30 ppm Crystal Oscillators 2,384

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

XR20L5J029.9999A2F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

120 ohm

70 %

-40 Cel

29.999 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32P5H066.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

40 ohm

50 %

-40 Cel

66 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR32T5I031.999960F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

60 ohm

50 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32L5I032.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

40 ohm

50 %

-40 Cel

32 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32H5I012.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

100 ohm

50 %

-40 Cel

12 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32T5I032.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

40 ohm

50 %

-40 Cel

32 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32P5H019.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

100 ohm

50 %

-40 Cel

19.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR32P5I032.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

40 ohm

50 %

-40 Cel

32 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32L5E031.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

60 ohm

30 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR32J5K032.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

40 ohm

100 %

-40 Cel

32 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32J5I019.999960F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

100 ohm

50 %

-40 Cel

19.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32P5K031.999960F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

60 ohm

100 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32H5E012.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

100 ohm

30 %

-40 Cel

12 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR32J5H031.999940F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

60 ohm

50 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR20P5I030.000080F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

80 ohm

50 %

-40 Cel

30 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32T5I032.000060F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

40 ohm

50 %

-40 Cel

32 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32L5I031.999940F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

60 ohm

50 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR20H5E030.000080F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

80 ohm

30 %

-40 Cel

30 MHz

10 uW

2mm x 1.6mm x 0.45mm

85 Cel

XR20P5K059.999980F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT

80 ohm

100 %

-40 Cel

59.999 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32T5H031.999960F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

60 ohm

50 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

105 Cel

XR32H5I012.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

100 ohm

50 %

-40 Cel

12 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32J5I020.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

60 ohm

50 %

-40 Cel

20 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32L5I012.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

100 ohm

50 %

-40 Cel

12 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32J5K019.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

100 ohm

100 %

-40 Cel

19.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32H5E019.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

100 ohm

30 %

-40 Cel

19.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR32T5I012.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

100 ohm

50 %

-40 Cel

12 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32H5K031.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT

60 ohm

100 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32L5I066.000040F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

40 ohm

50 %

-40 Cel

66 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR32J5E031.999940F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

60 ohm

30 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR20J5J029.9999A2F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

120 ohm

70 %

-40 Cel

29.999 MHz

10 uW

2mm x 1.6mm x 0.45mm

125 Cel

XR32T5E066.0000A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

40 ohm

30 %

-40 Cel

66 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

NKS2NEK1-48.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

50 %

-40 Cel

48 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NED1-52.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

30 %

-40 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NAD1-25.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

30 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

GB1920007

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

19.2 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB0800001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

8 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

NKS2NEK1-52.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

50 %

-40 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NAD1-32.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

30 %

-20 Cel

32 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NES7NAK1-FREQ-8(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

6 MHz

56 MHz

8 pF

TAPE AND REEL; AT-CUT CRYSTAL

110 ohm

50 %

-20 Cel

Gold (Au)

e4

500 uW

L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)

NES7

70 Cel

NKS2NAD1-33.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

30 %

-20 Cel

33 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NEK1-40.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

50 %

-40 Cel

40 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NAK1-30.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

50 %

-20 Cel

30 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NED1-66.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

30 %

-40 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

85 Cel

NKS2NED1-66.0000-32(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; TR

60 ohm

30 %

-40 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

85 Cel

NES5NED1-08.0000-32

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; MIL-STD-883

40 ohm

30 %

-40 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

85 Cel

NKS2NAD1-54.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

30 %

-20 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GB0360014

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

3.6 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

NKS2NEK1-66.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

50 %

-40 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

85 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance