ELLIPTICAL Diodes & Rectifiers 475

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BY203-20STR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.25 A

.3 us

AVALANCHE

1

LONG FORM

2000 V

150 Cel

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

1

20 A

e2

30

260

SILICON

BYV27-100-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

.88 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

100 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

DO-204AP

50 A

e2

30

260

SILICON

BYV28-200T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1.9 A

1.1 V

.025 us

AVALANCHE

1 uA

1

LONG FORM

200 V

175 Cel

GENERAL PURPOSE

E-LALF-W2

ISOLATED

Not Qualified

1

90 A

SILICON

BYV28-200-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3.5 A

.89 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

90 A

e2

30

260

SILICON

BYV27-150

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

E-LALF-W2

1

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

DO-204AP

50 A

e1

30

260

SILICON

BYV27/150

Diodes Incorporated

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1.1 V

.025 us

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

EFFICIENCY

TIN LEAD

E-LALF-W2

ISOLATED

Not Qualified

1

50 A

e0

SILICON

BYV28-200

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3.5 A

1.1 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

Tin/Silver (Sn/Ag)

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

90 A

e2

30

260

SILICON

BYW36-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1.1 V

.2 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

FAST SOFT RECOVERY

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

1

50 A

e2

30

260

SILICON

1N5619TR

Central Semiconductor

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

PLASTIC/EPOXY

SINGLE

1 A

1.2 V

.25 us

.5 uA

1

600 V

LONG FORM

600 V

FAST RECOVERY

TIN LEAD

E-PALF-W2

ISOLATED

Not Qualified

1

50 A

e0

SILICON

BYV96ET/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

AVALANCHE

1

LONG FORM

175 Cel

E-LALF-W2

ISOLATED

Not Qualified

LEAKAGE CURRENT IS NOT AT 25 DEG C

1

SILICON

BYW56-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1 V

4 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

50 A

e2

30

260

SILICON

BYW56T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

.8 V

3 us

AVALANCHE

1 uA

1

1000 V

LONG FORM

1000 V

175 Cel

GENERAL PURPOSE

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

1100 V

50 A

SILICON

IEC-134

1N5626-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1 V

6 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

100 A

e2

SILICON

BYV27-400

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1.25 A

.82 V

.05 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

400 V

175 Cel

GENERAL PURPOSE

E-LALF-W2

1

ISOLATED

Not Qualified

1

50 A

225

SILICON

1N5624

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1 V

6 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

100 A

e2

SILICON

1N5060T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

3 us

AVALANCHE

1

LONG FORM

400 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

CECC50008-015

1N5060TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1.15 V

4 us

AVALANCHE

1 uA

1

LONG FORM

Rectifier Diodes

400 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

50 A

e2

30

260

SILICON

1N5061TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1.15 V

4 us

AVALANCHE

1 uA

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

50 A

e2

30

260

SILICON

1N5061T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

3 us

AVALANCHE

1

LONG FORM

600 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

CECC50008-015

1N5627-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1 V

7.5 us

AVALANCHE

1 uA

1

LONG FORM

Rectifier Diodes

800 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN/SILVER (SN/AG)

E-LALF-W2

ISOLATED

1

100 A

e2

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5627TR

Central Semiconductor

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

PLASTIC/EPOXY

SINGLE

3 A

1

LONG FORM

800 V

GENERAL PURPOSE

TIN LEAD

E-PALF-W2

ISOLATED

Not Qualified

1

125 A

e0

SILICON

BY228TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1.5 V

20 us

AVALANCHE

140 uA

1

1500 V

LONG FORM

1650 V

140 Cel

EFFICIENCY

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

1

50 A

e2

30

260

SILICON

BYM36E-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2.9 A

1.78 V

.15 us

AVALANCHE

5 uA

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

FAST RECOVERY

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

1

65 A

e2

SILICON

BYV27-600-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

.85 V

.04 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

ULTRA FAST SOFT RECOVERY

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

1

50 A

e2

30

260

SILICON

BYV28-100-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3.5 A

.89 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

100 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

90 A

e2

30

260

SILICON

BYV38-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1.1 V

.3 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

FAST SOFT RECOVERY

-55 Cel

E-LALF-W2

ISOLATED

1

50 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

BYW54T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

.8 V

3 us

AVALANCHE

1 uA

1

600 V

LONG FORM

600 V

175 Cel

GENERAL PURPOSE

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

650 V

50 A

SILICON

IEC-134

BYW54-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1 V

4 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

GENERAL PURPOSE

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

1

50 A

e2

30

260

SILICON

BYW86-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1 V

7.5 us

AVALANCHE

1 uA

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

100 A

e2

30

260

SILICON

SF4007-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1 A

1.7 V

.075 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

30 A

e2

30

260

SILICON

BY8016T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.003 A

.1 us

AVALANCHE

1

LONG FORM

19000 V

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

934030480133

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2.08 A

.15 us

AVALANCHE

1

LONG FORM

1400 V

ULTRA FAST SOFT RECOVERY

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

45 A

SILICON

934045080153

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.65 A

.6 us

AVALANCHE

1

LONG FORM

5000 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

IEC-134

BY8010T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.005 A

.1 us

AVALANCHE

1

LONG FORM

12000 V

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

BY8114T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.005 A

.06 us

AVALANCHE

1

LONG FORM

17000 V

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

933959460153

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.004 A

.075 us

1

LONG FORM

10000 V

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

933818500113

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2.08 A

.03 us

AVALANCHE

1

LONG FORM

600 V

ULTRA FAST SOFT RECOVERY

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

45 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

933363610113

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

3 us

AVALANCHE

1

LONG FORM

600 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-134

933363630163

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

3 us

AVALANCHE

1

LONG FORM

1000 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

IEC-134

933818490113

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2.08 A

.03 us

AVALANCHE

1

LONG FORM

400 V

ULTRA FAST SOFT RECOVERY

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

45 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

934045090113

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.575 A

.35 us

AVALANCHE

1

LONG FORM

5000 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-134

BY8406

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.01 A

25 V

.1 us

1

LONG FORM

Rectifier Diodes

8000 V

120 Cel

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

SILICON

BY8004T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.02 A

.1 us

AVALANCHE

1

LONG FORM

5000 V

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

BY8108

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.005 A

44.5 V

.06 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

10000 V

120 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

933076450113

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

1 V

3 us

AVALANCHE

1 uA

1

800 V

LONG FORM

800 V

175 Cel

GENERAL PURPOSE

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

900 V

50 A

SILICON

IEC 134

BY8424

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.003 A

98 V

.1 us

1

LONG FORM

Rectifier Diodes

30000 V

120 Cel

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

SILICON

BY527

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

.8 V

3 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1250 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

50 A

SILICON

IEC 134

934055951112

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2.08 A

.03 us

AVALANCHE

1

LONG FORM

600 V

ULTRA FAST SOFT RECOVERY

E-LALF-W2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

45 A

SILICON

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.