30 ppm Crystal Oscillators 2,384

Reset All

Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Minimum Operating Frequency	Maximum Operating Frequency	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Manufacturer Series	Maximum Operating Temperature
NKS2NEK1-12.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; BULK	150 ohm	50 %	-40 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
NKS2NEK1-33.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NED1-24.5760-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	30 %	-40 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
49SNC07.3728-20GGC-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm				20 pF	AT-CUT; TR	80 ohm	30 %	-20 Cel			7.3728 MHz	500 uW	L13.3XB5.5XH5.2 (mm)/L0.524XB0.217XH0.205 (inch)		70 Cel
NKS2NED1-48.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NES5NAK1-50.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NES5NAK1-08.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
GB2700026	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						27 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NED1-32.7680-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NES5NAK1-50.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NES5NEK1-08.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
GA1000003	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						10 MHz	100 uW	L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)
GB6400014	Diodes Incorporated	PARALLEL - 3RD OVERTONE	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						64 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB2500095	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						25 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NAD1-26.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-20 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NEK1-25.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; TR	80 ohm	50 %	-40 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
NES5NED1-50.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-40 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NKS2NED1-26.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	30 %	-40 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
GB1350019	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						13.5 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB0400003	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						4 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES5NAD1-50.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
GB0800013	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						8 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES5NEK1-08.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NKS2NEK1-24.5760-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NES5NED1-08.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NES5NEK1-50.0000-16(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NES7NAK-FREQ-32(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE	SURFACE MOUNT	30 ppm	30 MHz	56 MHz		32 pF	TAPE AND REEL; AT-CUT CRYSTAL	80 ohm	50 %	-20 Cel	Gold (Au)	e4		500 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)	NES7	70 Cel
NKS2NAD1-25.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; BULK	80 ohm	30 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
XR32P5J020.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT	60 ohm	70 %	-40 Cel			20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32L5H012.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	12 pF	AT CUT	100 ohm	50 %	-40 Cel			12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		105 Cel
XR32J5I031.999960F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	10 pF	AT CUT	60 ohm	50 %	-40 Cel			31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32T5K012.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT	100 ohm	100 %	-40 Cel			12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR20J5I066.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	10 pF	AT CUT	60 ohm	50 %	-40 Cel			66 MHz	10 uW	2mm x 1.6mm x 0.45mm		125 Cel
XR32J5K020.000040F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	10 pF	AT CUT	60 ohm	100 %	-40 Cel			20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32H5K019.999940F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT	100 ohm	100 %	-40 Cel			19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR20J5K060.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	10 pF	AT CUT	60 ohm	100 %	-40 Cel			60 MHz	10 uW	2mm x 1.6mm x 0.45mm		125 Cel
XR32J5K032.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	10 pF	AT CUT	40 ohm	100 %	-40 Cel			32 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32H5K066.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT	40 ohm	100 %	-40 Cel			66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32P5J066.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT	40 ohm	70 %	-40 Cel			66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32L5I012.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	12 pF	AT CUT	100 ohm	50 %	-40 Cel			12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32H5J066.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT	40 ohm	70 %	-40 Cel			66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR20T5I066.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT	60 ohm	50 %	-40 Cel			66 MHz	10 uW	2mm x 1.6mm x 0.45mm		125 Cel
XR20J5I029.9999A2F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	10 pF	AT CUT	120 ohm	50 %	-40 Cel			29.999 MHz	10 uW	2mm x 1.6mm x 0.45mm		125 Cel
XR32T5K032.000040F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT	40 ohm	100 %	-40 Cel			32 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32T5K031.999940F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT	60 ohm	100 %	-40 Cel			31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR32H5J031.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	70 %	-40 Cel			31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel
XR20H5J060.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	70 %	-40 Cel			60 MHz	10 uW	2mm x 1.6mm x 0.45mm		125 Cel
XR32T5E020.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT	60 ohm	30 %	-40 Cel			20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		85 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance