END Diodes & Rectifiers 2,209

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

JANS1N6640US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

.3 A

1 V

.004 us

.1 uA

1

LONG FORM

75 V

175 Cel

-65 Cel

TIN LEAD

O-XELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

2.5 A

e0

SILICON

MIL-19500/609D

JANTXV1N5617US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.15 us

1

LONG FORM

Tin/Lead (Sn/Pb)

O-LELF-R2

ISOLATED

Qualified

1

e0

SILICON

MIL-19500/429J

LL103BR13

Diotec Semiconductor Ag

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.35 A

.6 V

.01 us

SCHOTTKY

5 uA

1

20 V

LONG FORM

30 V

125 Cel

GENERAL PURPOSE

-55 Cel

O-LELF-R2

1

ISOLATED

.4 W

1

15 A

SILICON

LL4002GL0G

Taiwan Semiconductor

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

100 V

150 Cel

-65 Cel

O-PELF-R2

ISOLATED

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

LL4148-7-F

Diodes Incorporated

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.15 A

.004 us

1

LONG FORM

75 V

MATTE TIN

O-PELF-R2

1

ISOLATED

Not Qualified

.5 W

1

e3

SILICON

LL42-GS18

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.4 V

.5 us

SCHOTTKY

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

TIN SILVER

O-LELF-R2

1

ISOLATED

Not Qualified

.2 W

1

DO-213AA

4 A

e2

30

260

SILICON

MCL103C-TR

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.6 V

.01 us

SCHOTTKY

5 uA

1

10 V

LONG FORM

Rectifier Diodes

20 V

125 Cel

GENERAL PURPOSE

Tin/Silver (Sn/Ag)

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

LOW LEAKAGE CURRENT

1

20 V

15 A

e2

40

260

SILICON

MCL103C-TR3

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.6 V

.01 us

SCHOTTKY

5 uA

1

10 V

LONG FORM

Rectifier Diodes

20 V

125 Cel

GENERAL PURPOSE

TIN SILVER

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

LOW LEAKAGE CURRENT

1

20 V

15 A

e2

30

260

SILICON

RGL1M

Diotec Semiconductor Ag

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.3 V

.5 us

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

-50 Cel

Tin/Silver/Copper - with Nickel barrier

O-PELF-R2

1

ISOLATED

Not Qualified

1

DO-213AA

30 A

5

260

SILICON

TMMBAT41

STMicroelectronics

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.1 A

1 V

SCHOTTKY

.1 uA

1

LONG FORM

Rectifier Diodes

100 V

125 Cel

-65 Cel

Matte Tin (Sn) - annealed

O-LELF-R2

1

ISOLATED

Not Qualified

.1 W

1

.75 A

e3

30

235

SILICON

BAS86-M-08

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.3 V

.005 us

SCHOTTKY

1

LONG FORM

Rectifier Diodes

50 V

125 Cel

O-LELF-R2

ISOLATED

Not Qualified

.2 W

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAV103T/R

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

Rectifier Diodes

250 V

175 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

1

5 A

e3

30

260

SILICON

BAV103T&R

Continental Device India

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.075 us

.1 uA

1

200 V

LONG FORM

250 V

175 Cel

HIGH VOLTAGE FAST RECOVERY

-65 Cel

O-LELF-R2

ISOLATED

.3 W

TR, 7 INCH: 2500

1

1 A

SILICON

TS-16949

BYD17G,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.6 A

1.05 V

3 us

AVALANCHE

1 uA

1

400 V

LONG FORM

400 V

175 Cel

GENERAL PURPOSE

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

450 V

20 A

SILICON

IEC-134

D711N60TXPSA1

Infineon Technologies

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

1050 A

1

DISK BUTTON

6000 V

GENERAL PURPOSE

O-CEDB-N2

1

8500 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

DL4003-TP

Micro Commercial Components

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.1 V

5 uA

1

LONG FORM

Rectifier Diodes

200 V

150 Cel

Matte Tin (Sn)

O-PELF-R2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

30 A

e3

10

260

SILICON

DL4007

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

1000 V

150 Cel

-55 Cel

O-PELF-R2

ISOLATED

Not Qualified

HIGH RELIABILITY

1

30 A

SILICON

UL RECOGNIZED

FDLL333

Onsemi

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.89 V

1

LONG FORM

Rectifier Diodes

50 V

175 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

1

DO-213AC

4 A

e3

30

260

SILICON

FDLL3595

Onsemi

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.68 V

3 us

1

LONG FORM

Rectifier Diodes

125 V

200 Cel

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

1

DO-213AC

4 A

e3

30

260

SILICON

GL34G-E3/83

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.5 A

1.2 V

1.5 us

5 uA

1

400 V

LONG FORM

Rectifier Diodes

400 V

175 Cel

GENERAL PURPOSE

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

1

DO-213AA

10 A

e3

30

260

SILICON

JAN1N4150UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.004 us

1

LONG FORM

TIN LEAD

O-LELF-R2

1

ISOLATED

Qualified

1

DO-213AA

e0

SILICON

MIL-19500/231H

JANS1N5617US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.15 us

1

LONG FORM

400 V

Tin/Lead (Sn/Pb)

O-LELF-R2

ISOLATED

Qualified

1

e0

SILICON

MIL-19500/429J

JANS1N5809US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

100 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

5 W

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

MIL-19500

JANTX1N3595US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.15 A

1 V

1

LONG FORM

Rectifier Diodes

125 V

175 Cel

O-LELF-R2

ISOLATED

Qualified

.5 A

SILICON

MIL-19500

JANTX1N5417US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.15 us

1

LONG FORM

FAST RECOVERY POWER

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

80 A

e0

SILICON

MIL-19500/411L

JANTX1N6639US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

.3 A

1.2 V

.004 us

.1 uA

1

LONG FORM

175 Cel

-65 Cel

TIN LEAD

O-XELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

2.5 A

e0

SILICON

MIL-19500/609D

JANTXV1N4150UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.004 us

1

LONG FORM

TIN LEAD

O-LELF-R2

1

ISOLATED

Qualified

1

DO-213AA

e0

SILICON

MIL-19500/231H

PMLL4150T/R

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.3 A

1 V

.006 us

.1 uA

1

LONG FORM

Rectifier Diodes

75 V

200 Cel

O-LELF-R2

ISOLATED

Not Qualified

.5 W

HIGH SPEED SWITCH

1

4 A

SILICON

PMLL4448

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.004 us

.025 uA

1

LONG FORM

Rectifier Diodes

100 V

200 Cel

Tin (Sn)

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

HIGH SPEED SWITCH

1

2 A

e3

30

260

SILICON

RLS4148TE11A

ROHM

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

METAL

SINGLE

.15 A

1 V

.004 us

5 uA

1

LONG FORM

100 V

200 Cel

-65 Cel

Tin (Sn)

O-MELF-R2

1

ISOLATED

Not Qualified

.5 W

1

2 A

e3

10

260

SILICON

SM4006_R2_100A1

Panjit International

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.1 V

5 uA

1

800 V

LONG FORM

800 V

150 Cel

-65 Cel

O-PELF-R2

ISOLATED

LOW LEAKAGE CURRENT

1

30 A

SILICON

SM4007Q

Diotec Semiconductor Ag

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

1000 V

O-PELF-R2

1

ISOLATED

Not Qualified

1

DO-213AB

260

SILICON

TMBAT49FILM

STMicroelectronics

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.5 A

1 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

80 V

125 Cel

-65 Cel

Matte Tin (Sn)

O-LELF-R2

ISOLATED

Not Qualified

1

10 A

e3

30

260

SILICON

VS-SD800C30L

Vishay Intertechnology

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

1180 A

1.66 V

50000 uA

1

DISK BUTTON

3000 V

150 Cel

HIGH VOLTAGE HIGH POWER

-40 Cel

O-CEDB-N2

1

DO-200AB

14240 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

W4534NC060

Littelfuse

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

4543 A

16 us

1

DISK BUTTON

600 V

GENERAL PURPOSE

O-CEDB-N2

Not Qualified

1

44000 A

SILICON

1N5819M-13

Diodes Incorporated

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

SCHOTTKY

1

LONG FORM

40 V

150 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

HIGH RELIABILITY

1

SILICON

1N6625US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.08 us

AVALANCHE

1

LONG FORM

1000 V

150 Cel

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

HIGH RELIABILITY

1

e0

SILICON

BAV303-TR

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1 V

.05 us

15 uA

1

200 V

LONG FORM

Rectifier Diodes

250 V

175 Cel

HIGH VOLTAGE

TIN SILVER

O-LELF-R2

1

ISOLATED

Not Qualified

1

250 V

1 A

e2

30

260

SILICON

BYD17M,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.6 A

3 us

AVALANCHE

1

LONG FORM

1000 V

175 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

SILICON

IEC 134

CDLL4148T&R

Continental Device India

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.15 A

1 V

.004 us

20 uA

1

75 V

LONG FORM

80 V

200 Cel

GENERAL PURPOSE

-65 Cel

O-LELF-R2

ISOLATED

.5 W

TR, 7 INCH: 2500

1

75 V

.5 A

SILICON

TS-16949

CDLL5711-TR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.033 A

SCHOTTKY

1

LONG FORM

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

DO-213AA

e0

SILICON

GL41M-E3/97

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

1.2 V

10 uA

1

1000 V

LONG FORM

Rectifier Diodes

1000 V

175 Cel

GENERAL PURPOSE

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

1

DO-213AB

30 A

e3

30

250

SILICON

JAN1N5417US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.15 us

1

LONG FORM

FAST RECOVERY POWER

O-LELF-R2

ISOLATED

Qualified

1

80 A

SILICON

MIL-19500/411L

JAN1N6638US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

.3 A

.0045 us

1

LONG FORM

125 V

TIN LEAD

O-XELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

e0

SILICON

MIL-19500/578E

JANS1N5822.TR

Semtech

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.7 V

SCHOTTKY

100 uA

1

40 V

LONG FORM

40 V

125 Cel

GENERAL PURPOSE

-65 Cel

O-LELF-R2

ISOLATED

HIGH RELIABILITY

1

80 A

SILICON

MIL-19500

JANTX1N5616US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

2 us

1

LONG FORM

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

e0

SILICON

MIL-19500/427K

JANTX1N6638US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

.3 A

1.1 V

.0045 us

.5 uA

1

LONG FORM

125 V

175 Cel

-65 Cel

TIN LEAD

O-XELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

2.5 A

e0

SILICON

MIL-19500/578E

JANTXV1N5552US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

1

LONG FORM

POWER

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

100 A

e0

SILICON

MIL-19500/420G

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.