Diodes Incorporated Crystal Oscillators 2,400+

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

G93270002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TR, 7 INCH

90000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L2.0XB1.2XH0.6 (mm)/L0.079XB0.047XH0.024 (inch)

85 Cel

49SMLB03.6864HJE(T)

Diodes Incorporated

SERIES - FUNDAMENTAL

FY1100010

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

11 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

GB0400004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

4 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

NKS2JAB1-26.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

26 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB30.000016HJE

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB54.000032HJE

Diodes Incorporated

PARALLEL - 3RD OVERTONE

US3840004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

100 ohm

38.4 MHz

10 uW

L1.65XB1.25XH0.3 (mm)/L0.065XB0.049XH0.012 (inch)

GB2000040

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

20 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

NKS2HAA1-38.4000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GB5000016

Diodes Incorporated

PARALLEL - 3RD OVERTONE

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

50 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

NKS2HAA1-37.5000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

37.5 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2HAA1-52.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

10 %

-20 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NEK1-27.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

50 %

-40 Cel

27 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

49SMLB30.0000B8-E

Diodes Incorporated

PARALLEL - 3RD OVERTONE

FL2000034

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

20 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB05.12348GHE-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB05.12348GGC-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

F95400008

Diodes Incorporated

PARALLEL - 3RD OVERTONE

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

54 MHz

10 uW

L5.0XB3.2XH1.2 (mm)/L0.197XB0.126XH0.047 (inch)

GC0800047

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FL1000002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

25 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT; TR, 7 INCH

200 ohm

25 %

-40 Cel

GOLD OVER NICKEL

e4

10 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

85 Cel

FL1920029

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

19.2 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

GB0610005

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

6.1 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

49SMLB54.00008GHE-E(Q)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB03.2000GGC-E(Q)

Diodes Incorporated

SERIES - FUNDAMENTAL

49SMLB03.200018GGC(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB40.00008GGC

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FW2500003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

120 ohm

25 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

49SMLB03.686432GGC(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FL2700100

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

27 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2HAA1-40.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

10 %

-20 Cel

40 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2HAA1-48.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

10 %

-20 Cel

48 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC0350001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

3.5 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GC2450017

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

24.5 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GC2700042

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NKS2NAD1-24.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

80 ohm

30 %

-20 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2NAK1-24.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

50 %

-20 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB30.00008HJE-E(Q)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

49SMLB54.0000B16(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

GB0600021

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

6 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

49SMLB30.00008HJE(Q)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

FY2400045

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

24 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FL5000036

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

50 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL2600006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

26 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

GB2400030

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

24 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

FX2000045

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

20 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

FX2500012

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

49SMLB54.0000B8

Diodes Incorporated

PARALLEL - FUNDAMENTAL

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance