Military Buffer Amplifiers 85
| Part | RoHS | Manufacturer | Amplifier Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Nominal Unity Gain Bandwidth | Maximum Negative Supply Voltage Limit | Low-Bias | Maximum Input Offset Voltage | Maximum Average Bias Current (IIB) | Surface Mount | No. of Functions | Minimum Common Mode Reject Ratio | Technology | Screening Level | Nominal Common Mode Reject Ratio | Maximum Supply Current | Nominal Negative Supply Voltage (Vsup) | Architecture | Programmable Power | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Package Style (Meter) | Package Equivalence Code | Minimum Slew Rate | Sub-Category | Nominal Slow Rate | Maximum Supply Voltage Limit | Terminal Pitch | Maximum Operating Temperature | Maximum Bias Current (IIB) @25C | Frequency Compensation | Minimum Voltage Gain | Minimum Operating Temperature | Terminal Finish | Terminal Position | Low-Offset | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Width | Qualification | Minimum Output Current | Nominal Bandwidth (3dB) | Micropower | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Wideband | Power |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
Buffer |
Military |
No Lead |
20 |
QCCN |
Square |
Ceramic, Metal-Sealed Cofired |
-18 V |
2 mV |
5 uA |
Yes |
1 |
Bipolar |
-5 V |
5 V |
Chip Carrier |
18 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Quad |
S-CQCC-N20 |
No |
|||||||||||||||||||||||||||||||||||
|
Analog Devices |
Buffer |
Military |
Wire |
12 |
TO-8 |
Round |
Metal |
-20 V |
25 uA |
No |
1 |
Bipolar |
-15 V |
15 V |
Cylindrical |
1500 V/us |
20 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W12 |
No |
e0 |
|||||||||||||||||||||||||||||||||
|
Analog Devices |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
-18 V |
2 mV |
5 uA |
No |
1 |
Bipolar |
-5 V |
5 V |
In-Line |
18 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Dual |
R-CDIP-T8 |
No |
|||||||||||||||||||||||||||||||||||
|
Analog Devices |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
No |
1 |
CMOS |
-5 V |
5 V |
In-Line |
1600 V/us |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T8 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
70 mA |
310 MHz |
e0 |
245 °C (473 °F) |
|||||||||||||||||||||||||||||
|
Analog Devices |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
No |
1 |
CMOS |
-5 V |
5 V |
In-Line |
1300 V/us |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T8 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
70 mA |
330 MHz |
e0 |
245 °C (473 °F) |
|||||||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Wire |
12 |
TO-8 |
Round |
Metal |
-20 V |
15 mV |
10 nA |
No |
1 |
Bipolar |
22 mA |
-15 V |
15 V |
Cylindrical |
1000 V/us |
1500 V/us |
20 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W12 |
No |
e0 |
||||||||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Wire |
12 |
TO-8 |
Round |
Metal |
-20 V |
10 mV |
5 nA |
No |
1 |
Bipolar |
22 mA |
-15 V |
15 V |
±15 V |
Cylindrical |
QUAD12,.4SQ |
1000 V/us |
Buffer Amplifiers |
1500 V/us |
20 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
500 pA |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W12 |
No |
140 MHz |
e0 |
||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Through-Hole |
12 |
QIP |
Square |
Metal |
15 mV |
No |
1 |
Hybrid |
MIL-STD-883 Class B (Modified) |
22 mA |
-15 V |
15 V |
±15 V |
In-Line |
QUAD12,.4SQ |
1000 V/us |
Buffer Amplifiers |
0.1 in (2.54 mm) |
125 °C (257 °F) |
2.5 nA |
-55 °C (-67 °F) |
Tin/Lead |
Quad |
S-MQIP-T12 |
No |
100 MHz |
e0 |
|||||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Wire |
8 |
Round |
Metal |
100 mV |
1 |
Hybrid |
MIL-STD-883 Class B (Modified) |
65 mA |
-15 V |
15 V |
±15 V |
Cylindrical |
CAN8/9,.5FL |
2000 V/us |
Buffer Amplifiers |
125 °C (257 °F) |
500 pA |
-55 °C (-67 °F) |
Tin/Lead |
Bottom |
O-MBCY-W8 |
No |
300 MHz |
e0 |
||||||||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Wire |
12 |
TO-8 |
Round |
Metal |
-20 V |
10 mV |
7.5 nA |
No |
1 |
Bipolar |
22 mA |
-15 V |
15 V |
±5/±15 V |
Cylindrical |
QUAD12,.4SQ |
1000 V/us |
Buffer Amplifiers |
1500 V/us |
20 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
1.5 nA |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W12 |
No |
100 MHz |
e0 |
||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Through-Hole |
12 |
QIP |
Square |
Metal |
15 mV |
No |
1 |
Hybrid |
MIL-STD-883 Class B (Modified) |
22 mA |
±5/±15 V |
In-Line |
QUAD12,.4SQ |
1000 V/us |
Buffer Amplifiers |
0.1 in (2.54 mm) |
125 °C (257 °F) |
1.5 nA |
-55 °C (-67 °F) |
Tin/Lead |
Quad |
S-MQIP-T12 |
No |
100 MHz |
e0 |
|||||||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Wire |
12 |
TO-8 |
Round |
Metal |
-20 V |
10 mV |
5 nA |
No |
1 |
Bipolar |
22 mA |
-15 V |
15 V |
±15 V |
Cylindrical |
QUAD12,.4SQ |
1000 V/us |
Buffer Amplifiers |
1500 V/us |
20 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
500 pA |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W12 |
No |
140 MHz |
e0 |
||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Wire |
12 |
TO-8 |
Round |
Metal |
-20 V |
10 mV |
7.5 nA |
No |
1 |
Bipolar |
22 mA |
-15 V |
15 V |
Cylindrical |
1000 V/us |
Buffer Amplifiers |
1500 V/us |
20 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W12 |
No |
e0 |
|||||||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Pin/Peg |
2 |
TO-3 |
Round |
Metal |
-20 V |
100 mV |
500 pA |
No |
1 |
Bipolar |
65 mA |
-15 V |
15 V |
±15 V |
Flange Mount |
CAN8/9,.5FL |
2000 V/us |
Buffer Amplifiers |
6000 V/us |
20 V |
125 °C (257 °F) |
500 pA |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBFM-P2 |
No |
300 MHz |
e0 |
|||||||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
-6 V |
3 mV |
5 uA |
No |
1 |
CMOS |
14 mA |
-5 V |
5 V |
±5 V |
In-Line |
DIP8,.3 |
800 V/us |
Buffer Amplifiers |
1300 V/us |
6 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
3 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T8 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
100 mA |
330 MHz |
e0 |
||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
-6 V |
3 mV |
5 uA |
No |
1 |
CMOS |
14 mA |
-5 V |
5 V |
±5 V |
In-Line |
DIP8,.3 |
900 V/us |
Buffer Amplifiers |
1600 V/us |
6 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
3 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T8 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
100 mA |
310 MHz |
e0 |
||||||||||||||||||||
|
Maxim Integrated |
Buffer |
Military |
Pin/Peg |
2 |
TO-3 |
Round |
Metal |
-20 V |
100 mV |
500 pA |
No |
1 |
Bipolar |
-15 V |
15 V |
Flange Mount |
Buffer Amplifiers |
6000 V/us |
20 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBFM-P2 |
No |
e0 |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
8 |
Rectangular |
Ceramic, Glass-Sealed |
No |
1 |
Bipolar |
-5 V |
5 V |
In-Line |
Buffer Amplifiers |
1135 V/us |
125 °C (257 °F) |
-55 °C (-67 °F) |
Dual |
R-GDIP-T8 |
Yes |
225 MHz |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
No Lead |
20 |
QCCN |
Square |
Ceramic, Metal-Sealed Cofired |
-22 V |
20 mV |
7 uA |
Yes |
1 |
Bipolar |
-15 V |
15 V |
Chip Carrier |
Buffer Amplifiers |
1300 V/us |
22 V |
0.05 in (1.27 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Quad |
S-CQCC-N20 |
0.1 in (2.54 mm) |
0.35 in (8.89 mm) |
Yes |
100 mA |
0.35 in (8.89 mm) |
||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
-22 V |
20 mV |
7 uA |
No |
1 |
Bipolar |
-15 V |
15 V |
In-Line |
Buffer Amplifiers |
1300 V/us |
22 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Dual |
R-GDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
Yes |
100 mA |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
20 mV |
No |
1 |
Bipolar |
38535V;38534K;883S |
-5 V |
5 V |
±5 V |
In-Line |
DIP8,.3 |
Buffer Amplifiers |
1155 V/us |
0.1 in (2.54 mm) |
125 °C (257 °F) |
25 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
340 MHz |
e0 |
||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
No Lead |
52 |
QCCN |
Square |
Ceramic |
Yes |
1 |
Hybrid |
24 mA |
±5/±15 V |
Chip Carrier |
LCC52,.75SQ |
900 V/us |
Buffer Amplifiers |
0.05 in (1.27 mm) |
125 °C (257 °F) |
2.5 nA |
-55 °C (-67 °F) |
Quad |
S-XQCC-N52 |
No |
350 MHz |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
300k Rad(Si) |
Ceramic, Glass-Sealed |
20 mV |
No |
1 |
Bipolar |
38535V;38534K;883S |
-5 V |
5 V |
±5 V |
In-Line |
DIP8,.3 |
Buffer Amplifiers |
1155 V/us |
0.1 in (2.54 mm) |
125 °C (257 °F) |
25 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
340 MHz |
e0 |
|||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Wire |
8 |
Rectangular |
Metal |
-22 V |
30 mV |
10 uA |
No |
1 |
Tray |
12 V |
Cylindrical |
Buffer Amplifiers |
0.0013 V/us |
22 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
R-MBCY-W8 |
110 MHz |
e0 |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
20 mV |
No |
1 |
Bipolar |
38535V;38534K;883S |
-5 V |
5 V |
±5 V |
In-Line |
DIP8,.3 |
Buffer Amplifiers |
1155 V/us |
0.1 in (2.54 mm) |
125 °C (257 °F) |
25 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-CDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
340 MHz |
e0 |
|||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
14 |
DIP |
Rectangular |
300k Rad(Si) |
Ceramic, Glass-Sealed |
-6 V |
20 mV |
No |
4 |
Bipolar |
MIL-PRF-38535 Class V |
-5 V |
5 V |
In-Line |
Buffer Amplifiers |
1155 V/us |
6 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Dual |
R-GDIP-T14 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
50 mA |
340 MHz |
|||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
14 |
DIP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
-6 V |
20 mV |
No |
4 |
Bipolar |
MIL-PRF-38535 Class V |
-5 V |
5 V |
±5 V |
In-Line |
DIP14,.3 |
Buffer Amplifiers |
1155 V/us |
6 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
25 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-CDIP-T14 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
50 mA |
340 MHz |
e0 |
||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
14 |
DIP |
Rectangular |
300k Rad(Si) |
Ceramic, Glass-Sealed |
-6 V |
20 mV |
No |
4 |
Bipolar |
MIL-PRF-38535 Class V |
-5 V |
5 V |
±5 V |
In-Line |
DIP14,.3 |
Buffer Amplifiers |
1155 V/us |
6 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
25 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T14 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
50 mA |
340 MHz |
e0 |
||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
14 |
DIP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
-6 V |
20 mV |
No |
4 |
Bipolar |
MIL-PRF-38535 Class V |
-5 V |
5 V |
±5 V |
In-Line |
DIP14,.3 |
Buffer Amplifiers |
1155 V/us |
6 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
25 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-CDIP-T14 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
50 mA |
340 MHz |
e0 |
||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
300k Rad(Si) |
Ceramic, Glass-Sealed |
20 mV |
No |
1 |
Bipolar |
MIL-PRF-38535 Class V |
-5 V |
5 V |
±5 V |
In-Line |
DIP8,.3 |
Buffer Amplifiers |
1660 V/us |
0.1 in (2.54 mm) |
125 °C (257 °F) |
25 uA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
225 MHz |
e0 |
|||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
No Lead |
20 |
QCCN |
Square |
Ceramic, Metal-Sealed Cofired |
-22 V |
30 mV |
7 uA |
Yes |
1 |
Bipolar |
MIL-STD-883 |
-12 V |
Tube |
12 V |
Chip Carrier |
Buffer Amplifiers |
1300 V/us |
22 V |
0.05 in (1.27 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Quad |
S-CQCC-N20 |
0.1 in (2.54 mm) |
0.35 in (8.89 mm) |
No |
100 mA |
110 MHz |
e0 |
0.35 in (8.89 mm) |
|||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
No |
1 |
Bipolar |
-5 V |
5 V |
In-Line |
Buffer Amplifiers |
1660 V/us |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Gold |
Dual |
R-GDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
Yes |
225 MHz |
e4 |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
No Lead |
52 |
QCCN |
Square |
Ceramic |
Yes |
1 |
Hybrid |
38535Q/M;38534H;883B |
24 mA |
±5/±15 V |
Chip Carrier |
LCC52,.75SQ |
900 V/us |
Buffer Amplifiers |
0.05 in (1.27 mm) |
125 °C (257 °F) |
2.5 nA |
-55 °C (-67 °F) |
Quad |
S-XQCC-N52 |
No |
350 MHz |
||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
Buffer |
Military |
Wire |
8 |
Round |
Metal |
-22 V |
30 mV |
10 uA |
No |
1 |
Bipolar |
-12 V |
Tray |
12 V |
Cylindrical |
Buffer Amplifiers |
1300 V/us |
22 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Gold |
Bottom |
O-MBCY-W8 |
No |
110 MHz |
e4 |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
12 |
QIP |
Square |
Metal |
10 mV |
No |
1 |
38535Q/M;38534H;883B |
22 mA |
-15 V |
15 V |
±15 V |
In-Line |
QUAD12,.4SQ |
1000 V/us |
Buffer Amplifiers |
0.1 in (2.54 mm) |
125 °C (257 °F) |
500 pA |
-55 °C (-67 °F) |
Quad |
S-MQIP-T12 |
No |
140 MHz |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
No |
1 |
Bipolar |
-5 V |
5 V |
In-Line |
Buffer Amplifiers |
1155 V/us |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Dual |
R-CDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
340 MHz |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Buffer |
Military |
Wire |
8 |
Round |
Metal |
-22 V |
20 mV |
7 uA |
No |
1 |
Bipolar |
-15 V |
15 V |
Cylindrical |
Buffer Amplifiers |
1300 V/us |
22 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Bottom |
O-MBCY-W8 |
Yes |
100 mA |
Buffer amplifiers are electronic circuits that are designed to provide a high input impedance and a low output impedance. They are used to isolate one part of a circuit from another, preventing changes in one part of the circuit from affecting the other.
The primary function of a buffer amplifier is to prevent loading effects, which occur when a device with a low input impedance is connected to a device with a high output impedance. In this scenario, the high output impedance of the first device may cause a decrease in signal strength or distortion in the second device.
By using a buffer amplifier, the high output impedance of the first device is isolated from the second device, ensuring that the signal is transferred with minimal distortion. The buffer amplifier acts as a bridge between the two devices, allowing them to operate independently.
Buffer amplifiers are commonly used in audio applications, such as preamplifiers, where they can be used to isolate a sensitive input signal from a power amplifier that requires a low impedance input. They are also used in other applications, such as instrumentation, signal conditioning, and data acquisition, where signal integrity is critical.