Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.24 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
5 A |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.34 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
Matte Tin (Sn) |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
25 A |
e3 |
40 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
175 Cel |
-65 Cel |
Tin/Silver (Sn/Ag) |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
2 A |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1.5 us |
5 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
GENERAL PURPOSE |
-50 Cel |
TIN SILVER COPPER OVER NICKEL |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AB |
110 A |
10 |
260 |
SILICON |
||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
AVALANCHE |
1 |
LONG FORM |
400 V |
POWER |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||
Semtech |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.7 V |
SCHOTTKY |
100 uA |
1 |
40 V |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
80 A |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.7 V |
SCHOTTKY |
.1 uA |
1 |
40 V |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
80 A |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.005 us |
.5 uA |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.37 V |
.01 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
DO-213AA |
15 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.9 V |
.004 us |
SCHOTTKY |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
125 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.3 W |
ULTRA HIGH SPEED SWITCH |
1 |
.5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1.5 us |
5 uA |
1 |
1000 V |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-50 Cel |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AB |
110 A |
260 |
SILICON |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
75 V |
200 Cel |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213 |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.03 A |
.33 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AA |
.5 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
100 V |
200 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
Semtech |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.7 V |
SCHOTTKY |
100 uA |
1 |
40 V |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
80 A |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
50 V |
150 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.6 V |
.01 us |
SCHOTTKY |
5 uA |
1 |
20 V |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
GENERAL PURPOSE |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
30 V |
15 A |
e2 |
40 |
260 |
SILICON |
|||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
.41 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
70 V |
150 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
METALLURGICALLY BONDED |
1 |
DO-213AA |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.325 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.2 W |
1 |
1 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.9 V |
.005 us |
SCHOTTKY |
5 uA |
1 |
40 V |
LONG FORM |
Rectifier Diodes |
50 V |
125 Cel |
FAST RECOVERY |
-65 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
50 V |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-65 Cel |
Matte Tin (Sn) |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-213AB |
30 A |
e3 |
40 |
260 |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
2.5 A |
.025 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY POWER |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
35 A |
SILICON |
MIL-19500/477F |
||||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
GENERAL PURPOSE |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
80 A |
e0 |
SILICON |
MIL-19500/620E |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.6 V |
.01 us |
SCHOTTKY |
5 uA |
1 |
20 V |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
GENERAL PURPOSE |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
30 V |
15 A |
e2 |
40 |
260 |
SILICON |
|||||||||||||||||||
Frontier Electronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
140 V |
175 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
2 A |
e2 |
SILICON |
|||||||||||||||||||||||||||||
Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
LONG FORM |
O-LELF-R2 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.3 V |
.15 us |
5 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-213AA |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-65 Cel |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
40 |
260 |
SILICON |
||||||||||||||||||||||||||
Semtech |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.7 V |
SCHOTTKY |
100 uA |
1 |
40 V |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
80 A |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
1 |
LONG FORM |
POWER |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.15 us |
1 |
LONG FORM |
175 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
GLASS |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
MATTE TIN |
R-LELF-R2 |
ISOLATED |
.5 W |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
GENERAL PURPOSE |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
80 A |
e0 |
SILICON |
MIL-19500/620E |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.005 us |
.5 uA |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
|||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
GLASS |
SINGLE |
.45 A |
1 V |
5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
R-LELF-R2 |
ISOLATED |
LOW POWER LOSS |
1 |
2 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.05 us |
1 |
LONG FORM |
250 V |
200 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
.5 W |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.73 V |
.004 us |
5 uA |
1 |
LONG FORM |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
4 A |
SILICON |
||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.3 V |
.25 us |
5 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-213AA |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.4 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
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Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.008 us |
5 uA |
1 |
75 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
FAST RECOVERY |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
100 V |
2 A |
e2 |
30 |
260 |
SILICON |
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Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
.008 us |
1 |
LONG FORM |
100 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AA |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1600 A |
1.64 V |
50000 uA |
1 |
DISK BUTTON |
3000 V |
180 Cel |
HIGH VOLTAGE |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AB |
17400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.