Diodes Incorporated Crystal Oscillators 2,400+

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Minimum Operating Frequency	Maximum Operating Frequency	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Manufacturer Series	Maximum Operating Temperature
49SMLB03.6864B8-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
GC3530005	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				5 PPM/FIRST YEAR		AT-CUT; TR						35.3 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
NKS2NAD1-27.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	30 %	-20 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2JAB1-12.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; TR	150 ohm	20 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
FF2450006	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR						24.5 MHz	10 uW	L4.0XB2.5XH0.65 (mm)/L0.157XB0.098XH0.026 (inch)
FP3200008	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR						32 MHz	10 uW	L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)
49SMLB54.00008HJE-E(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE
49SMLB40.000016GHE	Diodes Incorporated	PARALLEL - FUNDAMENTAL
49SMLB30.000032HJE(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE
49SMLB40.0000HJE-E	Diodes Incorporated	SERIES - FUNDAMENTAL
GC2000026	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				5 PPM/FIRST YEAR		AT-CUT; TR						20 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)
FL2400127	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR	60 ohm			GOLD OVER NICKEL	e4	24 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
G33270010	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm			3 PPM/FIRST YEAR	6 pF	X CUT; TR, 13 INCH	50000 ohm	43 %	-10 Cel			.032768 MHz	1 uW			60 Cel
F92400001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR						24 MHz	10 uW	L5.0XB3.2XH1.2 (mm)/L0.197XB0.126XH0.047 (inch)
FW1600001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				5 PPM/FIRST YEAR		AT-CUT; TR							10 uW	L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)
FL1200018	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR	80 ohm			GOLD OVER NICKEL	e4	12 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
49SMLB03.2000B8	Diodes Incorporated	PARALLEL - FUNDAMENTAL
49SMLB03.6864B18(Q)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
NKS2HAA1-32.7680-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
FX2710008	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR						27.1 MHz	10 uW	L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)
NKS2HAA1-66.0000-16(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
49SMLB54.000032GHE-E	Diodes Incorporated	PARALLEL - 3RD OVERTONE
49SMLB05.12348GHE(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
NKS2NED1-12.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; TR	150 ohm	30 %	-40 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
GB1100004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						11 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB1200027	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						12 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2HAA1-32.7680-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	10 %	-20 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NAD1-40.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
FL3300008	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR	40 ohm			GOLD OVER NICKEL	e4	33 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
FL2700074	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR	60 ohm			GOLD OVER NICKEL	e4	27 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)
NKS2NAK1-37.5000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
49SMLB30.000032HJE-E(Q)	Diodes Incorporated	PARALLEL - 3RD OVERTONE
49SMLB03.6864GGC(Q)	Diodes Incorporated	SERIES - FUNDAMENTAL
49SMLB54.0000B8(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
NKS2NEK1-25.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
NKS2NEK1-66.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
NES7NEK-FREQ-8(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE	SURFACE MOUNT	30 ppm	30 MHz	56 MHz		8 pF	TAPE AND REEL; AT-CUT CRYSTAL	80 ohm	50 %	-40 Cel	Gold (Au)	e4		500 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)	NES7	85 Cel
GA1200006	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						12 MHz	100 uW	L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)
49SMLB05.123432GGC(Q)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
49SMLB03.686432HJE	Diodes Incorporated	PARALLEL - FUNDAMENTAL
NKS2NEK1-48.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
49SMLB03.200016HJE	Diodes Incorporated	PARALLEL - FUNDAMENTAL
GA4800003	Diodes Incorporated	PARALLEL - 3RD OVERTONE	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						48 MHz	100 uW	L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)
NKS2NAD1-38.4000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2JAB1-33.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	20 %	-20 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
49SMLB03.200016GHE-E(Q)	Diodes Incorporated	PARALLEL - FUNDAMENTAL
49SMLB54.000016GGC	Diodes Incorporated	PARALLEL - 3RD OVERTONE
FH1200022W	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT				3 PPM/FIRST YEAR		AT-CUT; TR							10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance