Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.004 A |
52 V |
.2 us |
1 |
LONG FORM |
Rectifier Diodes |
12000 V |
120 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
SILICON |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
90 V |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.45 W |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
.5 us |
1 |
FLANGE MOUNT |
1500 V |
FAST RECOVERY POWER |
R-PSFM-T3 |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
SCHOTTKY |
1 |
FLANGE MOUNT |
20 V |
GENERAL PURPOSE |
R-PSFM-T2 |
CATHODE |
Not Qualified |
WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY |
1 |
TO-220AC |
150 A |
SILICON |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.12 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
150 Cel |
TIN |
R-PDSO-G3 |
Not Qualified |
e3 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
NO |
10 A |
.58 V |
SCHOTTKY |
Rectifier Diodes |
100 V |
175 Cel |
Tin (Sn) |
250 A |
e3 |
||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.15 A |
.004 us |
2 |
SMALL OUTLINE |
85 V |
PURE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.17 W |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.34 A |
.3 us |
AVALANCHE |
1 |
LONG FORM |
2000 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 BANKS, COMMON CATHODE, 2 ELEMENTS |
.25 A |
.004 us |
4 |
SMALL OUTLINE |
85 V |
TIN |
R-PDSO-G6 |
Not Qualified |
.35 W |
e3 |
SILICON |
||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
1.25 V |
.004 us |
.1 uA |
1 |
SMALL OUTLINE |
50 V |
150 Cel |
TIN |
R-PDSO-G3 |
Not Qualified |
.25 W |
1 |
TO-236AB |
4 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.05 A |
.2 us |
1 |
LONG FORM |
2200 V |
120 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.41 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
400 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
2.15 A |
1.05 V |
.05 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
VERY FAST RECOVERY |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.5 us |
1 |
LONG FORM |
1500 V |
GENERAL PURPOSE |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
60 A |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.006 us |
1 |
SMALL OUTLINE |
R-PDSO-G2 |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
90 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.45 W |
1 |
DO-35 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
NO |
SINGLE |
5 A |
5.4 V |
1 |
Rectifier Diodes |
4500 V |
175 Cel |
1 |
360 A |
|||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
20 A |
SCHOTTKY |
2 |
FLANGE MOUNT |
35 V |
GENERAL PURPOSE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY |
1 |
150 A |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.6 V |
1 us |
200 uA |
1 |
LONG FORM |
Rectifier Diodes |
1650 V |
140 Cel |
GENERAL PURPOSE |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
30 A |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
1 |
LONG FORM |
800 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.02 A |
.075 us |
1 |
LONG FORM |
6000 V |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
200 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
1 |
DO-35 |
9 A |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.005 A |
36 V |
.035 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
12000 V |
145 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
.5 A |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.025 us |
AVALANCHE |
1 |
SMALL OUTLINE |
100 V |
R-PDSO-C2 |
Not Qualified |
1 |
DO-214AC |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.65 A |
.25 us |
1 |
LONG FORM |
1200 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 us |
1 |
DISK BUTTON |
1700 V |
150 Cel |
GENERAL PURPOSE |
O-LADB-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.02 A |
.1 us |
1 |
LONG FORM |
5000 V |
120 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
NO |
SINGLE |
38 A |
1.3 V |
.045 us |
1 |
Rectifier Diodes |
100 V |
150 Cel |
1 |
1000 A |
||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
5 A |
1.5 V |
20 us |
200 uA |
1 |
LONG FORM |
Rectifier Diodes |
1200 V |
140 Cel |
MEDIUM POWER |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
50 A |
SILICON |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
.004 us |
SCHOTTKY |
1 |
LONG FORM |
30 V |
125 Cel |
PURE TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-34 |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
NO |
SINGLE |
5 A |
14.4 V |
1 |
Rectifier Diodes |
12000 V |
175 Cel |
1 |
360 A |
|||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.15 A |
.004 us |
2 |
SMALL OUTLINE |
85 V |
150 Cel |
PURE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.65 A |
1.2 V |
.25 us |
1 |
LONG FORM |
Rectifier Diodes |
1400 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
6 A |
SILICON |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.85 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
50 V |
175 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
6 A |
.94 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
GENERAL PURPOSE |
R-PSSO-G2 |
CATHODE |
Not Qualified |
1 |
70 A |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
NO |
SINGLE |
10 A |
21.6 V |
1 |
Rectifier Diodes |
18000 V |
175 Cel |
1 |
800 A |
|||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.5 A |
.6 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-35 |
9 A |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.015 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
150 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.1 A |
1.1 V |
.004 us |
.2 uA |
1 |
LONG FORM |
15 V |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.35 W |
1 |
DO-35 |
4 A |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.02 A |
.2 us |
1 |
LONG FORM |
5000 V |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.36 A |
.35 us |
AVALANCHE |
1 |
LONG FORM |
10000 V |
175 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC-134 |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.025 us |
1 |
FLANGE MOUNT |
200 V |
ULTRA FAST SOFT RECOVERY |
R-PSFM-T2 |
CATHODE |
Not Qualified |
1 |
TO-220AC |
88 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
8 A |
.025 us |
2 |
FLANGE MOUNT |
200 V |
ULTRA FAST SOFT RECOVERY |
R-PSFM-T3 |
CATHODE |
Not Qualified |
1 |
TO-220AB |
88 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.4 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.8 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
300 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.025 us |
2 |
FLANGE MOUNT |
150 V |
ULTRA FAST SOFT RECOVERY |
R-PSFM-T3 |
CATHODE |
Not Qualified |
1 |
TO-220AB |
137 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
9 A |
.06 us |
1 |
FLANGE MOUNT |
500 V |
ULTRA FAST SOFT RECOVERY |
R-PSFM-T2 |
CATHODE |
Not Qualified |
1 |
TO-220AC |
110 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.