END Diodes & Rectifiers 2,209

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

LL103C-GS08

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.37 V

.01 us

SCHOTTKY

1

LONG FORM

Rectifier Diodes

20 V

Tin/Silver (Sn/Ag)

O-LELF-R2

1

ISOLATED

Not Qualified

.4 W

LOW LEAKAGE CURRENT

1

DO-213AA

15 A

e2

30

260

SILICON

MM18

Weitron Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

.55 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

O-PELF-R2

ISOLATED

FREE WHEELING DIODE

1

10 A

e0

SILICON

UES1306SM

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 A

.05 us

LONG FORM

ULTRA FAST RECOVERY

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

1

70 A

e0

SILICON

VS-SD1553C30S30K

Vishay Intertechnology

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

1650 A

2.6 V

3 us

75000 uA

1

DISK BUTTON

3000 V

150 Cel

HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY

-40 Cel

O-CEDB-N2

FREE WHEELING DIODE

1

DO-200AC

23000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5552US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

5 A

2 us

AVALANCHE

1

LONG FORM

600 V

175 Cel

POWER

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

HIGH RELIABILITY

1

100 A

e0

SILICON

CDLL5711

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.033 A

SCHOTTKY

1

LONG FORM

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

DO-213AA

e0

SILICON

D1031SH45TXPSA1

Infineon Technologies

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

1460 A

4.2 V

100000 uA

1

4500 V

DISK BUTTON

4500 V

140 Cel

POWER

0 Cel

O-CEDB-N2

FREE WHEELING DIODE

1

23000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

D1961SH45TXPSA1

Infineon Technologies

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

2380 A

2.5 V

150000 uA

1

4500 V

DISK BUTTON

4500 V

140 Cel

POWER

0 Cel

O-CEDB-N2

FREE WHEELING DIODE

1

40000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

JANTX1N3595UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.15 A

3 us

1

LONG FORM

TIN LEAD

O-LELF-R2

1

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

1

DO-213AA

e0

SILICON

MIL-19500/241H

LLSD103AT/R7

Panjit International

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.35 A

.37 V

.01 us

SCHOTTKY

1

LONG FORM

Rectifier Diodes

40 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

15 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

LMSD103AT/R13

Panjit International

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.35 A

.01 us

SCHOTTKY

1

LONG FORM

40 V

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

LQSD103AT/R7

Panjit International

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.35 A

.37 V

.01 us

SCHOTTKY

1

LONG FORM

Rectifier Diodes

40 V

175 Cel

O-LELF-R2

ISOLATED

Not Qualified

.4 W

1

15 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

MCL4448R13

Diotec Semiconductor Ag

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.15 A

1 V

.004 us

5 uA

1

75 V

LONG FORM

100 V

175 Cel

GENERAL PURPOSE

-55 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

.5 W

LOW LEAKAGE CURRENT

1

.5 A

e3

10

260

SILICON

D931SH65TXPSA1

Infineon Technologies

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

1220 A

5.6 V

100000 uA

1

6500 V

DISK BUTTON

6500 V

140 Cel

POWER

0 Cel

O-CEDB-N2

FREE WHEELING DIODE

1

16000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

JAN1N6621US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1.2 A

1.6 V

.045 us

AVALANCHE

.5 uA

1

LONG FORM

400 V

150 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

HIGH RELIABILITY

1

20 A

e0

SILICON

MIL-19500

JANS1N6621US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1.2 A

1.6 V

.045 us

AVALANCHE

.5 uA

1

LONG FORM

Rectifier Diodes

400 V

150 Cel

ULTRA FAST RECOVERY

-65 Cel

O-LELF-R2

ISOLATED

Qualified

HIGH RELIABILITY

1

20 A

SILICON

MIL-19500

VS-SD2500C20K

Vishay Intertechnology

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

3000 A

1.41 V

75000 uA

1

DISK BUTTON

2000 V

180 Cel

HIGH VOLTAGE

-40 Cel

O-CEDB-N2

1

DO-200AC

32460 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

VS-SD300C04C

Vishay Intertechnology

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

650 A

2.08 V

15000 uA

1

DISK BUTTON

400 V

180 Cel

HIGH VOLTAGE HIGH POWER

-40 Cel

O-CEDB-N2

1

DO-200AA

6335 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N6621US/TR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1.2 A

1.6 V

.045 us

AVALANCHE

.5 uA

1

LONG FORM

400 V

150 Cel

ULTRA FAST RECOVERY

-65 Cel

O-LELF-R2

ISOLATED

HIGH RELIABILITY

1

20 A

SILICON

JANTX1N6622US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1.2 A

1.6 V

.045 us

AVALANCHE

.5 uA

1

LONG FORM

600 V

150 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

HIGH RELIABILITY

1

20 A

e0

SILICON

MIL-19500

MR2510

Onsemi

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

25 A

1.18 V

SCHOTTKY

1

DISK BUTTON

Rectifier Diodes

1000 V

175 Cel

GENERAL PURPOSE

-65 Cel

TIN

O-PEDB-N2

Not Qualified

1

400 A

e3

260

SILICON

BYM11-1000-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.3 V

.5 us

1

LONG FORM

Rectifier Diodes

1000 V

175 Cel

-65 Cel

MATTE TIN

O-PELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE

1

DO-213AB

30 A

e3

40

250

SILICON

GL1M

Good-ark Electronics

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.1 V

1.5 us

1

LONG FORM

Rectifier Diodes

1000 V

150 Cel

-55 Cel

O-PELF-R2

ISOLATED

FREE WHEELING DIODE

1

DO-213AA

25 A

SILICON

JANTX1N5420US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.4 us

1

LONG FORM

FAST RECOVERY POWER

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

80 A

e0

SILICON

MIL-19500/411L

SM4006-W

Rectron

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

800 V

TIN

O-PELF-R2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

e3

SILICON

TMBYV10-60FILM

STMicroelectronics

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

1 V

SCHOTTKY

500 uA

1

LONG FORM

Rectifier Diodes

60 V

125 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

40 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

JANTX1N6622U

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1.2 A

1.4 V

.03 us

1

LONG FORM

Rectifier Diodes

600 V

175 Cel

ULTRA FAST RECOVERY

O-LELF-R2

ISOLATED

Not Qualified

1

20 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

MIL

5SDD31H6000

Abb

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

3246 A

1

DISK BUTTON

6000 V

150 Cel

GENERAL PURPOSE

-40 Cel

O-CEDB-N2

ISOLATED

Not Qualified

1

40000 A

SILICON

BAS32L/T3

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.004 us

5 uA

1

LONG FORM

Rectifier Diodes

100 V

200 Cel

TIN

O-LELF-R2

ISOLATED

Not Qualified

.5 W

1

2 A

e3

SILICON

BYM12-200-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

1 V

.05 us

5 uA

1

200 V

LONG FORM

Rectifier Diodes

200 V

175 Cel

EFFICIENCY

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE; HIGH RELIABILITY

1

DO-213AB

30 A

e3

SILICON

DL4936-13-F

Diodes Incorporated

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.2 V

.2 us

5 uA

1

400 V

LONG FORM

400 V

150 Cel

FAST RECOVERY

-65 Cel

MATTE TIN

O-PELF-R2

ISOLATED

Not Qualified

LOW LEAKAGE CURRENT

1

30 A

e3

30

260

SILICON

GL41G-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

1.1 V

10 uA

1

400 V

LONG FORM

Rectifier Diodes

400 V

175 Cel

GENERAL PURPOSE

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

1

DO-213AB

30 A

e3

30

250

SILICON

LL4448L1

Taiwan Semiconductor

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.15 A

.004 us

1

LONG FORM

100 V

200 Cel

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

1

DO-213AC

e3

30

260

SILICON

SGL41-40-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

.5 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

40 V

125 Cel

-55 Cel

MATTE TIN

O-PELF-R2

1

ISOLATED

Not Qualified

LOW POWER LOSS, FREE WHEELING DIODE

1

DO-213AB

30 A

e3

30

250

SILICON

SKN6000/06

Semikron International

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

6000 A

1.3 V

1

DISK BUTTON

Rectifier Diodes

600 V

180 Cel

GENERAL PURPOSE

-40 Cel

TIN SILVER

O-CEDB-N2

ISOLATED

Not Qualified

1

50000 A

e2

SILICON

VS-SD1100C30C

Vishay Intertechnology

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

1100 A

1.44 V

35000 uA

1

DISK BUTTON

3000 V

150 Cel

HIGH VOLTAGE HIGH POWER

-40 Cel

O-CEDB-N2

1

11000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

VS-SD1700C30K

Vishay Intertechnology

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

2080 A

1.81 V

75000 uA

1

DISK BUTTON

3000 V

150 Cel

HIGH VOLTAGE HIGH POWER

-40 Cel

O-CEDB-N2

1

DO-200AC

25150 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

VS-SD3000C10K

Vishay Intertechnology

RECTIFIER DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

1925 A

1.22 V

75000 uA

1

DISK BUTTON

1000 V

180 Cel

GENERAL PURPOSE

-40 Cel

O-CEDB-N2

1

DO-200AC

37500 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5811USE3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.875 V

.03 us

AVALANCHE

5 uA

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

MATTE TIN OVER NICKEL

O-LELF-R2

ISOLATED

HIGH RELIABILITY

1

125 A

e3

SILICON

1N6479-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1.1 V

10 uA

1

100 V

LONG FORM

Rectifier Diodes

100 V

175 Cel

GENERAL PURPOSE

-65 Cel

MATTE TIN

O-PELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY

1

DO-213AB

30 A

e3

30

250

SILICON

BAQ34GS08

Temic Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.003 uA

1

LONG FORM

200 Cel

O-LELF-R2

ISOLATED

Not Qualified

1

2 A

SILICON

BAQ34-GS08

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

1

LONG FORM

Rectifier Diodes

70 V

175 Cel

Tin/Silver (Sn97.5Ag2.5)

O-LELF-R2

1

ISOLATED

Not Qualified

1

DO-213AA

2 A

e2

30

260

SILICON

BAS32LT/R

NXP Semiconductors

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1 V

.004 us

5 uA

1

LONG FORM

Rectifier Diodes

100 V

200 Cel

TIN

O-LELF-R2

1

ISOLATED

Not Qualified

.5 W

1

2 A

e3

30

260

SILICON

BYM10-800-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

1.2 V

10 uA

1

800 V

LONG FORM

Rectifier Diodes

800 V

175 Cel

GENERAL PURPOSE

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

1

DO-213AB

30 A

e3

40

250

SILICON

BYM13-60-E3/96

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

.7 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

60 V

150 Cel

-55 Cel

MATTE TIN

O-PELF-R2

1

ISOLATED

Not Qualified

LOW POWER LOSS, FREE WHEELING DIODE

1

DO-213AB

30 A

e3

30

250

SILICON

DL4004

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

1 A

1

LONG FORM

400 V

150 Cel

-55 Cel

O-PELF-R2

ISOLATED

Not Qualified

HIGH RELIABILITY

1

30 A

SILICON

UL RECOGNIZED

EGL34G-E3/98

Vishay Intertechnology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.5 A

1.35 V

.05 us

5 uA

1

400 V

LONG FORM

Rectifier Diodes

400 V

175 Cel

EFFICIENCY

-65 Cel

MATTE TIN

O-PELF-R2

1

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY

1

DO-213AA

10 A

e3

30

260

SILICON

JANS1N5418US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.15 us

1

LONG FORM

FAST RECOVERY POWER

Tin/Lead (Sn/Pb)

O-LELF-R2

ISOLATED

Qualified

1

80 A

e0

SILICON

MIL-19500/411L

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.