Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Telefunken Microelectronics |
RECTIFIER DIODE |
NO |
SINGLE |
.2 A |
1 V |
1 |
Rectifier Diodes |
75 V |
175 Cel |
Tin/Lead (Sn/Pb) |
1 |
4 A |
e0 |
|||||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1 V |
.004 us |
5 uA |
1 |
75 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
FAST RECOVERY |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH RELIABILITY |
1 |
DO-204AH |
100 V |
4 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 V |
SCHOTTKY |
.5 uA |
1 |
30 V |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-214AC |
30 A |
e3 |
30 |
260 |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.12 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
150 Cel |
TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.25 W |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1.25 V |
.05 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
120 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-G3 |
1 |
Not Qualified |
.225 W |
1 |
TO-236AB |
2.5 A |
e3 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1.25 V |
.05 us |
.1 uA |
1 |
200 V |
SMALL OUTLINE |
250 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.25 W |
1 |
9 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.715 V |
.004 us |
.5 uA |
4 |
80 V |
SMALL OUTLINE |
Signal Diodes |
100 V |
150 Cel |
-65 Cel |
Tin (Sn) |
R-PDSO-G6 |
1 |
Not Qualified |
.25 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.62 V |
SCHOTTKY |
100 uA |
1 |
60 V |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
CATHODE |
Not Qualified |
LOW POWER LOSS |
1 |
60 V |
50 A |
e3 |
30 |
260 |
SILICON |
MIL-STD-202 |
|||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
YES |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
Rectifier Diodes |
100 V |
175 Cel |
Tin/Silver (Sn97.5Ag2.5) |
1 |
1 |
2 A |
e2 |
||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
3 |
NO |
RECTANGULAR |
UNSPECIFIED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
120 A |
1.43 V |
2 |
FLANGE MOUNT |
Rectifier Diodes |
1600 V |
150 Cel |
GENERAL PURPOSE |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
1 |
TO-240AA |
2800 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.3 A |
1.25 V |
.004 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
75 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.35 W |
2 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.28 V |
.075 us |
10 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
SMALL OUTLINE |
600 V |
175 Cel |
R-PDSO-F2 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.62 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-214AC |
50 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.36 V |
SCHOTTKY |
1000 uA |
1 |
30 V |
SMALL OUTLINE |
30 V |
125 Cel |
GENERAL PURPOSE |
-40 Cel |
R-PDSO-F2 |
1 |
30 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
YES |
SINGLE |
1.5 A |
.36 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
Tin (Sn) |
1 |
30 A |
e3 |
||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.15 V |
2.5 us |
10 uA |
1 |
400 V |
SMALL OUTLINE |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-214AB |
100 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
12 A |
.46 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F3 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-277A |
280 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15 A |
.85 V |
.035 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
MATTE TIN OVER NICKEL |
R-PSFM-T2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
TO-220AC |
200 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
SINGLE |
.075 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Bourns |
RECTIFIER DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
.004 us |
1 |
SMALL OUTLINE |
100 V |
125 Cel |
-55 Cel |
GOLD |
R-PDSO-R2 |
Not Qualified |
.4 W |
1 |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.42 V |
SCHOTTKY |
1000 uA |
1 |
SMALL OUTLINE |
30 V |
125 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
.84 W |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
30 A |
e3 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1.15 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.35 W |
1 |
2 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.3 A |
1.25 V |
.004 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.35 W |
2 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
.025 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH SPEED SWITCH |
1 |
2 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.3 A |
1.07 V |
.025 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
200 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.8 A |
.45 V |
SCHOTTKY |
50 uA |
1 |
30 V |
SMALL OUTLINE |
30 V |
125 Cel |
GENERAL PURPOSE |
R-PDSO-G2 |
1 |
5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.0056 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-F2 |
1 |
CATHODE |
LOW POWER LOSS |
1 |
25 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.76 V |
.0045 us |
SCHOTTKY |
.3 uA |
1 |
SMALL OUTLINE |
60 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-F2 |
1 |
.68 W |
1 |
50 A |
20 |
235 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
SCHOTTKY |
500 uA |
1 |
SMALL OUTLINE |
40 V |
125 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
LOW POWER LOSS |
1 |
30 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
Fairchild Semiconductor |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
8 A |
2.6 V |
.065 us |
AVALANCHE |
2 |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
HYPERFAST SOFT RECOVERY |
TIN LEAD |
R-PSFM-T3 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
TO-220AB |
100 A |
e0 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
5 A |
.52 V |
SCHOTTKY |
850 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F3 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-277A |
200 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.715 V |
.006 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
.225 W |
TO-236AB |
4 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.75 V |
SCHOTTKY |
50 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
175 Cel |
POWER |
R-PDSO-F2 |
1 |
60 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
100 A |
1.01 V |
SCHOTTKY |
200 uA |
2 |
170 V |
FLANGE MOUNT |
Other Diodes |
170 V |
175 Cel |
HIGH VOLTAGE POWER |
-40 Cel |
NICKEL |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
700 A |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
Nexperia |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.005 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
R-PDSO-G3 |
.25 W |
1 |
TO-236AB |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.005 us |
SCHOTTKY |
2 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.23 W |
1 |
TO-236AB |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.8 A |
.45 V |
SCHOTTKY |
50 uA |
1 |
30 V |
SMALL OUTLINE |
30 V |
125 Cel |
GENERAL PURPOSE |
R-PDSO-G2 |
1 |
5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.715 V |
.006 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
-55 Cel |
R-PDSO-G3 |
.225 W |
TO-236AB |
.5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.57 V |
SCHOTTKY |
300 uA |
1 |
SMALL OUTLINE |
45 V |
150 Cel |
POWER |
R-PDSO-F2 |
1 |
75 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
.9 V |
3 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
85 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
LOW LEAKAGE CURRENT |
1 |
TO-236AB |
4.5 A |
e3 |
30 |
260 |
SILICON |
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|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.2 W |
1 |
.625 A |
e3 |
30 |
260 |
SILICON |
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|
Infineon Technologies |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.12 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
150 Cel |
R-PDSO-G3 |
.25 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 3 ELEMENTS |
.07 A |
.41 V |
SCHOTTKY |
10 uA |
3 |
70 V |
SMALL OUTLINE |
Other Diodes |
70 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-F6 |
1 |
Not Qualified |
e3 |
30 |
260 |
SILICON |
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|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.15 A |
1.25 V |
.004 us |
50 uA |
2 |
75 V |
SMALL OUTLINE |
Rectifier Diodes |
75 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
.2 W |
HIGH RELIABILITY |
1 |
75 V |
1 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
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Fairchild Semiconductor |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
1.6 V |
.17 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1500 V |
150 Cel |
HIGH VOLTAGE FAST RECOVERY |
TIN LEAD |
R-PSFM-T2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
100 A |
e0 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.