END Microwave Mixer & Detector Diodes 94

  1. Home
  2. Microwave Mixer & Detector Diodes
Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position (1)
    • END
    • AXIAL
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 10
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

BA423L

NXP Semiconductors

MIXER DIODE

END

NO LEAD

2

YES

ROUND

GLASS

SINGLE

3.5 pF

1

LONG FORM

O-LELF-N2

ISOLATED

Not Qualified

SILICON

TGD0624XSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0654XSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0624SSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0653SSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0653XSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0654SSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0623SSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0683SSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0623XSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TGD0683XSMX

Texas Instruments

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

SINGLE

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

SCHOTTKY

1

LONG FORM

O-CELF-R2

ISOLATED

Not Qualified

GALLIUM ARSENIDE

TMMBAT19

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

30 A

1 V

1.2 pF

SCHOTTKY

.1 uA

1

LONG FORM

Rectifier Diodes

5 V

125 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

MATCHED BATCH AVAILABLE

10 V

SILICON

TMMBAT45

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

30 A

1 V

1.1 pF

SCHOTTKY

.1 uA

1

LONG FORM

Rectifier Diodes

15 V

125 Cel

-65 Cel

O-LELF-R2

7 dB

ISOLATED

Not Qualified

MATCHED BATCH AVAILABLE

15 V

.06 A

SILICON

TMMBAR11

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.02 A

.41 V

1.2 pF

SCHOTTKY

1

LONG FORM

Rectifier Diodes

15 V

200 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

MATCHED BATCH AVAILABLE

.1 A

SILICON

TMMBAT29

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

30 A

.55 V

1 pF

SCHOTTKY

.05 uA

1

LONG FORM

Rectifier Diodes

5 V

125 Cel

-65 Cel

O-LELF-R2

7 dB

ISOLATED

Not Qualified

5 V

.06 A

SILICON

TMM6263FILM

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

15 A

1 V

2.2 pF

SCHOTTKY

.2 uA

1

LONG FORM

Rectifier Diodes

60 V

200 Cel

-65 Cel

Matte Tin (Sn) - annealed

O-LELF-R2

1

ISOLATED

Not Qualified

MATCHED BATCH AVAILABLE

60 V

e3

30

235

SILICON

TMMBAR10

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.035 A

.41 V

1.2 pF

SCHOTTKY

1

LONG FORM

Rectifier Diodes

20 V

200 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

.1 A

SILICON

TMM5712

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.035 A

1 V

1.2 pF

SCHOTTKY

1

LONG FORM

Rectifier Diodes

20 V

200 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

.43 W

MATCHED BATCH AVAILABLE

SILICON

TMM5711

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.015 A

.41 V

2 pF

SCHOTTKY

1

LONG FORM

Rectifier Diodes

70 V

200 Cel

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

.43 W

MATCHED BATCH AVAILABLE

e0

SILICON

TMMBAR19

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

30 A

.6 V

1 pF

SCHOTTKY

.25 uA

1

LONG FORM

Rectifier Diodes

4 V

125 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

4 V

.06 A

SILICON

TMMBAR28

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.015 A

.41 V

2 pF

SCHOTTKY

1

LONG FORM

Rectifier Diodes

70 V

200 Cel

-65 Cel

O-LELF-R2

ISOLATED

Not Qualified

MATCHED BATCH AVAILABLE

.05 A

SILICON

TMM6263

STMicroelectronics

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.015 A

.41 V

2.2 pF

SCHOTTKY

1

LONG FORM

Rectifier Diodes

60 V

200 Cel

-65 Cel

MATTE TIN

O-LELF-R2

1

ISOLATED

Not Qualified

MATCHED BATCH AVAILABLE

e3

30

235

SILICON

BA423L-T

NXP Semiconductors

MIXER DIODE

END

NO LEAD

2

YES

ROUND

GLASS

SINGLE

3.5 pF

1

LONG FORM

O-LELF-N2

ISOLATED

Not Qualified

SILICON

BA683

NXP Semiconductors

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1 V

1.5 pF

SCHOTTKY

.05 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

35 V

SILICON

BA423AL115

NXP Semiconductors

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

50 A

.9 V

2.5 pF

.1 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

.21 W

20 V

SILICON

BA423AL135

NXP Semiconductors

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

50 A

.9 V

2.5 pF

.1 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

.21 W

20 V

SILICON

BA423AL112

NXP Semiconductors

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

50 A

.9 V

2.5 pF

.1 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

.21 W

20 V

SILICON

BA682T/R

NXP Semiconductors

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1 V

1.5 pF

SCHOTTKY

.05 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

35 V

SILICON

BA683-T

NXP Semiconductors

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1 V

1.5 pF

SCHOTTKY

.05 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

35 V

SILICON

BA682-T

NXP Semiconductors

MIXER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1 V

1.5 pF

SCHOTTKY

.05 uA

1

LONG FORM

150 Cel

O-LELF-R2

ISOLATED

Not Qualified

35 V

SILICON

BAT14-093ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.3 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

6.5 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT15-073ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.3 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

5.5 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT14-013ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.6 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

5.5 dB

ISOLATED

Not Qualified

.1 W

HIGH RELIABILITY

SILICON

BAT14-093H

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.3 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

6.5 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT14-033ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.6 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

6.5 dB

ISOLATED

Not Qualified

.1 W

HIGH RELIABILITY

SILICON

BAT15-043ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.35 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

5.5 dB

ISOLATED

Not Qualified

.1 W

HIGH RELIABILITY

SILICON

BAT15-073P

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.3 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

5.5 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT15-093P

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.3 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

6.5 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT14-073P

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.3 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

5.5 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT14-093P

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.3 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

6.5 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT15-113ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.25 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

7.5 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT15-103ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.25 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

6 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT14-013P

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.6 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

5.5 dB

ISOLATED

Not Qualified

.1 W

HIGH RELIABILITY

SILICON

BAT15-123ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.22 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

9 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

BAT15-013P

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.6 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

5.5 dB

ISOLATED

Not Qualified

.1 W

HIGH RELIABILITY

SILICON

BAT15-013ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.6 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

5.5 dB

ISOLATED

Not Qualified

.1 W

HIGH RELIABILITY

SILICON

BAT15-063ES

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.35 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

6.5 dB

ISOLATED

Not Qualified

.1 W

HIGH RELIABILITY

SILICON

BAT15-123P

Infineon Technologies

MIXER DIODE

END

NO LEAD

2

YES

ROUND

PLASTIC/EPOXY

SINGLE

.22 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

O-PELF-N2

9 dB

ISOLATED

Not Qualified

.05 W

HIGH RELIABILITY

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84