Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
.025 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e3 |
30 |
260 |
SILICON |
CECC50001-021 |
||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
Tin (Sn) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH SPEED SWITCH |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
1 V |
.005 us |
SCHOTTKY |
2 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.23 W |
TO-236AB |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH SPEED SWITCH |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.8 V |
.005 us |
SCHOTTKY |
2 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.715 V |
.004 us |
.5 uA |
4 |
80 V |
SMALL OUTLINE |
Signal Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G6 |
1 |
Not Qualified |
.25 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
1 V |
.005 us |
SCHOTTKY |
2 uA |
2 |
25 V |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
1 |
TO-236AB |
.6 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.8 V |
.005 us |
SCHOTTKY |
2 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.215 A |
1.25 V |
.004 us |
.5 uA |
2 |
80 V |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
Tin (Sn) |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
TO-236AB |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 3 ELEMENTS |
.2 A |
.24 V |
SCHOTTKY |
2 uA |
3 |
25 V |
SMALL OUTLINE |
Other Diodes |
30 V |
125 Cel |
-65 Cel |
TIN |
R-PDSO-F6 |
1 |
Not Qualified |
.17 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
1 V |
.005 us |
SCHOTTKY |
2 uA |
2 |
25 V |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
1 |
TO-236AB |
.6 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
.715 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
.5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.125 A |
1.25 V |
.004 us |
2.5 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
TO-236AB |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.07 A |
1 V |
SCHOTTKY |
10 uA |
2 |
70 V |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
TO-236AB |
.1 A |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.25 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
9 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
1 V |
.005 us |
SCHOTTKY |
2 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
Tin (Sn) |
R-PDSO-G3 |
1 |
Not Qualified |
.23 W |
TO-236AB |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
.2 V |
.0059 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.4 W |
1 |
2.5 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.004 us |
1 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
85 V |
150 Cel |
TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.4 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.15 A |
1.25 V |
.004 us |
.5 uA |
2 |
80 V |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
1.25 V |
.004 us |
.5 uA |
1 |
80 V |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
1 |
TO-236AB |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.005 us |
SCHOTTKY |
2 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.23 W |
1 |
TO-236AB |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1.25 V |
.05 us |
.1 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
250 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
1 |
TO-236AB |
2.5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.07 A |
.41 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
Tin (Sn) |
R-PDSO-G3 |
1 |
Not Qualified |
.1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.24 V |
SCHOTTKY |
2 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
TIN |
R-PBCC-N3 |
1 |
Not Qualified |
.25 W |
.6 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5 A |
.49 V |
SCHOTTKY |
300 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-F2 |
1 |
.625 W |
1 |
70 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.16 A |
1.1 V |
3 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
85 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
TO-236AB |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.8 V |
.005 us |
SCHOTTKY |
2 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
150 Cel |
EFFICIENCY |
Tin (Sn) |
R-PDSO-F2 |
1 |
Not Qualified |
1.8 W |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
85 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.5 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 us |
AVALANCHE |
1 |
SMALL OUTLINE |
1000 V |
R-PDSO-C2 |
Not Qualified |
1 |
DO-214AC |
SILICON |
|||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.15 A |
1.25 V |
.004 us |
.5 uA |
2 |
80 V |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.215 A |
1.25 V |
.004 us |
.5 uA |
2 |
80 V |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
TO-236AB |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.66 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.35 W |
1 |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
1 V |
.005 us |
SCHOTTKY |
2 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
85 V |
125 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.23 W |
TO-236AB |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.24 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.175 A |
1.25 V |
.004 us |
1 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.54 V |
SCHOTTKY |
100 uA |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
EFFICIENCY |
TIN |
R-PDSO-F2 |
1 |
.57 W |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.1 A |
1.25 V |
.004 us |
2.5 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
Tin (Sn) |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
1 V |
.004 us |
5 uA |
1 |
LONG FORM |
100 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
DO-35 |
4 A |
SILICON |
CECC50001-021 |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.07 A |
.41 V |
SCHOTTKY |
10 uA |
2 |
70 V |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
SWITCHING |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
1 |
.1 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.12 A |
.38 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.715 V |
.004 us |
.5 uA |
4 |
80 V |
SMALL OUTLINE |
Signal Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G6 |
1 |
Not Qualified |
.25 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
.2 V |
.0059 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.44 W |
1 |
2.5 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
YES |
SINGLE |
3 A |
.53 V |
SCHOTTKY |
1 |
Rectifier Diodes |
60 V |
150 Cel |
TIN |
1 |
1 |
50 A |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.004 us |
1 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
85 V |
150 Cel |
TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.4 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.75 A |
.715 V |
.004 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
TIN |
R-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.25 W |
1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
GULL WING |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.8 V |
.005 us |
SCHOTTKY |
2 uA |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
1 |
.6 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
YES |
SINGLE |
.25 A |
.715 V |
.004 us |
1 |
Rectifier Diodes |
100 V |
150 Cel |
TIN |
1 |
1 |
4 A |
e3 |
30 |
260 |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.