ELLIPTICAL Diodes & Rectifiers 475

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BYW56-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1 V

4 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

50 A

e2

30

260

SILICON

JANTX1N5811USTR

Sensitron Semiconductor

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ELLIPTICAL

GLASS

SINGLE

6 A

.925 V

.03 us

5 uA

1

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

E-LELF-R2

ISOLATED

Not Qualified

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

MIL-19500

BYV27-200-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

.88 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

EFFICIENCY

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

1

DO-204AP

50 A

e2

SILICON

BYV26E-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1 A

1.3 V

.075 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

1

DO-204AP

30 A

10

260

SILICON

BY203-20STAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.25 A

.3 us

AVALANCHE

1

LONG FORM

2000 V

150 Cel

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

1

20 A

e2

30

260

SILICON

BYV27-200-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

.88 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

EFFICIENCY

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

1

DO-204AP

50 A

e2

30

260

SILICON

BYV27-200T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1.3 A

1.07 V

.025 us

AVALANCHE

1 uA

1

LONG FORM

200 V

175 Cel

GENERAL PURPOSE

E-LALF-W2

ISOLATED

Not Qualified

1

50 A

SILICON

BYV26C-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

UNSPECIFIED

SINGLE

.8 A

1.3 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

-55 Cel

TIN SILVER

E-XALF-W2

1

ISOLATED

1

30 A

e2

SILICON

BYV27/200

Diodes Incorporated

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1.1 V

.025 us

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

EFFICIENCY

TIN LEAD

E-LALF-W2

ISOLATED

Not Qualified

1

50 A

e0

SILICON

BYV27-200

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

DO-204AP

50 A

e2

30

260

SILICON

1N5062TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

4 us

AVALANCHE

1

LONG FORM

800 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED, PATENTED DEVICE

1

DO-204AP

50 A

e2

30

260

SILICON

1N5062T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

3 us

AVALANCHE

1

LONG FORM

800 V

175 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

CECC50008-015

SF1600-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1 A

3.4 V

.075 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1600 V

175 Cel

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

30 A

e2

30

260

SILICON

BYV28-200-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3.5 A

.89 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

90 A

e2

30

260

SILICON

BYV26CT/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.65 A

.03 us

AVALANCHE

1

LONG FORM

600 V

175 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

BYV26C-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1 A

1.3 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

1

30 A

e2

30

260

SILICON

SS3612

Sensitron Semiconductor

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

UNSPECIFIED

SINGLE

1 A

5 us

1

LONG FORM

E-XALF-W2

ISOLATED

Not Qualified

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

BYV27-150-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

.88 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

DO-204AP

50 A

e2

30

260

SILICON

BYV28-150

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3.5 A

1.1 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

Tin/Silver (Sn/Ag)

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

90 A

e2

30

260

SILICON

BY448TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1.6 V

20 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1500 V

140 Cel

EFFICIENCY

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

1

30 A

e2

30

260

SILICON

1N5059T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.8 A

3 us

AVALANCHE

1

LONG FORM

200 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

CECC50008-015

1N5059TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

1.15 V

4 us

AVALANCHE

1 uA

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

50 A

e2

30

260

SILICON

1N5418TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1.5 V

.1 us

AVALANCHE

1 uA

1

LONG FORM

Rectifier Diodes

400 V

175 Cel

FAST SOFT RECOVERY

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

ISOLATED

1

100 A

e2

30

260

SILICON

SF5408-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1.7 V

.075 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

TIN SILVER

E-LALF-W2

ISOLATED

1

150 A

e2

30

260

SILICON

BYV26C

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1 A

2.5 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

1

30 A

e2

30

260

SILICON

BYV26E

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1 A

2.5 V

.075 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED, PATENTED DEVICE

1

DO-204AP

30 A

e2

30

260

SILICON

BY228TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1.5 V

20 us

AVALANCHE

140 uA

1

1500 V

LONG FORM

Rectifier Diodes

1650 V

140 Cel

EFFICIENCY

TIN SILVER

E-LALF-W2

ISOLATED

Not Qualified

1

50 A

e2

30

260

SILICON

JANTXV1N5811US.TR

Sensitron Semiconductor

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ELLIPTICAL

GLASS

SINGLE

6 A

.875 V

.03 us

5 uA

1

150 V

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

E-LELF-R2

ISOLATED

HIGH RELIABILITY

1

125 A

SILICON

MIL-PRF-19500

BYV26E-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1 A

1.3 V

.075 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

ISOLATED

Not Qualified

1

DO-204AP

30 A

e2

30

260

SILICON

BYV26ET/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.65 A

.075 us

AVALANCHE

1

LONG FORM

1000 V

175 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

IEC-134

1N5625-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3 A

1 V

7.5 us

AVALANCHE

1 uA

1

LONG FORM

Rectifier Diodes

400 V

175 Cel

GENERAL PURPOSE

-55 Cel

E-LALF-W2

ISOLATED

1

100 A

SILICON

1N5625TR

Central Semiconductor

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

PLASTIC/EPOXY

SINGLE

3 A

1

LONG FORM

400 V

GENERAL PURPOSE

TIN LEAD

E-PALF-W2

ISOLATED

Not Qualified

1

125 A

e0

SILICON

BYV96E

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1.5 A

.3 us

1

LONG FORM

1000 V

175 Cel

EFFICIENCY

-65 Cel

TIN LEAD

E-LALF-W2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

DO-204AP

35 A

e0

SILICON

BYV28-150T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1.9 A

1.1 V

.025 us

AVALANCHE

1 uA

1

LONG FORM

150 V

175 Cel

GENERAL PURPOSE

E-LALF-W2

ISOLATED

Not Qualified

1

90 A

SILICON

BYV28-150-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3.5 A

.89 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

90 A

e2

30

260

SILICON

BYV28-150-TAP

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

3.5 A

.89 V

.03 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

TIN SILVER

E-LALF-W2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

90 A

e2

30

260

SILICON

V03J

Renesas Electronics

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1.3 A

1.1 V

3 us

1

LONG FORM

Rectifier Diodes

800 V

175 Cel

GENERAL PURPOSE

E-LALF-W2

ISOLATED

Not Qualified

1

40 A

SILICON

1N5190TR

Central Semiconductor

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

PLASTIC/EPOXY

SINGLE

3 A

.4 us

1

LONG FORM

600 V

FAST RECOVERY

TIN LEAD

E-PALF-W2

ISOLATED

Not Qualified

1

80 A

e0

SILICON

1N5190/TR

Microsemi

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

PLASTIC/EPOXY

SINGLE

3 A

.4 us

1

LONG FORM

600 V

FAST RECOVERY

TIN LEAD

E-PALF-W2

ISOLATED

Not Qualified

1

80 A

e0

SILICON

BYV99

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.55 A

1.5 V

.015 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

150 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

20 A

SILICON

1N4004GT/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1 A

1

LONG FORM

400 V

175 Cel

E-LALF-W2

ISOLATED

Not Qualified

1

SILICON

BYV27-100-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

.88 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

100 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

DO-204AP

50 A

e2

30

260

SILICON

BYV27-100T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1.3 A

1.07 V

.025 us

AVALANCHE

1 uA

1

LONG FORM

100 V

175 Cel

GENERAL PURPOSE

E-LALF-W2

ISOLATED

Not Qualified

1

50 A

SILICON

BYV27-150-TR

Vishay Intertechnology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

2 A

.88 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

Tin/Silver (Sn96.5Ag3.5)

E-LALF-W2

1

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

DO-204AP

50 A

e2

30

260

SILICON

BYV27-150T/R

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

1.3 A

1.07 V

.025 us

AVALANCHE

1 uA

1

LONG FORM

150 V

175 Cel

GENERAL PURPOSE

E-LALF-W2

ISOLATED

Not Qualified

1

50 A

SILICON

BYX90G

NXP Semiconductors

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

.55 A

14.5 V

.35 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

7500 V

165 Cel

-65 Cel

E-LALF-W2

ISOLATED

Not Qualified

LEAKAGE CURRENT IS NOT AT 25 DEG C

1

20 A

SILICON

1N5617TR

Central Semiconductor

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

UNSPECIFIED

SINGLE

1 A

1.2 V

.15 us

.5 uA

1

400 V

LONG FORM

400 V

55 Cel

FAST RECOVERY

TIN LEAD

E-XALF-W2

ISOLATED

Not Qualified

1

50 A

e0

SILICON

1N5617.TR

Micross Components

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

UNSPECIFIED

SINGLE

1 A

1.2 V

.15 us

.5 uA

1

400 V

LONG FORM

400 V

55 Cel

FAST RECOVERY

TIN LEAD

E-XALF-W2

ISOLATED

Not Qualified

1

50 A

e0

SILICON

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.