Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.35 V |
.06 us |
5 uA |
1 |
LONG FORM |
600 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
35 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
1 V |
10 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
400 A |
SILICON |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.48 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
220 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
1.1 V |
SCHOTTKY |
1000 uA |
1 |
200 V |
LONG FORM |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
120 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.5 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.5 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.45 A |
1.5 V |
4 uA |
1 |
LONG FORM |
Rectifier Diodes |
1600 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN SILVER |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS TYPICAL |
1 |
50 A |
e2 |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
20 A |
.55 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
45 V |
200 Cel |
EFFICIENCY |
PURE TIN |
O-PALF-W2 |
ISOLATED |
LOW POWER LOSS |
1 |
275 A |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.42 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE |
1 |
DO-41 |
20 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.8 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
75 A |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
-40 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
35 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
9 A |
.37 V |
SCHOTTKY |
7000 uA |
1 |
LONG FORM |
15 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AR |
2900 A |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
9 A |
.37 V |
SCHOTTKY |
7000 uA |
1 |
LONG FORM |
15 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AR |
2900 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
10 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
600 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
Matte Tin (Sn) - annealed |
1 |
DO-35 |
4 A |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.1 A |
1 V |
.05 us |
.1 uA |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
200 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-35 |
e0 |
SILICON |
|||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
100 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-204AL |
30 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Continental Device India |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
5 uA |
1 |
400 V |
LONG FORM |
400 V |
125 Cel |
LOW POWER |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-41 |
400 V |
30 A |
SILICON |
TS-16949 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
175 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
1000 V |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
-65 Cel |
Tin (Sn) |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
1 V |
.004 us |
100 uA |
1 |
50 V |
LONG FORM |
Rectifier Diodes |
50 V |
175 Cel |
FAST RECOVERY |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-204AH |
4 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
.025 uA |
1 |
LONG FORM |
75 V |
200 Cel |
TIN |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-34 |
4 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
.004 us |
1 |
LONG FORM |
75 V |
200 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
.5 W |
1 |
DO-34 |
e3 |
30 |
260 |
SILICON |
IEC-134 |
|||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.2 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.2 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
30 V |
125 Cel |
-55 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AL |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
90 V |
175 Cel |
TIN |
O-LALF-W2 |
ISOLATED |
.3 W |
1 |
DO-34 |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.95 V |
10 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
125 Cel |
GENERAL PURPOSE |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
400 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.95 V |
10 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
EFFICIENCY |
-65 Cel |
PURE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
250 A |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
.9 V |
.004 us |
SCHOTTKY |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
35 V |
125 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-34 |
.5 A |
e3 |
30 |
260 |
SILICON |
CECC50001-059 |
||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.3 A |
1.07 V |
.025 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
100 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.3 A |
1.07 V |
.025 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
150 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.55 A |
14.5 V |
.35 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
7500 V |
165 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
20 A |
SILICON |
|||||||||||||||||||||||||||||
|
Electronic Devices |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.025 A |
48 V |
.1 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
30000 V |
125 Cel |
-55 Cel |
TIN SILVER COPPER |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
3 A |
e1 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.1 V |
20 us |
1 |
LONG FORM |
Rectifier Diodes |
1500 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AC |
40 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 V |
.035 us |
1 uA |
1 |
LONG FORM |
700 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
3 us |
1 |
LONG FORM |
125 V |
Tin/Lead (Sn/Pb) |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/241H |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.005 us |
.5 uA |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
.75 W |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
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|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
-65 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-41 |
25 A |
e3 |
260 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.65 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
-40 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
25 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
35 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
50 A |
e3 |
SILICON |
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|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.79 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-65 Cel |
BRIGHT TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
100 A |
e3 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.