3 Microwave Mixer & Detector Diodes 861

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals (1)
    • 3
    • 1
    • 10
    • 2
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

HSMS-2852-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

L BAND

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

ZERO BARRIER

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

.915 GHz

20

260

SILICON

4 GHz

HSMS-2800-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.41 V

2 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

70 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

20

260

SILICON

HSMS-2820-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND

.34 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

20

260

SILICON

MMBD452LT1G

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

LOW BARRIER

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.225 W

TO-236AB

e3

30

260

SILICON

DB3X317K0L

Panasonic

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

1 A

.52 V

SCHOTTKY

100 uA

1

30 V

SMALL OUTLINE

85 Cel

-40 Cel

TIN BISMUTH

R-PDSO-G3

1

TO-236AA

e6

SILICON

85 GHz

HSMS-2852-TR2G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

L BAND

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

ZERO BARRIER

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

.915 GHz

20

260

SILICON

4 GHz

BAT15-05W

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

X BAND

.35 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

LOW BARRIER

150 Cel

R-PDSO-G3

1

Not Qualified

.1 W

LOW NOISE

SILICON

12 GHz

HSMS-2800BLK

Agilent Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.4 V

2 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

70 V

150 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

SILICON

HSMS-2800-BLK

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.41 V

2 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

70 V

150 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

SILICON

HSMS-2852-TR1

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

150 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

.915 GHz

GALLIUM ARSENIDE

4 GHz

HSMS-282C-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

C BAND

.34 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

15 V

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

20

260

SILICON

MA4E2054B1-287T

TE Connectivity

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

X BAND

.02 A

.3 pF

SCHOTTKY

.5 uA

2

3 V

SMALL OUTLINE

LOW BARRIER

125 Cel

.075 W

-65 Cel

R-PDSO-G3

LOW NOISE

3 V

260

SILICON

DB3X314K0L

Panasonic

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

.03 A

.4 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

85 Cel

-40 Cel

R-PDSO-G3

TO-236AA

NOT SPECIFIED

NOT SPECIFIED

SILICON

HSMS-285B-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

SCHOTTKY

1

SMALL OUTLINE

Other Diodes

ZERO BARRIER

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

.915 GHz

20

260

SILICON

4 GHz

HSMS-285B-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

SCHOTTKY

1

SMALL OUTLINE

Other Diodes

ZERO BARRIER

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

.915 GHz

20

260

SILICON

4 GHz

HSMS-285BBLKG

Agilent Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

SCHOTTKY

1

SMALL OUTLINE

ZERO BARRIER

TIN

R-PDSO-G3

1

Not Qualified

e3

SILICON

1SS295-TE85L(F)

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.03 A

.32 V

.9 pF

SCHOTTKY

25 uA

2

.5 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

4 V

SILICON

HSMS-285C-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

L BAND

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

ZERO BARRIER

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

.915 GHz

20

260

SILICON

4 GHz

HSMS-285CBLKG

Agilent Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

L BAND

SCHOTTKY

2

SMALL OUTLINE

ZERO BARRIER

TIN

R-PDSO-G3

1

Not Qualified

e3

SILICON

HSMS-286C-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

C BAND

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

.915 GHz

20

260

SILICON

5.8 GHz

HSMS-8101-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

KU BAND

.26 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

10 GHz

20

260

SILICON

14 GHz

BAR18FILM

STMicroelectronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.41 V

2 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

70 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.2 W

e3

30

235

SILICON

HSMS-282B-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND

.34 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

20

260

SILICON

HSMS-2852-BLK

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

150 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

.915 GHz

GALLIUM ARSENIDE

4 GHz

MA704A

Panasonic

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

.03 A

.4 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

R-PDSO-G3

Not Qualified

TO-236

10

260

SILICON

MA704WK

Panasonic

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

L BAND

SCHOTTKY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

TO-236

10

260

SILICON

MMBD330T1G

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.6 V

1.5 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.12 W

LOW REVERSE LEAKAGE

e3

30

260

SILICON

BAT6804E6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

2

SMALL OUTLINE

150 Cel

TIN

R-PDSO-G3

1

.15 W

e3

SILICON

DMF3932-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

3

YES

SQUARE

UNSPECIFIED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

S BAND

.5 pF

SCHOTTKY

2

UNCASED CHIP

Microwave Mixer Diodes

LOW BARRIER

150 Cel

S-XUUC-N3

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

SILICON

HSMS-2814-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.41 V

2 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

20 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

20

260

SILICON

HSMS-2814-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.41 V

2 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

20 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

20

260

SILICON

HSMS-2822T31

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1 pF

SCHOTTKY

2

SMALL OUTLINE

150 Cel

.25 W

TIN

R-PDSO-G3

1

Not Qualified

e3

SILICON

HSMS-282C-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

C BAND

.34 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

15 V

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

20

260

SILICON

SMS7630-005LF

Skyworks Solutions

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

X BAND

.05 A

.24 V

.3 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

1 V

ZERO BARRIER

150 Cel

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.075 W

LOW NOISE

e3

40

260

SILICON

SMS7630-006

Skyworks Solutions

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

X BAND

.05 A

.01 V

.3 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

1 V

ZERO BARRIER

150 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.075 W

LOW NOISE

e0

30

245

SILICON

HSMS-2852#T30

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY TO C BAND

SCHOTTKY

2

SMALL OUTLINE

150 Cel

.15 W

TIN

R-PDSO-G3

1

Not Qualified

e3

SILICON

MMBD101LT1G

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.225 W

TO-236AB

e3

30

260

SILICON

HSMS-2860-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND

SCHOTTKY

1

SMALL OUTLINE

Other Diodes

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

.915 GHz

20

260

SILICON

5.8 GHz

HSMS-286F-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

C BAND

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

.915 GHz

20

260

SILICON

5.8 GHz

DB3X313N0L

Panasonic

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.13 A

.55 V

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

30 V

85 Cel

-40 Cel

R-PDSO-G3

1

TO-236AA

1 A

SILICON

PMBD353,215

NXP Semiconductors

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.03 A

.6 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

4 V

100 Cel

TIN

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

SILICON

DME2830-000

Skyworks Solutions

MIXER DIODE

TRIPLE

FLAT

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

KU BAND

.15 pF

SCHOTTKY

2

MICROWAVE

Microwave Mixer Diodes

MEDIUM BARRIER

R-CTMW-F3

1

6.5 dB

Not Qualified

12 GHz

40

260

SILICON

18 GHz

DMJ3934-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

3

YES

SQUARE

UNSPECIFIED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

S BAND

.5 pF

SCHOTTKY

2

UNCASED CHIP

Microwave Mixer Diodes

HIGH BARRIER

150 Cel

S-XUUC-N3

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

SILICON

HSMS-2804-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

1 A

1 V

2 pF

SCHOTTKY

.2 uA

2

50 V

SMALL OUTLINE

Rectifier Diodes

70 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

70 V

e4

20

260

SILICON

HSMS-280C-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.41 V

2 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

70 V

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

20

260

SILICON

HSMS-281C-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.41 V

2 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

20 V

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

20

260

SILICON

HSMS-2860-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND

.35 pF

SCHOTTKY

1

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

.25 W

e4

.915 GHz

20

260

SILICON

5.8 GHz

HSMS-286B-TR2G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND

SCHOTTKY

1

SMALL OUTLINE

Other Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

.915 GHz

20

260

SILICON

5.8 GHz

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84