Diodes Incorporated Crystal Oscillators 2,400+

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

FH3000017

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

30 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

FY1200059

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

GC2700052

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FL3740019Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

37.4 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB03.686432GHE

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FL3200081

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

32 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB07.3728-20GHE-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT-CUT

50 %

-40 Cel

7.3728 MHz

100 uW

85 Cel

FL2000089

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

20 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

GB2000033

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

20 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB4800023

Diodes Incorporated

PARALLEL - 3RD OVERTONE

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

48 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

49SMLB30.0000B8

Diodes Incorporated

PARALLEL - 3RD OVERTONE

FH1200001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR, 7 INCH

150 ohm

30 %

-20 Cel

12 MHz

10 uW

L2.5XB2.0XH0.5 (mm)/L0.098XB0.079XH0.02 (inch)

70 Cel

NES5NAK1-50.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; MIL-STD-883

40 ohm

50 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

GB0600013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

6 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

FL2400058

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

24 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL2450053Q

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; AEC-Q200; TR

60 ohm

GOLD OVER NICKEL

e4

24 MHz

10 uW

L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)

NKS2JAB1-30.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

30 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

F82500071

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L8.0XB4.5XH1.4 (mm)/L0.315XB0.177XH0.055 (inch)

49SNC200-18-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

18 pF

AT-CUT CRYSTAL; BULK

30 ohm

50 %

-20 Cel

Matte Tin (Sn)

e3

20 MHz

100 uW

L13.3XB5.5XH5.2 (mm)/L0.524XB0.217XH0.205 (inch)

70 Cel

GC0400026

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

4 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FL1840001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

18.4 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL1920028

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

19.2 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB05.123418HJE-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

49SMLB05.12348GGC(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

FL2400082

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

24 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NES5JAB1-08.0000-32(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NES5JAB1-08.0000-08(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

FW2500021

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

120 ohm

25 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

NKS2NAK1-33.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

50 %

-20 Cel

33 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NES5NED1-08.0000-08

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; MIL-STD-883

40 ohm

30 %

-40 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

85 Cel

NES5NED1-50.0000-32

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; MIL-STD-883

40 ohm

30 %

-40 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

85 Cel

NKS2NEK1-40.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

50 %

-40 Cel

40 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

85 Cel

49SMLB54.000016GGC(Q)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

FL2860012

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

28.6 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

49SMLB54.000016GGC(T)

Diodes Incorporated

PARALLEL - 3RD OVERTONE

FH2000058

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

20 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

GC0800044

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FL1220025M

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

12.2 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL2600191

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

60 ohm

GOLD OVER NICKEL

e4

26 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FY2500068

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT-CUT; TR, 7 INCH

50 ohm

100000 %

-10 Cel

25 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

70 Cel

FY2700045

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

GC4800022

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

48 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

NES5JAB1-08.0000-08

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

FY2700035

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

49SMLB25.0000-16GGC-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

16 pF

AT-CUT; TR

30 %

-20 Cel

25 MHz

100 uW

70 Cel

FL1600102

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

80 ohm

GOLD OVER NICKEL

e4

16 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FP2400015

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

20 pF

TR

30 ohm

20 %

-20 Cel

24 MHz

10 uW

L7.0XB5.0XH1.15 (mm)/L0.276XB0.197XH0.045 (inch)

70 Cel

G83270023

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

7 pF

TR, 7 INCH

70000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)

85 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance