Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1 V |
4 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
Sensitron Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ELLIPTICAL |
GLASS |
SINGLE |
6 A |
.925 V |
.03 us |
5 uA |
1 |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
E-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-204AP |
50 A |
e2 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
1.3 V |
.075 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-204AP |
30 A |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.25 A |
.3 us |
AVALANCHE |
1 |
LONG FORM |
2000 V |
150 Cel |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
20 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.3 A |
1.07 V |
.025 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
200 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
UNSPECIFIED |
SINGLE |
.8 A |
1.3 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
-55 Cel |
TIN SILVER |
E-XALF-W2 |
1 |
ISOLATED |
1 |
30 A |
e2 |
SILICON |
|||||||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1.1 V |
.025 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
EFFICIENCY |
TIN LEAD |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
4 us |
AVALANCHE |
1 |
LONG FORM |
800 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED, PATENTED DEVICE |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.8 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
800 V |
175 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
CECC50008-015 |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
3.4 V |
.075 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1600 V |
175 Cel |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
1 |
30 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3.5 A |
.89 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
90 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.65 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
175 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
1.3 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
30 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
UNSPECIFIED |
SINGLE |
1 A |
5 us |
1 |
LONG FORM |
E-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3.5 A |
1.1 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn/Ag) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
90 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1.6 V |
20 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1500 V |
140 Cel |
EFFICIENCY |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
1 |
30 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.8 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
200 V |
175 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
CECC50008-015 |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1.15 V |
4 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1.5 V |
.1 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
FAST SOFT RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
ISOLATED |
1 |
100 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1.7 V |
.075 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
1 |
150 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
2.5 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
30 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
2.5 V |
.075 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED, PATENTED DEVICE |
1 |
DO-204AP |
30 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1.5 V |
20 us |
AVALANCHE |
140 uA |
1 |
1500 V |
LONG FORM |
Rectifier Diodes |
1650 V |
140 Cel |
EFFICIENCY |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
Sensitron Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ELLIPTICAL |
GLASS |
SINGLE |
6 A |
.875 V |
.03 us |
5 uA |
1 |
150 V |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
E-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
125 A |
SILICON |
MIL-PRF-19500 |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
1.3 V |
.075 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-204AP |
30 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.65 A |
.075 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC-134 |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1 V |
7.5 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
E-LALF-W2 |
ISOLATED |
1 |
100 A |
SILICON |
||||||||||||||||||||||||||||
Central Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
400 V |
GENERAL PURPOSE |
TIN LEAD |
E-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
125 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.5 A |
.3 us |
1 |
LONG FORM |
1000 V |
175 Cel |
EFFICIENCY |
-65 Cel |
TIN LEAD |
E-LALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AP |
35 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.9 A |
1.1 V |
.025 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
150 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
90 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3.5 A |
.89 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
90 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3.5 A |
.89 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
90 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
Renesas Electronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.3 A |
1.1 V |
3 us |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
40 A |
SILICON |
|||||||||||||||||||||||||||||||
Central Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
PLASTIC/EPOXY |
SINGLE |
3 A |
.4 us |
1 |
LONG FORM |
600 V |
FAST RECOVERY |
TIN LEAD |
E-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
80 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
PLASTIC/EPOXY |
SINGLE |
3 A |
.4 us |
1 |
LONG FORM |
600 V |
FAST RECOVERY |
TIN LEAD |
E-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
80 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.55 A |
1.5 V |
.015 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
20 A |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
175 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.3 A |
1.07 V |
.025 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
100 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.3 A |
1.07 V |
.025 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
150 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
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NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.55 A |
14.5 V |
.35 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
7500 V |
165 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
20 A |
SILICON |
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Central Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
UNSPECIFIED |
SINGLE |
1 A |
1.2 V |
.15 us |
.5 uA |
1 |
400 V |
LONG FORM |
400 V |
55 Cel |
FAST RECOVERY |
TIN LEAD |
E-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e0 |
SILICON |
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Micross Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
UNSPECIFIED |
SINGLE |
1 A |
1.2 V |
.15 us |
.5 uA |
1 |
400 V |
LONG FORM |
400 V |
55 Cel |
FAST RECOVERY |
TIN LEAD |
E-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e0 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.