Diodes Incorporated Crystal Oscillators 2,400+

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

GB1430018

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

14.3 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

FP1100003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

11 MHz

10 uW

L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)

49SMLB03.686432HJE(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FY2400002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

24 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FH1600021

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

150 ohm

16 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

FL1200136

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

12 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL2400170

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

24 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

GB1100021

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/FIRST YEAR

30 pF

AT CUT; BAG

30 ohm

30 %

-20 Cel

11.0592 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

70 Cel

NKS2NAD1-32.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

30 %

-20 Cel

32 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NEK1-12.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; TR

150 ohm

50 %

-40 Cel

12 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

85 Cel

FL2000033

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

20 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2NEK1-24.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

50 %

-40 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

49SMLB05.1234B8-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FH2700013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

27 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

FL4830003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

48.3 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

GA0600005

Diodes Incorporated

PARALLEL - 3RD OVERTONE

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

60 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

FH2500035

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

NKS2NAK1-66.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

50 %

-20 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

GB2500012

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

FW400WFQA1

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

7 pF

AT CUT; TR, 7 INCH

40 ohm

10 %

-30 Cel

40 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

85 Cel

FL5000039

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

50 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2NAD1-38.4000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

30 %

-20 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NED1-37.5000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

30 %

-40 Cel

37.5 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

NKS2NAD1-66.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; BULK

60 ohm

30 %

-20 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

GC1200008

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GB2500123

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

49SMLB54.0000GGC-E(T)

Diodes Incorporated

SERIES - 3RD OVERTONE

49SMLB05.1234GHE-E

Diodes Incorporated

SERIES - FUNDAMENTAL

NES7NAD-FREQ-(T)

Diodes Incorporated

SERIES - 3RD OVERTONE

SURFACE MOUNT

30 ppm

30 MHz

56 MHz

TAPE AND REEL; AT-CUT CRYSTAL

80 ohm

30 %

-20 Cel

Gold (Au)

e4

500 uW

L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)

NES7

70 Cel

49SMLB03.200032GGC-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB54.00008GGC-E(T)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB54.0000HJE-E

Diodes Incorporated

SERIES - 3RD OVERTONE

NKS2NAK1-25.0000-16(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; TR

80 ohm

50 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FL2860016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

28.6 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2HAA1-24.5760-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

10 %

-20 Cel

24.576 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FH2710003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

27.1 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

49SMLB18.4320-20GHC-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT-CUT; TR

40 ohm

50 %

-20 Cel

18.432 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

70 Cel

FP3000013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

20 pF

AT-CUT; TAPE AND REEL

40 ohm

20 %

-40 Cel

30 MHz

10 uW

L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)

85 Cel

NKS2JAB1-32.7680-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

32.768 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-54.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB05.1234B16-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FL3880003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

38.8 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2NED1-40.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

30 %

-40 Cel

40 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

49SMLB05.1234B18-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

NKS2NAK1-25.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; BULK

80 ohm

50 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FL2000117

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

20 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2NAD1-24.5760-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

30 %

-20 Cel

24.576 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FY4000012

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance