round

Metal

-22 V

10 uA

No

1

Bipolar

MIL-STD-883 Class B (Modified)

-12 V

12 V

±12 V

Cylindrical

CAN8,.2

Buffer Amplifiers

200 V/us

22 V

125 °C (257 °F)

-55 °C (-67 °F)

Tin/Lead

Bottom

O-MBCY-W8

No

e0

LH0033J

National Semiconductor

Buffer

Military

Through-Hole

8

DIP

Rectangular

Plastic/Epoxy

-20 V

15 mV

2.5 nA

No

1

FET

22 mA

-15 V

15 V

±15 V

In-Line

DIP8,.9

2000 V/us

Buffer Amplifiers

2400 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

2.5 nA

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T8

0.244 in (6.1976 mm)

0.9 in (22.86 mm)

No

200 MHz

e0

0.49 in (12.446 mm)

5962R1320501VXA

Analog Devices

Buffer

Military

Flat

16

DFP

Rectangular

100k Rad(Si)

Ceramic, Metal-Sealed Cofired

Yes

1

MIL-PRF-38535 Class V

3.3 V

Flatpack

Buffer Amplifiers

6 V

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-CDFP-F16

Yes

LH0033G/883B

National Semiconductor

Buffer

Military

Wire

12

QIP

Round

Metal

-20 V

15 mV

2.5 nA

No

1

Hybrid

MIL-STD-883 Class B

22 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

2.5 nA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

200 MHz

e0

5962-8963601GC

Renesas Electronics

Buffer

Military

Wire

8

Round

Metal

-22 V

20 mV

7 uA

No

1

Bipolar

-15 V

Tray

15 V

Cylindrical

Buffer Amplifiers

1300 V/us

22 V

125 °C (257 °F)

-55 °C (-67 °F)

Gold

Bottom

O-MBCY-W8

Yes

100 mA

e4

5962-8963601PA

Renesas Electronics

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Glass-Sealed

-22 V

20 mV

7 uA

No

1

Bipolar

-15 V

Tube

15 V

In-Line

Buffer Amplifiers

1300 V/us

22 V

0.1 in (2.54 mm)

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

Yes

100 mA

e0

HA2-5002/883

Renesas Electronics

Buffer

Military

Wire

8

Round

Metal

-22 V

30 mV

7 uA

No

1

Bipolar

MIL-STD-883

-12 V

Tray

12 V

Cylindrical

Buffer Amplifiers

1300 V/us

22 V

125 °C (257 °F)

-55 °C (-67 °F)

Gold

Bottom

O-MBCY-W8

No

100 mA

110 MHz

e4

HA7-5002/883

Intersil

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Glass-Sealed

-22 V

20 mV

7 uA

No

1

Bipolar

MIL-STD-883

10 mA

-12 V

12 V

±12/±15 V

In-Line

DIP8,.3

1000 V/us

Buffer Amplifiers

1300 V/us

22 V

0.1 in (2.54 mm)

125 °C (257 °F)

7 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

100 mA

110 MHz

e0

CLC109ALC

Texas Instruments

Buffer

Military

No Lead

4

DIE

-7 V

5 mV

4 uA

Yes

1

Bipolar

4 mA

-5 V

5 V

Uncased Chip

250 V/us

350 V/us

7 V

125 °C (257 °F)

-55 °C (-67 °F)

Upper

X-XUUC-N4

No

40 mA

270 MHz

LM110JG

Texas Instruments

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic

No

1

-15 V

15 V

±15 V

In-Line

DIP8,.3

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-XDIP-T8

No

LM6125H

Texas Instruments

Buffer

Military

Wire

8

Round

Metal

-18 V

50 mV

7 uA

No

1

Cylindrical

Buffer Amplifiers

50 V/us

18 V

125 °C (257 °F)

-55 °C (-67 °F)

Bottom

O-MBCY-W8

50 MHz

LM6125H/883

Texas Instruments

Buffer

Military

Wire

8

Round

Metal

-18 V

50 mV

7 uA

No

1

MIL-STD-883

Cylindrical

Buffer Amplifiers

50 V/us

18 V

125 °C (257 °F)

-55 °C (-67 °F)

Bottom

O-MBCY-W8

50 MHz

LM110JG/883B

Texas Instruments

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic

No

1

MIL-STD-883 Class B (Modified)

-15 V

15 V

±15 V

In-Line

DIP8,.3

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-XDIP-T8

No

LM6121H/883

Texas Instruments

Buffer

Military

Wire

8

Round

Metal

-18 V

50 mV

7 uA

No

1

MIL-STD-883

-15 V

15 V

Cylindrical

Buffer Amplifiers

800 V/us

18 V

125 °C (257 °F)

-55 °C (-67 °F)

Bottom

O-MBCY-W8

50 MHz

CLC109AMC

Texas Instruments

Buffer

Military

No Lead

4

DIE

-7 V

5 mV

4 uA

Yes

1

Bipolar

4 mA

-5 V

5 V

Uncased Chip

250 V/us

350 V/us

7 V

125 °C (257 °F)

-55 °C (-67 °F)

Upper

X-XUUC-N4

No

40 mA

270 MHz

AD9630SZ

Analog Devices

Buffer

Military

Gull Wing

8

SOP

Rectangular

Ceramic

8 mV

Yes

1

Bipolar

26 mA

-5 V

5 V

±5 V

Small Outline

SOP8,.45

800 V/us

Buffer Amplifiers

0.05 in (1.27 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin/Lead

Dual

R-XDSO-G8

No

550 MHz

e0

AD9630SQ

Analog Devices

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic

8 mV

No

1

Bipolar

26 mA

-5 V

5 V

±5 V

In-Line

DIP8,.3

800 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin/Lead

Dual

R-XDIP-T8

No

550 MHz

e0

5962-9556701M2A

Analog Devices

Buffer

Military

No Lead

20

QCCN

Square

Ceramic, Metal-Sealed Cofired

-18 V

2 mV

5 uA

Yes

1

Bipolar

MIL-STD-883

8.5 mA

-5 V

5 V

±5/±15 V

Chip Carrier

LCC20,.35SQ

2000 V/us

Buffer Amplifiers

18 V

0.05 in (1.27 mm)

125 °C (257 °F)

5 uA

-55 °C (-67 °F)

Tin Lead

Quad

S-CQCC-N20

No

e0

BUF03AJ/883C

Analog Devices

Buffer

Military

Wire

8

Round

Metal

-18 V

20 mV

75 nA

No

1

MIL-STD-883

24 mA

-15 V

15 V

±15 V

Cylindrical

CAN8,.2

220 V/us

Buffer Amplifiers

220 V/us

18 V

125 °C (257 °F)

400 pA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

83 MHz

e0

HOS200SH

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

18 mV

No

1

Hybrid

20 mA

-5 V

5 V

±5 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

200 MHz

e0

BUF03BJ/883C

Analog Devices

Buffer

Military

Wire

8

Round

Metal

-18 V

35 mV

90 nA

No

1

MIL-STD-883

24 mA

-15 V

15 V

±15 V

Cylindrical

CAN8,.2

180 V/us

Buffer Amplifiers

220 V/us

18 V

125 °C (257 °F)

700 pA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

50 MHz

e0

ADLH0033G

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

15 mV

No

1

Hybrid

25 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

150 pA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

100 MHz

e0

HOS-100SHB

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

25 mV

No

1

Hybrid

MIL-STD-883 Class B (Modified)

16 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

125 MHz

e0

5962-9556701MPA

Analog Devices

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Metal-Sealed Cofired

-18 V

2 mV

5 uA

No

1

Bipolar

MIL-STD-883

8.5 mA

-5 V

5 V

±5/±15 V

In-Line

DIP8,.3

2000 V/us

Buffer Amplifiers

18 V

0.1 in (2.54 mm)

125 °C (257 °F)

5 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-CDIP-T8

No

e0

BUF03BJ/883

Analog Devices

Buffer

Military

Wire

8

Round

Metal

-18 V

35 mV

90 nA

No

1

MIL-STD-883

25 mA

-15 V

15 V

±15 V

Cylindrical

CAN8,.2

180 V/us

Buffer Amplifiers

220 V/us

18 V

125 °C (257 °F)

700 pA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

50 MHz

e0

AD9630SZ/883B

Analog Devices

Buffer

Military

Gull Wing

8

SOP

Square

Ceramic, Metal-Sealed Cofired

-7 V

8 mV

Yes

1

Bipolar

38535Q/M;38534H;883B

26 mA

-5 V

5 V

±5 V

Small Outline

SOP8,.45

700 V/us

Buffer Amplifiers

7 V

0.05 in (1.27 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

S-CDSO-G8

0.098 in (2.49 mm)

0.255 in (6.475 mm)

No

50 mA

750 MHz

e0

0.255 in (6.475 mm)

BUF03AJ

Analog Devices

Buffer

Military

Wire

8

Round

Metal

-18 V

20 mV

75 nA

No

1

24 mA

-15 V

15 V

±15 V

Cylindrical

CAN8,.2

220 V/us

Buffer Amplifiers

220 V/us

18 V

125 °C (257 °F)

400 pA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

83 MHz

e0

8001401ZX

Analog Devices

Buffer

Military

Pin/Peg

12

Round

Metal

-40 V

3 nA

No

1

Cylindrical

Buffer Amplifiers

40 V

125 °C (257 °F)

-55 °C (-67 °F)

Bottom

O-MBCY-P12

No

HOS-200SHB

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

18 mV

No

1

Hybrid

MIL-STD-883 Class B (Modified)

20 mA

-5 V

5 V

±5 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

200 MHz

e0

ADLH0033GB

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

15 mV

No

1

Hybrid

MIL-STD-883 Class B (Modified)

25 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

150 pA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

100 MHz

e0

BUF03BJ

Analog Devices

Buffer

Military

Wire

8

Round

Metal

-18 V

35 mV

90 nA

No

1

24 mA

-15 V

15 V

±15 V

Cylindrical

CAN8,.2

180 V/us

Buffer Amplifiers

220 V/us

18 V

125 °C (257 °F)

700 pA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

50 MHz

e0

BUF03AJ/883

Analog Devices

Buffer

Military

Wire

8

Round

Metal

-18 V

20 mV

75 nA

No

1

MIL-STD-883

25 mA

-15 V

15 V

±15 V

Cylindrical

CAN8,.2

220 V/us

Buffer Amplifiers

220 V/us

18 V

125 °C (257 °F)

400 pA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W8

No

83 MHz

e0

HOS-100SH

Analog Devices

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

25 mV

25 uA

No

1

Bipolar

16 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

125 MHz

e0

AD9620SD

Analog Devices

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Metal-Sealed Cofired

-7 V

8 mV

35 uA

No

1

Bipolar

-5 V

5 V

±5 V

In-Line

DIP8,.3

1500 V/us

Buffer Amplifiers

2200 V/us

7 V

0.1 in (2.54 mm)

125 °C (257 °F)

35 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-CDIP-T8

0.21 in (5.33 mm)

0.3 in (7.62 mm)

No

40 mA

80 MHz

e0

0.52 in (13.21 mm)

BUF04AZ/883

Analog Devices

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Glass-Sealed

-18 V

1 mV

5 uA

No

1

Bipolar

38535Q/M;38534H;883B

8.5 mA

-15 V

15 V

±5/±15 V

In-Line

DIP8,.3

2000 V/us

Buffer Amplifiers

3000 V/us

18 V

0.1 in (2.54 mm)

125 °C (257 °F)

5 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

50 mA

110 MHz

e0

5962R1320501VXX

Analog Devices

Buffer

Military

Flat

16

DFP

Rectangular

100k Rad(Si)

Ceramic, Metal-Sealed Cofired

Yes

1

MIL-PRF-38535 Class V

3.3 V

Flatpack

Buffer Amplifiers

6 V

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-CDFP-F16

Yes

ADLH0033G/883B

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

15 mV

No

1

Hybrid

38535Q/M;38534H;883B

22 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

150 pA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

e0

AD9630SQ/883B

Analog Devices

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Glass-Sealed

-7 V

8 mV

No

1

Bipolar

38535Q/M;38534H;883B

26 mA

-5 V

5 V

±5 V

In-Line

DIP8,.3

700 V/us

Buffer Amplifiers

7 V

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

50 mA

750 MHz

e0

ADCLK925AF/QMLR

Analog Devices

Buffer

Military

Flat

16

DFP

Rectangular

100k Rad(Si)

Ceramic, Metal-Sealed Cofired

Yes

1

MIL-PRF-38535 Class V

0 V

3.3 V

Flatpack

Buffer Amplifiers

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-CDFP-F16

HOS100SH/883B

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

25 mV

No

1

Hybrid

38535Q/M;38534H;883B

16 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

125 MHz

e0

Buffer Amplifiers

Buffer amplifiers are electronic circuits that are designed to provide a high input impedance and a low output impedance. They are used to isolate one part of a circuit from another, preventing changes in one part of the circuit from affecting the other.

The primary function of a buffer amplifier is to prevent loading effects, which occur when a device with a low input impedance is connected to a device with a high output impedance. In this scenario, the high output impedance of the first device may cause a decrease in signal strength or distortion in the second device.

By using a buffer amplifier, the high output impedance of the first device is isolated from the second device, ensuring that the signal is transferred with minimal distortion. The buffer amplifier acts as a bridge between the two devices, allowing them to operate independently.

Buffer amplifiers are commonly used in audio applications, such as preamplifiers, where they can be used to isolate a sensitive input signal from a power amplifier that requires a low impedance input. They are also used in other applications, such as instrumentation, signal conditioning, and data acquisition, where signal integrity is critical.