Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.62 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
175 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
LOW POWER LOSS |
1 |
DO-214AC |
50 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
SCHOTTKY |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G2 |
1 |
.38 W |
1 |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.33 V |
.005 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.2 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.75 V |
SCHOTTKY |
500 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-214AB |
100 A |
e3 |
40 |
260 |
SILICON |
|||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.77 V |
SCHOTTKY |
100 uA |
1 |
SMALL OUTLINE |
60 V |
150 Cel |
POWER |
-40 Cel |
R-PDSO-C2 |
1 |
75 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.37 V |
.01 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
DO-213AA |
15 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
3 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
600 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
HIGH RELIABILITY |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
Microsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.06 us |
1 |
LONG FORM |
1000 V |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.78 V |
SCHOTTKY |
500 uA |
1 |
100 V |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
175 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
50 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.42 V |
SCHOTTKY |
1000 uA |
1 |
30 V |
SMALL OUTLINE |
30 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.45 W |
LOW POWER LOSS |
1 |
30 V |
12 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
GENERAL PURPOSE |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
150 A |
SILICON |
||||||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.7 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
GENERAL PURPOSE |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
150 A |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.8 A |
1.3 V |
.5 us |
5 uA |
1 |
1000 V |
SMALL OUTLINE |
1000 V |
150 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-F2 |
1 |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.78 V |
SCHOTTKY |
500 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE |
1 |
DO-214AA |
50 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-F2 |
1 |
.5 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
4 A |
.5 V |
SCHOTTKY |
2000 uA |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
POWER |
-65 Cel |
TIN |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE |
1 |
DO-214AB |
80 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
-65 Cel |
BRIGHT TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
.004 us |
1 |
LONG FORM |
100 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.8 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
50 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-214AC |
40 A |
e3 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
Tin (Sn) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH SPEED SWITCH |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.42 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
R-PDSO-F2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
60 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
1000 V |
150 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.26 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
150 Cel |
R-PDSO-G2 |
Not Qualified |
HIGH RELIABILITY |
1 |
6.5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
.25 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
125 Cel |
Matte Tin (Sn) |
R-PDSO-G2 |
1 |
.15 W |
1 |
.75 A |
e3 |
10 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.16 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
EFFICIENCY |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.375 W |
1 |
9 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
10 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
1 |
DO-221AC |
30 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH SPEED SWITCH |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.7 A |
1.1 V |
1.8 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
DO-219AB |
25 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.004 us |
1 |
SMALL OUTLINE |
90 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
HIGH RELIABILITY |
1 |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.5 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
R-PDSO-F2 |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.6 V |
.01 us |
SCHOTTKY |
100 uA |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW POWER LOSS |
1 |
DO-41 |
25 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.78 V |
.02 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
175 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-214AC |
40 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
200 V |
175 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-41 |
30 A |
SILICON |
||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.9 V |
SCHOTTKY |
50 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
POWER |
-65 Cel |
TIN |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE |
1 |
130 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
.35 W |
1 |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.75 V |
SCHOTTKY |
1000 uA |
1 |
20 V |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-41 |
25 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.85 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
175 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
CATHODE |
Not Qualified |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
40 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
2 |
NO |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
150 A |
SCHOTTKY |
2 |
FLANGE MOUNT |
35 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
R-XUFM-X2 |
CATHODE |
Not Qualified |
1 |
2000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.85 V |
SCHOTTKY |
100 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
1 |
DO-214AC |
80 A |
e3 |
10 |
260 |
SILICON |
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|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1.25 V |
.05 us |
.1 uA |
1 |
200 V |
SMALL OUTLINE |
Rectifier Diodes |
250 V |
150 Cel |
HIGH VOLTAGE |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.2 W |
1 |
TO-236AB |
250 V |
2.5 A |
e3 |
30 |
260 |
SILICON |
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|
Toshiba |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.003 us |
.2 uA |
1 |
80 V |
SMALL OUTLINE |
100 V |
150 Cel |
GENERAL PURPOSE |
R-PDSO-F2 |
.15 W |
1 |
1 A |
SILICON |
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|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.5 us |
1 uA |
1 |
SMALL OUTLINE |
400 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
SNUBBER DIODE |
1 |
DO-214AC |
40 A |
e3 |
SILICON |
AEC-Q101 |
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|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.32 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
10 V |
150 Cel |
GENERAL PURPOSE |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.31 W |
1 |
5 A |
e3 |
30 |
260 |
SILICON |
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|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.75 V |
SCHOTTKY |
50 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
175 Cel |
POWER |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
DO-214AC |
40 A |
e3 |
10 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.