MIXER DIODE Microwave Mixer & Detector Diodes 2,267

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Noise Figure	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Minimum Operating Frequency	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Maximum Operating Frequency
BAT19-AZ2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	1 V	1.2 pF	SCHOTTKY	.1 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35	10 V						SILICON
BAR11-AZ1	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35							SILICON
BAT19-B2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	1 V	1.2 pF	SCHOTTKY	.1 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35	10 V						SILICON
BAR11-AZ2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35							SILICON
BAT19-AR2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	1 V	1.2 pF	SCHOTTKY	.1 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35	10 V						SILICON
BAR10-AZ2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified				DO-35							SILICON
BAR19-AZX	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-35	4 V						SILICON
BAR19-ARX	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-35	4 V						SILICON
BAT19-AZX	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	1 V	1.2 pF	SCHOTTKY	.1 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35	10 V						SILICON
BAR10	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.035 A	1 V	1.2 pF	SCHOTTKY		1	LONG FORM	Rectifier Diodes	20 V	200 Cel	-65 Cel	Tin/Lead (Sn/Pb)	O-LALF-W2			ISOLATED	Not Qualified				DO-35		.1 A	e0				SILICON
BAT17DS	STMicroelectronics	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2	SMALL OUTLINE	Microwave Mixer Diodes		100 Cel		MATTE TIN	R-PDSO-G3		7 dB		Not Qualified					4 V		e3				SILICON
BAR19-AR2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-35	4 V						SILICON
BAR10-AZ1	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified				DO-35							SILICON
BAR11-AR1	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35							SILICON
BAT17FILM	STMicroelectronics	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	SMALL OUTLINE			100 Cel			R-PDSO-G3		7 dB		Not Qualified					4 V						SILICON
BAR19-B2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-35	4 V						SILICON
BAT19-AR1	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	1 V	1.2 pF	SCHOTTKY	.1 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35	10 V						SILICON
BAR10-AR1	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified				DO-35							SILICON
BAR19-AR1	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-35	4 V						SILICON
BAR10-AR2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified				DO-35							SILICON
BAT19	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	1 V	1.2 pF	SCHOTTKY	.1 uA	1	LONG FORM	Microwave Mixer Diodes		125 Cel	-65 Cel		O-LALF-W2		6 dB	ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35	10 V			.3 GHz			SILICON	1 GHz
BAR11	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.02 A	1 V	1.2 pF	SCHOTTKY		1	LONG FORM	Rectifier Diodes	15 V	200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35		.1 A					SILICON
BAR11-B2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35							SILICON
BAR19-AZ2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-35	4 V						SILICON
BAR10-B2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified				DO-35							SILICON
BAR19-AZ1	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-35	4 V						SILICON
BAR11-AR2	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			1.2 pF	SCHOTTKY		1	LONG FORM			200 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35							SILICON
BAT19-ARX	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	1 V	1.2 pF	SCHOTTKY	.1 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35	10 V						SILICON
BAT19-AZ1	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	1 V	1.2 pF	SCHOTTKY	.1 uA	1	LONG FORM			125 Cel			O-LALF-W2			ISOLATED	Not Qualified			MATCHED BATCH AVAILABLE	DO-35	10 V						SILICON
BAR19	STMicroelectronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1	LONG FORM	Rectifier Diodes	4 V	125 Cel	-65 Cel		O-LALF-W2			ISOLATED	Not Qualified				DO-35	4 V	.08 A					SILICON
BA592	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.1 A	1 V	1.4 pF			1	SMALL OUTLINE	Rectifier Diodes	35 V	150 Cel	-65 Cel		R-PDSO-G2				Not Qualified	.5 W										SILICON
934055230115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.05 pF	PLANAR DOPED BARRIER		1	SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-G2	1			Not Qualified	.5 W						e3				SILICON
934056830115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.2 pF	PLANAR DOPED BARRIER		1	SMALL OUTLINE					TIN	R-PDSO-F2				Not Qualified	.715 W						e3				SILICON
BA483T/R	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1	LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-34	35 V						SILICON
BA484T/R	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.6 pF		.1 uA	1	LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-34	35 V						SILICON
BA481143	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1.1 pF		10 uA	1	LONG FORM			100 Cel			O-LALF-W2		8 dB	ISOLATED	Not Qualified				DO-34	4 V						SILICON
BA481116	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1.1 pF		10 uA	1	LONG FORM			100 Cel			O-LALF-W2		8 dB	ISOLATED	Not Qualified				DO-34	4 V						SILICON
BA483153	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1	LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-34	35 V						SILICON
BA482153	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.2 pF		.1 uA	1	LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-34	35 V						SILICON
BA591	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.05 pF			1	SMALL OUTLINE	Varactors	35 V	150 Cel	-65 Cel	Tin (Sn)	R-PDSO-G2	1			Not Qualified	.5 W	.8 pF					e3		30	260	SILICON
BA277	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.1 A	1 V	1.2 pF			1	SMALL OUTLINE	Rectifier Diodes	35 V	150 Cel	-65 Cel	TIN	R-PDSO-F2				Not Qualified	.715 W						e3				SILICON
933912210235	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2	SMALL OUTLINE			100 Cel		TIN	R-PDSO-G3	1			Not Qualified	.25 W				4 V		e3				SILICON
BA483136	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1	LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified				DO-34	35 V						SILICON
BA231	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.2 A	.42 V	1.2 pF			1	LONG FORM	Rectifier Diodes	50 V				O-LALF-W2			ISOLATED	Not Qualified				DO-35							SILICON
PMBD354	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.03 A	.35 V	1 pF	SCHOTTKY		2	SMALL OUTLINE	Rectifier Diodes	4 V	100 Cel		Tin (Sn)	R-PDSO-G3	1			Not Qualified				TO-236AB			e3		30	260	SILICON
934056488115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY				SCHOTTKY		1	SMALL OUTLINE					PURE TIN	R-PDSO-G3	1			Not Qualified											SILICON
PMBD352212	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2	SMALL OUTLINE			100 Cel			R-PDSO-G3				Not Qualified	.25 W				4 V						SILICON
PMBD353212	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2	SMALL OUTLINE			100 Cel			R-PDSO-G3				Not Qualified	.25 W				4 V						SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84