Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Littelfuse |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
60 A |
1.78 V |
.035 us |
AVALANCHE |
1 uA |
1 |
SMALL OUTLINE |
300 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
R-PSSO-G2 |
CATHODE |
335 W |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE |
1 |
TO-263AB |
550 A |
SILICON |
IEC-60747 |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
1.1 V |
.05 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
150 Cel |
Tin (Sn) |
R-PDSO-G3 |
1 |
Not Qualified |
.35 W |
1 |
2 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.65 V |
SCHOTTKY |
75 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
45 V |
175 Cel |
EFFICIENCY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-F2 |
1 |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.24 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
9 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.44 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
POWER |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
75 A |
e3 |
225 |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
60 A |
1.95 V |
.125 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
TIN |
R-PSFM-T2 |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY |
1 |
DO-247 |
400 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.1 V |
.05 us |
.15 uA |
1 |
250 V |
SMALL OUTLINE |
300 V |
HIGH VOLTAGE FAST RECOVERY |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.325 W |
LOW LEAKAGE CURRENT |
1 |
300 V |
4.5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
.07 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
70 V |
125 Cel |
-55 Cel |
TIN |
R-PDSO-G4 |
1 |
.25 W |
e3 |
40 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.8 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
5 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.005 us |
1 |
LONG FORM |
75 V |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
1 |
DO-213AA |
e0 |
SILICON |
MIL-19500/116L |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
1.1 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
800 V |
150 Cel |
HIGH VOLTAGE HIGH POWER |
-55 Cel |
MATTE TIN OVER NICKEL |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
1 |
TO-252AA |
120 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
1.1 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
800 V |
150 Cel |
HIGH VOLTAGE HIGH POWER |
-55 Cel |
MATTE TIN OVER NICKEL |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
1 |
TO-252AA |
200 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
7.5 A |
.84 V |
SCHOTTKY |
500 uA |
2 |
FLANGE MOUNT |
Rectifier Diodes |
45 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
CATHODE |
LOW POWER LOSS |
1 |
TO-220AB |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.65 V |
SCHOTTKY |
12 uA |
1 |
SMALL OUTLINE |
60 V |
175 Cel |
EFFICIENCY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-F2 |
1 |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.6 V |
SCHOTTKY |
.5 uA |
1 |
25 V |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
EFFICIENCY |
-65 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
1 A |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.15 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
SCHOTTKY |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.15 W |
1 |
.75 A |
e3 |
30 |
235 |
SILICON |
|||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
1.45 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1600 V |
180 Cel |
GENERAL PURPOSE |
MATTE TIN |
R-PSSO-G2 |
CATHODE |
Not Qualified |
1 |
TO-263AB |
300 A |
e3 |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.004 us |
1 |
LONG FORM |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
HIGH SPEED SWITCH |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.175 A |
1.25 V |
.004 us |
100 uA |
2 |
80 V |
SMALL OUTLINE |
100 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
R-PDSO-G3 |
.2 W |
LOW LEAKAGE CURRENT |
1 |
4 A |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.7 V |
SCHOTTKY |
500 uA |
1 |
50 V |
SMALL OUTLINE |
50 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
.85 W |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-214AC |
80 A |
e3 |
260 |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.58 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
CATHODE |
Not Qualified |
HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
40 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
48 A |
1.18 V |
AVALANCHE |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1600 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN SILVER COPPER |
R-PSFM-T2 |
ISOLATED |
Not Qualified |
1 |
420 A |
e1 |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
1 V |
.008 us |
.025 uA |
1 |
20 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
FAST RECOVERY |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
100 V |
2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.55 V |
SCHOTTKY |
200 uA |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE , LOW POWER LOSS |
1 |
DO-219AD |
25 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
.35 V |
.005 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.2 W |
1 |
1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
ROUND |
METAL |
SINGLE |
.15 A |
1 V |
.004 us |
5 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
200 Cel |
-65 Cel |
Tin (Sn) |
O-MELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
2 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.35 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
FAST SOFT RECOVERY |
-65 Cel |
MATTE TIN |
R-PDSO-F3 |
1 |
CATHODE |
Not Qualified |
1 |
280 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Good-ark Electronics |
RECTIFIER DIODE |
DUAL |
GULL WING |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.15 A |
1.25 V |
.006 us |
1 uA |
4 |
75 V |
SMALL OUTLINE |
85 V |
150 Cel |
GENERAL PURPOSE |
R-PDSO-G6 |
.2 W |
1 |
75 V |
2.5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
45 V |
TIN LEAD |
O-XELF-R2 |
1 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
SILICON |
MIL-19500/586F |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.7 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-214AA |
430 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.2 V |
.005 us |
.5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
SWITCHING |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
METALLURGICALLY BONDED |
1 |
DO-213AA |
100 V |
2 A |
e0 |
20 |
235 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
MIL-19500/444 |
||||||||||||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 V |
.05 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
250 V |
150 Cel |
-55 Cel |
R-PDSO-G2 |
.2 W |
1 |
.625 A |
SILICON |
||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.95 V |
SCHOTTKY |
100 uA |
2 |
FLANGE MOUNT |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
CATHODE |
LOW POWER LOSS |
1 |
TO-220AB |
150 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.3 V |
.15 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
125 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.67 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
150 V |
175 Cel |
POWER |
R-PDSO-F2 |
Not Qualified |
1 |
75 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.8 V |
.03 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
75 A |
e3 |
30 |
260 |
SILICON |
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Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD OVER NICKEL |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
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Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
1.1 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
800 V |
150 Cel |
GENERAL PURPOSE |
TIN LEAD |
R-PSSO-G2 |
CATHODE |
Not Qualified |
1 |
TO-252AA |
200 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.005 us |
1 |
LONG FORM |
75 V |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
DO-35 |
e0 |
SILICON |
MIL-19500/116L |
||||||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
.63 V |
SCHOTTKY |
1 |
FLANGE MOUNT |
Rectifier Diodes |
45 V |
150 Cel |
GENERAL PURPOSE |
TIN LEAD |
R-PSFM-T2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
TO-220AC |
150 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.62 V |
SCHOTTKY |
500 uA |
1 |
100 V |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
175 Cel |
-55 Cel |
TIN LEAD |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
50 A |
e0 |
SILICON |
||||||||||||||||||||||||||
Microsemi |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.75 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PDSO-C2 |
Not Qualified |
1 |
DO-214AC |
100 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.55 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
EXTREME FAST SWITCHING, FREE WHEELING DIODE |
1 |
5.5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
YES |
SINGLE |
2 A |
.28 V |
SCHOTTKY |
1 |
Rectifier Diodes |
30 V |
150 Cel |
TIN |
1 |
1 |
50 A |
e3 |
30 |
260 |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.