END Diodes & Rectifiers 2,209

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

1N5819UR-1E3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.34 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

45 V

125 Cel

-65 Cel

O-LELF-R2

ISOLATED

METALLURGICALLY BONDED

1

DO-213AB

25 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

FDLL4448

Onsemi

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.004 us

1

LONG FORM

Rectifier Diodes

100 V

175 Cel

Matte Tin (Sn) - annealed

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

1

DO-213AC

4 A

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N4148UR-1-TR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1.2 V

.005 us

.5 uA

1

75 V

LONG FORM

75 V

175 Cel

SWITCHING

-65 Cel

TIN LEAD

O-LELF-R2

Not Qualified

METALLURGICALLY BONDED

1

DO-213AA

100 V

2 A

e0

SILICON

MIL-19500

BYM10-1000-E3/97

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

1.2 V

10 uA

1

1000 V

LONG FORM

Rectifier Diodes

1000 V

175 Cel

GENERAL PURPOSE

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

1

DO-213AB

30 A

e3

30

260

SILICON

JAN1N5806US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

2.5 A

.025 us

1

LONG FORM

150 V

ULTRA FAST RECOVERY POWER

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

O-LELF-R2

ISOLATED

Qualified

1

35 A

e0

SILICON

MIL-19500/477F

BAS85,135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.8 V

.004 us

SCHOTTKY

2 uA

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

-40 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

ULTRA HIGH SPEED SWITCH

1

5 A

e3

30

260

SILICON

BAV103,135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

Rectifier Diodes

250 V

175 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

1

5 A

e3

30

260

SILICON

PRLL5818,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.33 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

MATTE TIN

O-LELF-R2

ISOLATED

Not Qualified

1

25 A

e3

260

SILICON

1N4148UR-1E3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1.2 V

.005 us

.5 uA

1

75 V

LONG FORM

75 V

175 Cel

SWITCHING

-65 Cel

MATTE TIN

O-LELF-R2

METALLURGICALLY BONDED

1

DO-213AA

100 V

2 A

e3

SILICON

MIL-19500

PRLL5817,115

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.32 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

20 V

125 Cel

MATTE TIN

O-LELF-R2

ISOLATED

Not Qualified

1

25 A

e3

260

SILICON

SM5819

Diotec Semiconductor Ag

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

.9 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

40 V

150 Cel

-50 Cel

O-PELF-R2

1

ISOLATED

Not Qualified

1

DO-213AB

30 A

260

SILICON

1N4148UR-1-E3/TR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1.2 V

.005 us

.5 uA

1

75 V

LONG FORM

75 V

175 Cel

SWITCHING

-65 Cel

MATTE TIN

O-LELF-R2

.5 W

METALLURGICALLY BONDED

1

DO-213AA

100 V

e3

SILICON

MIL-19500

BYM10-400-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

1.1 V

10 uA

1

400 V

LONG FORM

Rectifier Diodes

400 V

175 Cel

GENERAL PURPOSE

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

1

DO-213AB

30 A

e3

30

260

SILICON

TMBYV10-40FILM

STMicroelectronics

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.85 V

SCHOTTKY

500 uA

1

LONG FORM

Rectifier Diodes

40 V

125 Cel

-65 Cel

MATTE TIN

O-LELF-R2

ISOLATED

Not Qualified

1

50 A

e3

260

SILICON

1N5806US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.025 us

AVALANCHE

1

LONG FORM

150 V

175 Cel

-65 Cel

TIN LEAD OVER NICKEL

O-LELF-R2

ISOLATED

HIGH RELIABILITY

1

e0

SILICON

1N5806USE3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.875 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

MATTE TIN

O-LELF-R2

ISOLATED

HIGH RELIABLITY

1

35 A

e3

SILICON

SM4004-W

Rectron

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

400 V

MATTE TIN

O-PELF-R2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

e3

SILICON

LL4004GL2

Taiwan Semiconductor

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

400 V

150 Cel

-65 Cel

O-PELF-R2

ISOLATED

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

JANS1N6642US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

.3 A

1.2 V

.005 us

.5 uA

1

LONG FORM

75 V

175 Cel

-65 Cel

TIN LEAD

O-XELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

2.5 A

e0

SILICON

MIL-19500/578E

JANTXV1N5711UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.033 A

SCHOTTKY

1

LONG FORM

50 V

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

DO-213AA

e0

SILICON

MIL-19500/444

BAV201-13

Diodes Incorporated

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.125 A

.05 us

1

LONG FORM

120 V

175 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

SILICON

LL4001GL0G

Taiwan Semiconductor

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

50 V

150 Cel

-65 Cel

O-PELF-R2

ISOLATED

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

PRLL5817,135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

SCHOTTKY

1

LONG FORM

20 V

125 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

SILICON

LL4001G+

Multicomp Pro

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

50 V

175 Cel

-65 Cel

O-PELF-R2

ISOLATED

1

DO-213AA

SILICON

FDLL914

Onsemi

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.004 us

1

LONG FORM

Rectifier Diodes

100 V

175 Cel

Matte Tin (Sn) - annealed

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

1

DO-213AC

4 A

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5819UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

SCHOTTKY

1

LONG FORM

45 V

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

DO-213AB

e0

SILICON

BAS385-TR3

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.24 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

Tin/Silver (Sn/Ag)

O-LELF-R2

1

ISOLATED

Not Qualified

1

5 A

e2

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAS385TR3

Vishay Telefunken

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

LONG FORM

O-LELF-R2

Not Qualified

BAV102,135

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.25 A

1.25 V

.05 us

.1 uA

1

LONG FORM

Rectifier Diodes

200 V

175 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

1

5 A

e3

30

260

SILICON

BAV103L0G

Taiwan Semiconductor

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.05 us

1

LONG FORM

250 V

200 Cel

-65 Cel

O-LELF-R2

ISOLATED

.5 W

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAS32L

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.004 us

5 uA

1

LONG FORM

Rectifier Diodes

100 V

200 Cel

Tin (Sn)

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

1

2 A

e3

30

260

SILICON

LL4148_R1_10001

Panjit International

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.15 A

.004 us

1

LONG FORM

100 V

175 Cel

-65 Cel

O-LELF-R2

ISOLATED

.5 W

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5811US-TR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

ULTRA FAST RECOVERY

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

JANTXV1N5806US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

2.5 A

.025 us

1

LONG FORM

ULTRA FAST RECOVERY POWER

Tin/Lead (Sn/Pb)

O-LELF-R2

ISOLATED

Qualified

1

35 A

e0

SILICON

MIL-19500/477F

SM4004_R2_100A1

Panjit International

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.1 V

5 uA

1

400 V

LONG FORM

400 V

150 Cel

-65 Cel

O-PELF-R2

ISOLATED

LOW LEAKAGE CURRENT

1

30 A

SILICON

DL4007-13-F

Diodes Incorporated

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.1 V

1

LONG FORM

Rectifier Diodes

1000 V

150 Cel

MATTE TIN

O-PELF-R2

1

ISOLATED

Not Qualified

1

30 A

e3

260

SILICON

BAS85GS18

Vishay Telefunken

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

LONG FORM

O-LELF-R2

Not Qualified

DO-213AA

BAS85-GS18

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.24 V

.005 us

SCHOTTKY

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

TIN SILVER

O-LELF-R2

1

ISOLATED

Not Qualified

.2 W

1

DO-213AA

.6 A

e2

30

260

SILICON

JANTX1N5822US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

SCHOTTKY

1

LONG FORM

40 V

125 Cel

GENERAL PURPOSE

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

80 A

e0

SILICON

MIL-19500/620E

BAS85-M-08

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.24 V

.005 us

SCHOTTKY

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

O-LELF-R2

ISOLATED

Not Qualified

.2 W

1

.6 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

JANTX1N5552US.TR

Semtech

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

1 V

2 us

1 uA

1

600 V

LONG FORM

600 V

GENERAL PURPOSE

O-LELF-R2

ISOLATED

1

150 A

SILICON

MIL-19500

JANTX1N5615US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.15 us

1

LONG FORM

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

e0

SILICON

MIL-19500/429J

MCL4448TR3

Vishay Telefunken

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

LONG FORM

O-LELF-R2

Not Qualified

MCL4448-TR3

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.15 A

.72 V

.008 us

1

LONG FORM

Rectifier Diodes

100 V

175 Cel

TIN SILVER

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

1

2 A

e2

30

260

SILICON

1N5711UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.033 A

SCHOTTKY

1

LONG FORM

50 V

TIN LEAD

O-LELF-R2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

DO-213AA

e0

SILICON

LL46-GS08

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.15 A

.25 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

100 V

125 Cel

TIN SILVER

O-LELF-R2

1

ISOLATED

Not Qualified

.2 W

1

DO-213AA

750 A

e2

30

260

SILICON

GL41M-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

1.2 V

10 uA

1

1000 V

LONG FORM

Rectifier Diodes

1000 V

175 Cel

GENERAL PURPOSE

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

1

DO-213AB

30 A

e3

30

250

SILICON

BAS85-M-18

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.24 V

.005 us

SCHOTTKY

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

O-LELF-R2

ISOLATED

Not Qualified

.2 W

1

.6 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.