Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
25 A |
1 |
DISK BUTTON |
250 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-CEDB-N2 |
Not Qualified |
1 |
400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
25 A |
1.18 V |
1 |
DISK BUTTON |
Rectifier Diodes |
250 V |
175 Cel |
GENERAL PURPOSE |
TIN |
O-CEDB-N2 |
Not Qualified |
1 |
400 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.005 us |
1 |
LONG FORM |
75 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
DO-213AA |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
25 A |
SCHOTTKY |
1 |
DISK BUTTON |
200 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PEDB-N2 |
Not Qualified |
1 |
400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1.2 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
55 V |
175 Cel |
1 |
2 A |
SILICON |
|||||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
O-XELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
70 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
4 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.215 A |
.715 V |
.006 us |
2 |
LONG FORM |
Rectifier Diodes |
70 V |
150 Cel |
-65 Cel |
TIN LEAD |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
2 A |
e0 |
235 |
SILICON |
||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.004 us |
1 |
LONG FORM |
100 V |
175 Cel |
O-PELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
4 A |
SILICON |
||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
1.3 V |
.006 us |
BLANK |
2 |
LONG FORM |
Rectifier Diodes |
70 V |
150 Cel |
-55 Cel |
TIN LEAD |
R-PDSO-G3 |
1 |
Not Qualified |
.225 W |
TO-236AB |
.5 A |
e0 |
30 |
235 |
SILICON |
|||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.004 us |
1 |
LONG FORM |
100 V |
175 Cel |
O-PELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
4 A |
SILICON |
||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.62 V |
.006 us |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
ULTRA FAST |
1 |
DO-213AC |
4 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.5 A |
1 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
80 V |
125 Cel |
-65 Cel |
Matte Tin (Sn) |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.75 V |
SCHOTTKY |
300 uA |
1 |
LONG FORM |
20 V |
125 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
|||||||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.5 A |
1 V |
SCHOTTKY |
200 uA |
1 |
LONG FORM |
Rectifier Diodes |
80 V |
125 Cel |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
10 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.65 V |
.005 us |
SCHOTTKY |
.5 uA |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
FAST SWITCHING |
1 |
4 A |
e3 |
30 |
235 |
SILICON |
|||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.7 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
125 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
40 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.85 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.35 A |
1 V |
.01 us |
SCHOTTKY |
10 uA |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.33 W |
FAST SWITCHING |
1 |
7.5 A |
SILICON |
|||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.85 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
30 V |
125 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
|||||||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.85 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
20 V |
125 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
|||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.75 V |
SCHOTTKY |
300 uA |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.85 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.45 V |
.005 us |
SCHOTTKY |
.5 uA |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
FAST SWITCHING |
1 |
4 A |
e3 |
30 |
235 |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.8 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
400 V |
TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
200 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
.25 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC 134 |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.25 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
60 V |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.4 W |
1 |
9 A |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.4 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC 134 |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.03 A |
SCHOTTKY |
1 |
LONG FORM |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
1.05 V |
3 us |
AVALANCHE |
1 uA |
1 |
200 V |
LONG FORM |
200 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
225 V |
20 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-134 |
||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.85 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
100 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.85 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
150 V |
175 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
.3 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-134 |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.4 A |
.15 us |
AVALANCHE |
1 |
LONG FORM |
300 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-134 |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
200 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.4 A |
.075 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
.25 us |
1 |
LONG FORM |
600 V |
150 Cel |
-65 Cel |
TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
.25 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-134 |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
.93 V |
3 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
20 A |
e3 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
.25 us |
1 |
LONG FORM |
400 V |
150 Cel |
-65 Cel |
TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.8 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
400 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC 134 |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.34 A |
.3 us |
AVALANCHE |
1 |
LONG FORM |
2000 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.