END Diodes & Rectifiers 2,209

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

933699360115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

250 V

175 Cel

PURE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

1

9 A

SILICON

PS07J,135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ELLIPTICAL

GLASS

SINGLE

1.8 A

3 us

1

LONG FORM

600 V

150 Cel

GENERAL PURPOSE

-65 Cel

E-LELF-R2

ISOLATED

Not Qualified

1

25 A

SILICON

BYD57M

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.4 A

2.1 V

.075 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

5 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

BYD17J

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.6 A

.93 V

3 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

1

20 A

e3

SILICON

933812330115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.85 A

.025 us

AVALANCHE

1

LONG FORM

50 V

O-LELF-R2

ISOLATED

Not Qualified

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

PS07D,135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ELLIPTICAL

GLASS

SINGLE

1.8 A

3 us

1

LONG FORM

200 V

150 Cel

GENERAL PURPOSE

-65 Cel

E-LELF-R2

ISOLATED

Not Qualified

1

25 A

SILICON

933812260135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.6 A

1.05 V

3 us

AVALANCHE

1 uA

1

800 V

LONG FORM

800 V

175 Cel

GENERAL PURPOSE

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

900 V

20 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-134

PS07G

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ELLIPTICAL

GLASS

SINGLE

1.8 A

3 us

1

LONG FORM

400 V

GENERAL PURPOSE

E-LELF-R2

ISOLATED

Not Qualified

1

25 A

SILICON

BYD57U

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.4 A

1.7 V

.15 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

1200 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

5 A

SILICON

BYD37J

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.6 A

1.1 V

.25 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

1

20 A

e3

SILICON

PRS07G,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.6 A

.25 us

1

LONG FORM

400 V

150 Cel

-65 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

1

e3

SILICON

BYD37MT/R

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.6 A

1.3 V

.3 us

AVALANCHE

1 uA

1

1000 V

LONG FORM

1000 V

175 Cel

FAST SOFT RECOVERY

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

1100 V

20 A

SILICON

IEC-134

BAS81112

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.03 A

1 V

SCHOTTKY

.2 uA

1

LONG FORM

125 Cel

O-LELF-R2

ISOLATED

Not Qualified

.21 W

1

.5 A

SILICON

BAV102-T

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

200 V

175 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

5 A

e3

SILICON

BAV105115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.006 us

1

LONG FORM

60 V

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

SILICON

BAV105/T3

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.3 A

1.25 V

.006 us

.1 uA

1

LONG FORM

60 V

200 Cel

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

4 A

SILICON

PMLL4150

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.3 A

1 V

.006 us

.1 uA

1

LONG FORM

Rectifier Diodes

75 V

200 Cel

O-LELF-R2

ISOLATED

Not Qualified

.5 W

HIGH SPEED SWITCH

1

4 A

SILICON

PRLL4001T/R

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.68 A

1

LONG FORM

50 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAS45AL112

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1 V

1.5 us

.001 uA

1

LONG FORM

125 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

4 A

SILICON

BAS81T/R

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.03 A

1 V

SCHOTTKY

.2 uA

1

LONG FORM

40 V

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

.5 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAV100/T3

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

60 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

5 A

SILICON

BAV102/T3

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

200 V

175 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

5 A

e3

SILICON

PMLL4150135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.006 us

1

LONG FORM

75 V

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

SILICON

BAS86T/R

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.9 V

.004 us

SCHOTTKY

5 uA

1

LONG FORM

Rectifier Diodes

50 V

125 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.3 W

ULTRA HIGH SPEED SWITCH

1

.5 A

e3

30

260

SILICON

BAV102,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

1

5 A

e3

30

260

SILICON

BAV101-T

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

120 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

5 A

SILICON

PMLL4448-T

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.004 us

.025 uA

1

LONG FORM

100 V

200 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

.5 W

HIGH SPEED SWITCH

1

2 A

e3

SILICON

PMLL4446115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.004 us

1

LONG FORM

75 V

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

SILICON

PRLL4001,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.68 A

1

LONG FORM

50 V

175 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAS81,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.03 A

1 V

SCHOTTKY

.2 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

.5 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAS82112

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.03 A

1 V

SCHOTTKY

.2 uA

1

LONG FORM

125 Cel

O-LELF-R2

ISOLATED

Not Qualified

.21 W

1

.5 A

SILICON

BAS45ALT/R

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1 V

1.5 us

1

LONG FORM

Rectifier Diodes

125 V

175 Cel

MATTE TIN

O-LELF-R2

ISOLATED

Not Qualified

.4 W

LOW LEAKAGE CURRENT

1

4 A

e3

40

260

SILICON

BAS85112

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

SCHOTTKY

1

LONG FORM

O-LELF-R2

ISOLATED

Not Qualified

1

SILICON

BAV101

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

Rectifier Diodes

120 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

5 A

SILICON

PMLL4153,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.88 V

.004 us

.05 uA

1

LONG FORM

Rectifier Diodes

75 V

200 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

HIGH SPEED SWITCH

1

e3

30

260

SILICON

PMLL4148L/T1

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.004 us

1

LONG FORM

100 V

200 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

.5 W

HIGH SPEED SWITCH

1

e3

SILICON

BAS45AL

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1 V

1.5 us

1

LONG FORM

Rectifier Diodes

125 V

175 Cel

Tin (Sn)

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

LOW LEAKAGE CURRENT

1

4 A

e3

30

260

SILICON

PRLL5819135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

SCHOTTKY

1

LONG FORM

40 V

125 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

.71 W

1

e3

SILICON

BAS32L-T

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.004 us

5 uA

1

LONG FORM

100 V

200 Cel

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

2 A

SILICON

PMLL4448112

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.004 us

1

LONG FORM

75 V

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

SILICON

PMLL4446135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.004 us

1

LONG FORM

75 V

200 Cel

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

SILICON

BAV103-T

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

250 V

175 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

5 A

e3

SILICON

BAS85/T3

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.8 V

.004 us

SCHOTTKY

2 uA

1

LONG FORM

30 V

125 Cel

-40 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

ULTRA HIGH SPEED SWITCH

1

5 A

e3

SILICON

PMLL4148115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.004 us

1

LONG FORM

75 V

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

SILICON

BAS82,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.03 A

1 V

SCHOTTKY

.2 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

.5 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAS86112

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.004 us

SCHOTTKY

1

LONG FORM

O-LELF-R2

ISOLATED

Not Qualified

1

SILICON

BAS86135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.004 us

SCHOTTKY

1

LONG FORM

125 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

SILICON

BAV103/T3

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

250 V

175 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

5 A

e3

SILICON

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.