10 ppm Crystal Oscillators 1,549

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

NKS2HAA1-66.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

10 %

-20 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

NKS2HAA1-27.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

10 %

-20 Cel

27 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2HAA1-38.4000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2HAA1-37.5000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

37.5 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2HAA1-52.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

10 %

-20 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2HAA1-40.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

40 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2HAA1-48.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

10 %

-20 Cel

48 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2HAA1-25.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; BULK

80 ohm

10 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

NKS2HAA1-24.5760-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

10 %

-20 Cel

24.576 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NES5HAA1-50.0000-08(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; MIL-STD-883

40 ohm

10 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

FH1600057

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT; TR, 7 INCH

100 ohm

10 %

-20 Cel

16 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FL3200022

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT-CUT; TR, 7 INCH

40 ohm

10 %

-20 Cel

GOLD OVER NICKEL

e4

32 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

NES5HAA1-50.0000-16(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; MIL-STD-883

40 ohm

10 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NES5HAA1-08.0000-16(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; MIL-STD-883

40 ohm

10 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

FL374WFBR1

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

1 PPM/FIRST YEAR

12 pF

AT CUT; TR, 7 INCH

60 ohm

10 %

-20 Cel

GOLD OVER NICKEL

e4

37.4 MHz

10 uW

L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)

85 Cel

FL4800063Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT-CUT; TR, 7 INCH

40 ohm

15 %

-20 Cel

GOLD OVER NICKEL

e4

48 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

NKS2HAA1-54.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

10 %

-20 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NES5HAA1-08.0000-08(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; MIL-STD-883

40 ohm

10 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

XR20P1H029.9999A2F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

120 ohm

50 %

-40 Cel

29.999 MHz

10 uW

2mm x 1.6mm x 0.45mm

105 Cel

XR32H1E031.999960F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

60 ohm

30 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR20T1K066.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

60 ohm

100 %

-40 Cel

66 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR20P1J029.9999A2F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

120 ohm

70 %

-40 Cel

29.999 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32T1H012.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

100 ohm

50 %

-40 Cel

12 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR32H1J031.999940F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

60 ohm

70 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32T1K012.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

100 ohm

100 %

-40 Cel

12 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32J1I066.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

40 ohm

50 %

-40 Cel

66 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32T1I012.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

100 ohm

50 %

-40 Cel

12 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32P1H020.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

60 ohm

50 %

-40 Cel

20 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR32L1H032.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

40 ohm

50 %

-40 Cel

32 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR32P1H019.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

100 ohm

50 %

-40 Cel

19.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR20J1K029.9999A2F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

120 ohm

100 %

-40 Cel

29.999 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR20T1K030.000080F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

80 ohm

100 %

-40 Cel

30 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32H1I020.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

60 ohm

50 %

-40 Cel

20 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32L1I019.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

100 ohm

50 %

-40 Cel

19.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR20T1E030.000080F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

80 ohm

30 %

-40 Cel

30 MHz

10 uW

2mm x 1.6mm x 0.45mm

85 Cel

XR32L1H020.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

60 ohm

50 %

-40 Cel

20 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR32T1I020.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

60 ohm

50 %

-40 Cel

20 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR20T1I030.000080F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

80 ohm

50 %

-40 Cel

30 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32T1E032.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

40 ohm

30 %

-40 Cel

32 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR32L1E066.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

40 ohm

30 %

-40 Cel

66 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR32P1J066.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

40 ohm

70 %

-40 Cel

66 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32J1H031.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

60 ohm

50 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR32H1E020.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

60 ohm

30 %

-40 Cel

20 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR32J1K020.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

60 ohm

100 %

-40 Cel

20 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR20L1I024.0000A2F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

120 ohm

50 %

-40 Cel

24 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32L1K031.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

60 ohm

100 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR20P1I060.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

60 ohm

50 %

-40 Cel

60 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32J1I032.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

40 ohm

50 %

-40 Cel

32 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance