Through-Hole Buffer Amplifiers 121

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Part RoHS Manufacturer Amplifier Type Temperature Grade Terminal Form No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Nominal Unity Gain Bandwidth Maximum Negative Supply Voltage Limit Low-Bias Maximum Input Offset Voltage Maximum Average Bias Current (IIB) Surface Mount No. of Functions Minimum Common Mode Reject Ratio Technology Screening Level Nominal Common Mode Reject Ratio Maximum Supply Current Nominal Negative Supply Voltage (Vsup) Architecture Programmable Power Packing Method Nominal Supply Voltage / Vsup (V) Power Supplies (V) Package Style (Meter) Package Equivalence Code Minimum Slew Rate Sub-Category Nominal Slow Rate Maximum Supply Voltage Limit Terminal Pitch Maximum Operating Temperature Maximum Bias Current (IIB) @25C Frequency Compensation Minimum Voltage Gain Minimum Operating Temperature Terminal Finish Terminal Position Low-Offset JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Seated Height Width Qualification Minimum Output Current Nominal Bandwidth (3dB) Micropower JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Length Wideband Power

MAX467EPE

Maxim Integrated

Buffer

Industrial

Through-Hole

16

DIP

Rectangular

Plastic/Epoxy

-6 V

15 mV

5 uA

No

3

Bipolar

100 mA

-5 V

5 V

±5 V

In-Line

DIP16,.3

Buffer Amplifiers

200 V/us

6 V

0.1 in (2.54 mm)

85 °C (185 °F)

3 uA

-40 °C (-40 °F)

Tin Lead

Dual

R-PDIP-T16

1

0.18 in (4.572 mm)

0.3 in (7.62 mm)

No

20 mA

100 MHz

e0

0.755 in (19.175 mm)

HS7B-1115RH-Q

Renesas Electronics

Buffer

Through-Hole

8

Rectangular

300k Rad(Si)

Ceramic, Metal-Sealed Cofired

No

1

Bipolar

1135 V/us

125 °C (257 °F)

-55 °C (-67 °F)

Gold

Dual

R-CDIP-T8

225 MHz

e4

5962F9678501VPX

Renesas Electronics

Buffer

Military

Through-Hole

8

Rectangular

Ceramic, Glass-Sealed

No

1

Bipolar

-5 V

5 V

In-Line

Buffer Amplifiers

1135 V/us

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-GDIP-T8

Yes

225 MHz

HFA1412IPZ

Renesas Electronics

Buffer

Industrial

Through-Hole

14

DIP

Rectangular

Plastic/Epoxy

-5.5 V

25 uA

No

4

-5 V

5 V

In-Line

Buffer Amplifiers

1150 V/us

5.5 V

85 °C (185 °F)

-40 °C (-40 °F)

Matte Tin

Dual

R-PDIP-T14

50 mA

210 MHz

e3

5962-8963601PX

Renesas Electronics

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Glass-Sealed

-22 V

20 mV

7 uA

No

1

Bipolar

-15 V

15 V

In-Line

Buffer Amplifiers

1300 V/us

22 V

0.1 in (2.54 mm)

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

Yes

100 mA

HS7-1212RH-Q

Renesas Electronics

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Glass-Sealed

20 mV

No

1

Bipolar

38535V;38534K;883S

-5 V

5 V

±5 V

In-Line

DIP8,.3

Buffer Amplifiers

1155 V/us

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

340 MHz

e0

EL2072CN

Renesas Electronics

Buffer

Industrial

Through-Hole

8

DIP

Rectangular

Plastic/Epoxy

-7 V

50 uA

No

1

Bipolar

-5 V

5 V

In-Line

Buffer Amplifiers

800 V/us

7 V

85 °C (185 °F)

-40 °C (-40 °F)

Dual

R-PDIP-T8

50 mA

730 MHz

5962F9683101VPA

Renesas Electronics

Buffer

Military

Through-Hole

8

DIP

Rectangular

300k Rad(Si)

Ceramic, Glass-Sealed

20 mV

No

1

Bipolar

38535V;38534K;883S

-5 V

5 V

±5 V

In-Line

DIP8,.3

Buffer Amplifiers

1155 V/us

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

340 MHz

e0

5962F9683101VPC

Renesas Electronics

Buffer

Military

Through-Hole

8

DIP

Rectangular

300k Rad(Si)

Ceramic, Metal-Sealed Cofired

20 mV

No

1

Bipolar

38535V;38534K;883S

-5 V

5 V

±5 V

In-Line

DIP8,.3

Buffer Amplifiers

1155 V/us

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-CDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

340 MHz

e0

HS1B-1412RH-Q

Renesas Electronics

Buffer

Military

Through-Hole

14

DIP

Rectangular

300k Rad(Si)

Ceramic, Glass-Sealed

-6 V

20 mV

No

4

Bipolar

MIL-PRF-38535 Class V

-5 V

5 V

In-Line

Buffer Amplifiers

1155 V/us

6 V

0.1 in (2.54 mm)

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-GDIP-T14

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

50 mA

340 MHz

HS1-1412RH-Q

Renesas Electronics

Buffer

Military

Through-Hole

14

DIP

Rectangular

300k Rad(Si)

Ceramic, Metal-Sealed Cofired

-6 V

20 mV

No

4

Bipolar

MIL-PRF-38535 Class V

-5 V

5 V

±5 V

In-Line

DIP14,.3

Buffer Amplifiers

1155 V/us

6 V

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-CDIP-T14

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

50 mA

340 MHz

e0

5962F9683401VCC

Renesas Electronics

Buffer

Military

Through-Hole

14

DIP

Rectangular

300k Rad(Si)

Ceramic, Glass-Sealed

-6 V

20 mV

No

4

Bipolar

MIL-PRF-38535 Class V

-5 V

5 V

±5 V

In-Line

DIP14,.3

Buffer Amplifiers

1155 V/us

6 V

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T14

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

50 mA

340 MHz

e0

5962F9683401VCA

Renesas Electronics

Buffer

Military

Through-Hole

14

DIP

Rectangular

300k Rad(Si)

Ceramic, Metal-Sealed Cofired

-6 V

20 mV

No

4

Bipolar

MIL-PRF-38535 Class V

-5 V

5 V

±5 V

In-Line

DIP14,.3

Buffer Amplifiers

1155 V/us

6 V

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-CDIP-T14

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

50 mA

340 MHz

e0

5962F9678501VPA

Renesas Electronics

Buffer

Military

Through-Hole

8

DIP

Rectangular

300k Rad(Si)

Ceramic, Glass-Sealed

20 mV

No

1

Bipolar

MIL-PRF-38535 Class V

-5 V

5 V

±5 V

In-Line

DIP8,.3

Buffer Amplifiers

1660 V/us

0.1 in (2.54 mm)

125 °C (257 °F)

25 uA

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

225 MHz

e0

HA3-5033-5

Renesas Electronics

Buffer

Commercial Extended

Through-Hole

8

DIP

Rectangular

Plastic/Epoxy

-20 V

25 mV

50 uA

No

1

Bipolar

-12 V

12 V

In-Line

Buffer Amplifiers

0.0011 V/us

20 V

0.1 in (2.54 mm)

75 °C (167 °F)

0 °C (32 °F)

Dual

R-PDIP-T8

0.21 in (5.33 mm)

0.3 in (7.62 mm)

80 mA

250 MHz

0.377 in (9.585 mm)

5962F9678501VPC

Renesas Electronics

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Glass-Sealed

No

1

Bipolar

-5 V

5 V

In-Line

Buffer Amplifiers

1660 V/us

0.1 in (2.54 mm)

125 °C (257 °F)

-55 °C (-67 °F)

Gold

Dual

R-GDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

Yes

225 MHz

e4

HA4600CPZ

Renesas Electronics

Buffer

Through-Hole

8

Rectangular

Plastic/Epoxy

-6 V

50 uA

No

1

13 mA

-5 V

5 V

Buffer Amplifiers

1750 V/us

6 V

70 °C (158 °F)

0 °C (32 °F)

Matte Tin

Dual

R-PDIP-T8

15 mA

480 MHz

e3

EL2002CN

Renesas Electronics

Buffer

Commercial Extended

Through-Hole

8

DIP

Rectangular

Plastic/Epoxy

-18 V

50 mV

No

1

Bipolar

-15 V

15 V

In-Line

Buffer Amplifiers

2000 V/us

18 V

75 °C (167 °F)

0 °C (32 °F)

Dual

R-PDIP-T8

95 mA

EL2005G/883B

Renesas Electronics

Buffer

Military

Through-Hole

12

QIP

Square

Metal

10 mV

No

1

38535Q/M;38534H;883B

22 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

500 pA

-55 °C (-67 °F)

Quad

S-MQIP-T12

No

140 MHz

HFA1115IP

Renesas Electronics

Buffer

Through-Hole

8

DIP

Rectangular

Plastic/Epoxy

-5.5 V

25 uA

No

1

Bipolar

7.3 mA

-5 V

5 V

In-Line

1265 V/us

5.5 V

85 °C (185 °F)

15 uA

-40 °C (-40 °F)

Dual

R-PDIP-T8

50 mA

225 MHz

HS7B-1212RH-Q

Renesas Electronics

Buffer

Military

Through-Hole

8

DIP

Rectangular

Ceramic, Metal-Sealed Cofired

No

1

Bipolar

-5 V

5 V

In-Line

Buffer Amplifiers

1155 V/us

0.1 in (2.54 mm)

125 °C (257 °F)

-55 °C (-67 °F)

Dual

R-CDIP-T8

0.2 in (5.08 mm)

0.3 in (7.62 mm)

No

340 MHz

HFA1112IP

Renesas Electronics

Buffer

Industrial

Through-Hole

8

DIP

Rectangular

Plastic/Epoxy

-6 V

65 uA

No

1

Bipolar

-5 V

5 V

In-Line

Buffer Amplifiers

1900 V/us

6 V

0.1 in (2.54 mm)

85 °C (185 °F)

-40 °C (-40 °F)

Dual

R-PDIP-T8

0.21 in (5.33 mm)

0.3 in (7.62 mm)

50 mA

850 MHz

0.377 in (9.585 mm)

HA3-5033-7

Renesas Electronics

Buffer

Commercial

Through-Hole

8

DIP

Rectangular

Plastic/Epoxy

25 mV

No

1

Bipolar

30 mA

-12 V

12 V

±12 V

In-Line

DIP8,.3

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

70 °C (158 °F)

35 nA

0 °C (32 °F)

Tin/Lead

Dual

R-PDIP-T8

250 MHz

e0

HFA1412IP

Renesas Electronics

Buffer

Industrial

Through-Hole

14

DIP

Rectangular

Plastic/Epoxy

-5.5 V

25 uA

No

4

-5 V

5 V

In-Line

Buffer Amplifiers

1150 V/us

5.5 V

85 °C (185 °F)

-40 °C (-40 °F)

Dual

R-PDIP-T14

50 mA

210 MHz

EL2002ACN

Renesas Electronics

Buffer

Commercial Extended

Through-Hole

8

DIP

Rectangular

Plastic/Epoxy

-18 V

50 mV

No

1

Bipolar

-15 V

15 V

In-Line

Buffer Amplifiers

2000 V/us

18 V

75 °C (167 °F)

0 °C (32 °F)

Dual

R-PDIP-T8

95 mA

Buffer Amplifiers

Buffer amplifiers are electronic circuits that are designed to provide a high input impedance and a low output impedance. They are used to isolate one part of a circuit from another, preventing changes in one part of the circuit from affecting the other.

The primary function of a buffer amplifier is to prevent loading effects, which occur when a device with a low input impedance is connected to a device with a high output impedance. In this scenario, the high output impedance of the first device may cause a decrease in signal strength or distortion in the second device.

By using a buffer amplifier, the high output impedance of the first device is isolated from the second device, ensuring that the signal is transferred with minimal distortion. The buffer amplifier acts as a bridge between the two devices, allowing them to operate independently.

Buffer amplifiers are commonly used in audio applications, such as preamplifiers, where they can be used to isolate a sensitive input signal from a power amplifier that requires a low impedance input. They are also used in other applications, such as instrumentation, signal conditioning, and data acquisition, where signal integrity is critical.