10 ppm Crystal Oscillators 1,549

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Maximum Operating Temperature
FL3740015	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	16 pF	AT-CUT; TR, 7 INCH	40 ohm	15 %	-40 Cel	GOLD OVER NICKEL	e4	37.4 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)	85 Cel
FL374WFBR2	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	1 PPM/FIRST YEAR	16 pF	AT CUT; TR, 7 INCH	60 ohm	10 %	-20 Cel	GOLD OVER NICKEL	e4	37.4 MHz	10 uW	L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)	85 Cel
NKS2HAA1-52.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-20.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	10 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-33.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
FL1600043	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	9 pF	AT CUT; TR, 7 INCH	60 ohm	10 %	-20 Cel	GOLD OVER NICKEL	e4	16 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)	85 Cel
FH3200011	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	10 pF	AT CUT; TR, 7 INCH	60 ohm	10 %	0 Cel			32 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2HAA1-30.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-24.5760-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	10 %	-20 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-66.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2HAA1-27.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	10 %	-20 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NES5HAA1-08.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	10 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm	70 Cel
FY2500068	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	10 pF	AT-CUT; TR, 7 INCH	50 ohm	100000 %	-10 Cel			25 MHz	10 uW	L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)	70 Cel
NKS2HAA1-37.5000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-54.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-54.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NES5HAA1-08.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; MIL-STD-883	40 ohm	10 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm	70 Cel
NKS2HAA1-24.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NES5HAA1-08.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	10 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm	70 Cel
NKS2HAA1-38.4000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-12.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	32 pF	AT CUT; BULK	150 ohm	10 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2HAA1-66.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	32 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2HAA1-40.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-37.5000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-30.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
FL260WFMR1	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	9 pF	AT-CUT; TR, 7 INCH	60 ohm	10 %	-20 Cel	GOLD OVER NICKEL		26 MHz	10 uW	L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)	85 Cel
FW3740009	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	11 pF	AT-CUT; TR, 7 INCH	100 ohm	15 %	-20 Cel			37.4 MHz	10 uW	L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)	70 Cel
NKS2HAA1-25.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	32 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2HAA1-24.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	10 %	-20 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
XR32J1H031.999960F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	60 ohm	50 %	-40 Cel			31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	105 Cel
NKS2HAA1-12.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	32 pF	AT CUT; TR	150 ohm	10 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
FW374WFMR1	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	8 pF	AT-CUT; TR, 7 INCH	30 ohm	100000 %	-30 Cel			37.4 MHz	10 uW	L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)	85 Cel
NKS2HAA1-40.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-32.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NES5HAA1-08.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	10 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm	70 Cel
NKS2HAA1-25.0000-16(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; TR	80 ohm	10 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2HAA1-38.4000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-24.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	10 %	-20 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
FL2600177Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	10 pF	AT-CUT; TR, 7 INCH	50 ohm	20 %	-20 Cel	GOLD OVER NICKEL	e4	26 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)	70 Cel
FL2000038	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; TR, 7 INCH	50 ohm	10 %	-20 Cel	GOLD OVER NICKEL	e4	20 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)	85 Cel
NKS2HAA1-32.7680-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-66.0000-16(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2HAA1-32.7680-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-48.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	10 %	-20 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2HAA1-12.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; BULK	150 ohm	10 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2HAA1-12.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; BULK	150 ohm	10 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NES5HAA1-50.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	10 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm	70 Cel
FL1600080	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	10 pF	AT CUT; TR, 7 INCH	80 ohm	10 %	-20 Cel	GOLD OVER NICKEL	e4	16 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)	70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance