NXP Semiconductors - BA682-T

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Broadcom's HSMS-286C-TR1G is a Schottky microwave mixer diode with 2 elements, operating from 0.915 GHz to 5.8 GHz in C Band. It features a plastic/epoxy package, dual terminals with matte tin finish, and can withstand up to 150°C. Ideal for applications requiring high-frequency mixing and detection in compact designs.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Infineon Technologies' BAT62-03W is a single-config microwave mixer & detector diode with ultra high frequency range. It has a max diode capacitance of 0.6 pF and can operate at temperatures up to 150°C. This Schottky diode, made of silicon, is commonly used in applications requiring low barrier Schottky barrier type diodes.

BAR19-AZX by STMicroelectronics is a single mixer diode with Schottky technology. It operates in the ultra high frequency band, with a max forward voltage of 0.6V and max output current of 30A. This glass-packaged diode is ideal for applications requiring an isolated case connection and axial terminal position.

The NXP Semiconductors BA891,115 is a single microwave mixer diode with a very high frequency range. It has a max forward voltage of 1V and can handle up to 0.1A output current. This small outline diode is ideal for applications requiring high-frequency signal mixing in electronic circuits.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: UNSPECIFIED;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

Infineon's BAT15099E6327HTSA1 is a Schottky mixer diode with low barrier type, suitable for X Band applications. It features separate configuration, 2 elements, and max power dissipation of 0.1W. With a package style of small outline and surface mount capability, it operates at temperatures up to 150°C.

MIXER DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel; Maximum Forward Voltage (VF): .44 V;

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT19-AZX by STMicroelectronics is a single-config microwave mixer diode with ultra-high frequency band. Featuring a max diode capacitance of 1.2 pF and max reverse current of 0.1 uA, it is ideal for applications requiring high-frequency signal mixing in electronic circuits. With a Schottky technology and silicon diode element material, this diode operates at temperatures up to 125 °C, making it suitable for various RF applications.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;