Diodes Incorporated Crystal Oscillators 2,400+

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

49S04.9152GHE-E

Diodes Incorporated

SERIES - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

20 ohm

50 %

-40 Cel

4.9152 MHz

100 uW

85 Cel

49S16.0000GHE-E

Diodes Incorporated

SERIES - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

20 ohm

50 %

-40 Cel

16 MHz

100 uW

85 Cel

NKS2JAB1-54.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FY1220016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12.2 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

GF1430012

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

14.3 MHz

100 uW

L11.7XB4.8XH3.0 (mm)/L0.461XB0.189XH0.118 (inch)

49SMLB05.1234GHE(Q)

Diodes Incorporated

SERIES - FUNDAMENTAL

49SMLB03.686418GGC-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FL2430009

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

24.3 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

GB1430027

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

14.3 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

49SMLB54.00008GHE-E

Diodes Incorporated

PARALLEL - 3RD OVERTONE

FL2700087

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

27 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2JAB1-20.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

20 %

-20 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FH2500043

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

GC2000039

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

20 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

49SMLB54.000016GHE(Q)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB30.000032GHE-E

Diodes Incorporated

PARALLEL - 3RD OVERTONE

GB2500019

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

NKS2JAB1-30.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

30 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB54.0000B32(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB54.0000B18

Diodes Incorporated

PARALLEL - FUNDAMENTAL

NES5NEK1-50.0000-32

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; MIL-STD-883

40 ohm

50 %

-40 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

85 Cel

49SMLB05.1234GGC-E

Diodes Incorporated

SERIES - FUNDAMENTAL

49SMLB40.000032GGC-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB111-20-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

20 pF

AT CUT; BULK

60 ohm

50 %

-20 Cel

11.0592 MHz

100 uW

L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

FL2820004Q

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; AEC-Q200; TR

60 ohm

GOLD OVER NICKEL

e4

28 MHz

10 uW

L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)

GC2700001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FX2500063

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

NKS2HAA1-25.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; BULK

80 ohm

10 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FL5000066

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT

40 ohm

GOLD OVER NICKEL

e4

50 MHz

10 uW

3.2mm X 2.5mm X 0.68mm

FP0730013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

7.3 MHz

10 uW

L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)

49SMLB40.0000B18-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FY2400041

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

24 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FY2500015

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FL3200063

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

32 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

F81430073

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

14.3 MHz

10 uW

L8.0XB4.5XH1.4 (mm)/L0.315XB0.177XH0.055 (inch)

NKS2NAK1-20.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

50 %

-20 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB30.00008HJE-E(T)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB03.6864B32-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB30.00008GHE(T)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

GC0800053

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GB2500025

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

NKS2NEK1-30.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

50 %

-40 Cel

30 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

49SMLB40.000016GGC(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FH3200015

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

32 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

GB0400005

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; BAG; BOX

120 ohm

30 %

-20 Cel

4 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

70 Cel

FY3600005

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

36 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

GC2120001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

21.2 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2JAB1-54.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance