Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.37 V |
.01 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
DO-213AA |
15 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
Weitron Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
O-PELF-R2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
10 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 A |
.05 us |
LONG FORM |
ULTRA FAST RECOVERY |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
70 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1650 A |
2.6 V |
3 us |
75000 uA |
1 |
DISK BUTTON |
3000 V |
150 Cel |
HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY |
-40 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
DO-200AC |
23000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
5 A |
2 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
175 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
100 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1460 A |
4.2 V |
100000 uA |
1 |
4500 V |
DISK BUTTON |
4500 V |
140 Cel |
POWER |
0 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
23000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2380 A |
2.5 V |
150000 uA |
1 |
4500 V |
DISK BUTTON |
4500 V |
140 Cel |
POWER |
0 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
40000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
3 us |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
MIL-19500/241H |
||||||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.35 A |
.37 V |
.01 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.4 W |
1 |
15 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.35 A |
.01 us |
SCHOTTKY |
1 |
LONG FORM |
40 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.4 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.35 A |
.37 V |
.01 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.4 W |
1 |
15 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.004 us |
5 uA |
1 |
75 V |
LONG FORM |
100 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
.5 W |
LOW LEAKAGE CURRENT |
1 |
.5 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1220 A |
5.6 V |
100000 uA |
1 |
6500 V |
DISK BUTTON |
6500 V |
140 Cel |
POWER |
0 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
16000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.6 V |
.045 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
400 V |
150 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
20 A |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.6 V |
.045 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
20 A |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
3000 A |
1.41 V |
75000 uA |
1 |
DISK BUTTON |
2000 V |
180 Cel |
HIGH VOLTAGE |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AC |
32460 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
650 A |
2.08 V |
15000 uA |
1 |
DISK BUTTON |
400 V |
180 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AA |
6335 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.6 V |
.045 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
400 V |
150 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
20 A |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.6 V |
.045 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
600 V |
150 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
20 A |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
25 A |
1.18 V |
SCHOTTKY |
1 |
DISK BUTTON |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN |
O-PEDB-N2 |
Not Qualified |
1 |
400 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-213AB |
30 A |
e3 |
40 |
250 |
SILICON |
|||||||||||||||||||||||
|
Good-ark Electronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
-55 Cel |
O-PELF-R2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-213AA |
25 A |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.4 us |
1 |
LONG FORM |
FAST RECOVERY POWER |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
||||||||||||||||||||||||||||||||
Rectron |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
800 V |
TIN |
O-PELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
125 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
40 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.4 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
ULTRA FAST RECOVERY |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
20 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
MIL |
||||||||||||||||||||||||||||
Abb |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
3246 A |
1 |
DISK BUTTON |
6000 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
ISOLATED |
Not Qualified |
1 |
40000 A |
SILICON |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
2 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1 V |
.05 us |
5 uA |
1 |
200 V |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE; HIGH RELIABILITY |
1 |
DO-213AB |
30 A |
e3 |
SILICON |
||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.2 us |
5 uA |
1 |
400 V |
LONG FORM |
400 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-PELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
30 |
250 |
SILICON |
|||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
100 V |
200 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
-55 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-213AB |
30 A |
e3 |
30 |
250 |
SILICON |
|||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
6000 A |
1.3 V |
1 |
DISK BUTTON |
Rectifier Diodes |
600 V |
180 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN SILVER |
O-CEDB-N2 |
ISOLATED |
Not Qualified |
1 |
50000 A |
e2 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1100 A |
1.44 V |
35000 uA |
1 |
DISK BUTTON |
3000 V |
150 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
11000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2080 A |
1.81 V |
75000 uA |
1 |
DISK BUTTON |
3000 V |
150 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AC |
25150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1925 A |
1.22 V |
75000 uA |
1 |
DISK BUTTON |
1000 V |
180 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AC |
37500 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.875 V |
.03 us |
AVALANCHE |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
125 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
100 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-213AB |
30 A |
e3 |
30 |
250 |
SILICON |
|||||||||||||||||||||
Temic Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.003 uA |
1 |
LONG FORM |
200 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
2 A |
SILICON |
||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
70 V |
175 Cel |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AA |
2 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
2 A |
e3 |
30 |
260 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.2 V |
10 uA |
1 |
800 V |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
40 |
250 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.7 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-213AB |
30 A |
e3 |
30 |
250 |
SILICON |
|||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
150 Cel |
-55 Cel |
O-PELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
30 A |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.35 V |
.05 us |
5 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-213AA |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
FAST RECOVERY POWER |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.