Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.89 V |
SCHOTTKY |
2 uA |
1 |
SMALL OUTLINE |
150 V |
175 Cel |
EFFICIENCY |
-40 Cel |
R-PDSO-C2 |
1 |
80 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.03 us |
1 |
SMALL OUTLINE |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
R-PDSO-C2 |
Not Qualified |
1 |
DO-214AB |
100 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
2 us |
5 uA |
1 |
1000 V |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-214BA |
1000 V |
30 A |
e3 |
30 |
250 |
SILICON |
AEC-Q101 |
|||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
SCHOTTKY |
1 |
FLANGE MOUNT |
GENERAL PURPOSE |
R-PSFM-T2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
TO-220AC |
150 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
.63 V |
SCHOTTKY |
1 |
FLANGE MOUNT |
Rectifier Diodes |
45 V |
175 Cel |
POWER |
-65 Cel |
MATTE TIN |
R-PSFM-T2 |
CATHODE |
Not Qualified |
1 |
TO-220AC |
150 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
.84 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
45 V |
175 Cel |
POWER |
-65 Cel |
MATTE TIN |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
70 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
2 us |
1 uA |
1 |
1000 V |
SMALL OUTLINE |
1000 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.5 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
400 V |
175 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
1 |
DO-214AC |
40 A |
e3 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.25 V |
.025 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
600 V |
175 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
20 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
8 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
45 V |
125 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
140 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.6 V |
.01 us |
SCHOTTKY |
5 uA |
1 |
30 V |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
40 V |
15 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.05 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
110 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 us |
1 |
SMALL OUTLINE |
1000 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
1 |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.7 V |
SCHOTTKY |
500 uA |
1 |
SMALL OUTLINE |
60 V |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
DO-214AC |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.16 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
EFFICIENCY |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.36 W |
1 |
9 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.86 V |
SCHOTTKY |
4 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
175 Cel |
HIGH VOLTAGE POWER |
-40 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
LOW LEAKAGE CURRENT |
1 |
DO-214AC |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.34 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-F2 |
1 |
.57 W |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
Continental Device India |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.8 V |
5 uA |
1 |
1000 V |
LONG FORM |
1000 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-41 |
1000 V |
30 A |
SILICON |
IATF 16949 |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.4 A |
.3 V |
.01 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.25 W |
1 |
3 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
J BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.63 V |
SCHOTTKY |
200 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
150 Cel |
POWER |
-55 Cel |
MATTE TIN |
R-PDSO-J2 |
1 |
FREE WHEELING DIODE |
1 |
40 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.9 V |
.025 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
100 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
5 uA |
1 |
SMALL OUTLINE |
1000 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PDSO-C2 |
1 |
100 A |
SILICON |
|||||||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.15 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
R-PDSO-C2 |
Not Qualified |
1 |
100 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.004 us |
50 uA |
1 |
80 V |
SMALL OUTLINE |
100 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN |
R-PDSO-G2 |
1 |
.4 W |
LOW LEAKAGE CURRENT |
1 |
.5 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.03 A |
.37 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
125 Cel |
R-PDSO-G2 |
.2 W |
HIGH RELIABILITY |
1 |
.2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.25 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
600 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-214AC |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.65 V |
.075 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1200 V |
175 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE |
1 |
18 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
.85 V |
.0059 us |
SCHOTTKY |
120 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN |
R-PDSO-F2 |
1 |
.4 W |
1 |
2.5 A |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.205 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
125 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
45 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
1.2 V |
.075 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST RECOVERY POWER |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-214AA |
35 A |
e3 |
40 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.8 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
400 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE |
1 |
DO-214AC |
40 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
5 A |
.56 V |
SCHOTTKY |
2000 uA |
2 |
35 V |
SMALL OUTLINE |
35 V |
150 Cel |
POWER |
-55 Cel |
MATTE TIN |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
35 V |
50 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.004 us |
1 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
Tin (Sn) |
R-PDSO-G2 |
1 |
Not Qualified |
.4 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
1000 V |
150 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
4 A |
.76 V |
SCHOTTKY |
500 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
1600 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.004 us |
1 uA |
1 |
75 V |
SMALL OUTLINE |
100 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
LOW POWER LOSS |
1 |
1 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.225 A |
1.25 V |
.05 us |
.1 uA |
1 |
240 V |
SMALL OUTLINE |
Rectifier Diodes |
350 V |
150 Cel |
HIGH VOLTAGE FAST RECOVERY |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
350 V |
1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.7 V |
SCHOTTKY |
400 uA |
1 |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
LOW POWER LOSS |
1 |
DO-214AA |
50 A |
e3 |
30 |
250 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.62 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-214AC |
40 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
.05 us |
10 uA |
1 |
400 V |
SMALL OUTLINE |
Rectifier Diodes |
400 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-214AC |
400 V |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
5 uA |
1 |
1000 V |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
175 Cel |
EFFICIENCY |
-65 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-214BA |
1000 V |
30 A |
e3 |
30 |
250 |
SILICON |
AEC-Q101 |
|||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.8 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
HIGH POWER |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
40 A |
e3 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.86 V |
SCHOTTKY |
4 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
175 Cel |
POWER |
R-PDSO-F2 |
LOW LEAKAGE CURRENT |
1 |
50 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.69 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
125 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
LOW POWER LOSS |
1 |
100 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.25 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
600 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.67 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
150 V |
175 Cel |
EFFICIENCY |
Matte Tin (Sn) - annealed |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
100 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.85 V |
.035 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
R-PSFM-T2 |
CATHODE |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
TO-220AC |
100 A |
e3 |
SILICON |
|||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 us |
AVALANCHE |
1 |
SMALL OUTLINE |
400 V |
R-PDSO-C2 |
Not Qualified |
1 |
DO-214AC |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.