Diodes Incorporated Crystal Oscillators 2,400+

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

GC0400038

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

4 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FL1430013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

14.3 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB05.123432GGC-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

GA1100004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

11 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

FW2400007

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

120 ohm

24 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

FW2600003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

120 ohm

26 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

49SMLB03.20008HJE

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB30.0000B32

Diodes Incorporated

PARALLEL - 3RD OVERTONE

FW2710005

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

100 ohm

27.1 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

NKS2NAK1-54.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

50 %

-20 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

GC1200050

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

16 pF

AT CUT; TR

60 ohm

50 %

-10 Cel

12 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

60 Cel

NES5JAB1-08.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

FH1200004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

15 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT; TR, 7 INCH

150 ohm

15 %

-30 Cel

12 MHz

100 uW

L2.5XB2.0XH0.5 (mm)/L0.098XB0.079XH0.02 (inch)

70 Cel

FW3000010

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

100 ohm

30 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

GC0800016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NES5JAB1-08.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NKS2HAA1-32.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

60 ohm

10 %

-20 Cel

32 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB30.000032GGC(T)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

NKS2NAD1-12.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; TR

150 ohm

30 %

-20 Cel

12 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FY1100009

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

11 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FL2700026

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

27 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL4800049

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

48 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NES5NED1-08.0000-08(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; MIL-STD-883

40 ohm

30 %

-40 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

85 Cel

FW4800008

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

48 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

49SMLB40.000032GHE(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FP0980008

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

9.8 MHz

10 uW

L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)

49SMLB40.000016GHE-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FY0800044

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FY1430046

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

14.3 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

GC0400042

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

4 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

49SMLB03.6864GGC-E(T)

Diodes Incorporated

SERIES - FUNDAMENTAL

FY1200125

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FY4800035

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

48 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FL1600089

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

16 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NKS2NAK1-24.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

50 %

-20 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

49SMLB05.123418GHE

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB03.20008HJE(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

GC0800020

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FP0800018

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

3 PPM/FIRST YEAR

18 pF

AT-CUT; TR, 7 INCH

80 ohm

50 %

-20 Cel

8 MHz

10 uW

L7.0XB5.0XH1.1 (mm)/L0.276XB0.197XH0.043 (inch)

70 Cel

49SMLB30.0000B-E

Diodes Incorporated

SERIES - 3RD OVERTONE

49SMLB03.6864B16-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB05.12348GHE-E(Q)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

NES7NED1-FREQ-(T)

Diodes Incorporated

SERIES - FUNDAMENTAL

SURFACE MOUNT

30 ppm

6 MHz

56 MHz

TAPE AND REEL; AT-CUT CRYSTAL

110 ohm

30 %

-40 Cel

Gold (Au)

e4

500 uW

L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)

NES7

85 Cel

NKS2NAD1-37.5000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

30 %

-20 Cel

37.5 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

FX2400019

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

24 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

FW2500023Q

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; AEC-Q200; TR

90 ohm

25 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

F92500016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L5.0XB3.2XH1.2 (mm)/L0.197XB0.126XH0.047 (inch)

FY3530003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

35.3 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance