NXP Semiconductors Microwave Mixer & Detector Diodes 150

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Noise Figure	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material
1PS70SB84,115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.7 V		SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	15 V	125 Cel		TIN	R-PDSO-G3	1			Not Qualified					e3	30	260	SILICON
1PS88SB82,115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS	ULTRA HIGH FREQUENCY		.34 V		SCHOTTKY	.2 uA	3	1 V	SMALL OUTLINE	Other Diodes	15 V	125 Cel	-65 Cel	TIN	R-PDSO-G6	1			Not Qualified					e3	30	260	SILICON
BA891,115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.1 A	1 V	1.05 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE	Rectifier Diodes	35 V	150 Cel	-65 Cel	TIN	R-PDSO-F2	1			Not Qualified	.715 W				e3	30	260	SILICON
BA423L	NXP Semiconductors	MIXER DIODE	END	NO LEAD	2	YES	ROUND	GLASS	SINGLE				3.5 pF			1		LONG FORM						O-LELF-N2			ISOLATED	Not Qualified								SILICON
BA591,115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.05 pF			1		SMALL OUTLINE	Varactors	35 V	150 Cel	-65 Cel	TIN	R-PDSO-G2	1			Not Qualified	.5 W	.8 pF			e3	30	260	SILICON
1PS66SB82,115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS			.34 V		SCHOTTKY	.2 uA	3	1 V	SMALL OUTLINE	Other Diodes	15 V	125 Cel	-65 Cel	TIN	R-PDSO-F6	1			Not Qualified					e3	30	260	SILICON
1PS88SB82	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS	ULTRA HIGH FREQUENCY		.34 V		SCHOTTKY	.2 uA	3	1 V	SMALL OUTLINE	Other Diodes	15 V	125 Cel	-65 Cel	Tin (Sn)	R-PDSO-G6	1			Not Qualified					e3	30	260	SILICON
1PS88SB82,165	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS	ULTRA HIGH FREQUENCY		.34 V		SCHOTTKY	.2 uA	3	1 V	SMALL OUTLINE	Other Diodes	15 V	125 Cel	-65 Cel	TIN	R-PDSO-G6	1			Not Qualified					e3	30	260	SILICON
1PS79SB17,115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			.35 V	1 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	4 V	150 Cel		TIN	R-PDSO-F2	1			Not Qualified					e3	30	260	SILICON
PMBD353,215	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.03 A	.6 V	1 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	4 V	100 Cel		TIN	R-PDSO-G3	1			Not Qualified			TO-236AB		e3	30	260	SILICON
BA592	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.1 A	1 V	1.4 pF			1		SMALL OUTLINE	Rectifier Diodes	35 V	150 Cel	-65 Cel		R-PDSO-G2				Not Qualified	.5 W							SILICON
934055230115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.05 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-G2	1			Not Qualified	.5 W				e3			SILICON
934056830115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.2 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE					TIN	R-PDSO-F2				Not Qualified	.715 W				e3			SILICON
BA483T/R	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA484T/R	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.6 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA481143	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1.1 pF		10 uA	1		LONG FORM			100 Cel			O-LALF-W2		8 dB	ISOLATED	Not Qualified			DO-34	4 V				SILICON
BA481116	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1.1 pF		10 uA	1		LONG FORM			100 Cel			O-LALF-W2		8 dB	ISOLATED	Not Qualified			DO-34	4 V				SILICON
BA483153	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA482153	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.2 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA591	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.05 pF			1		SMALL OUTLINE	Varactors	35 V	150 Cel	-65 Cel	Tin (Sn)	R-PDSO-G2	1			Not Qualified	.5 W	.8 pF			e3	30	260	SILICON
BA277	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.1 A	1 V	1.2 pF			1		SMALL OUTLINE	Rectifier Diodes	35 V	150 Cel	-65 Cel	TIN	R-PDSO-F2				Not Qualified	.715 W				e3			SILICON
933912210235	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2		SMALL OUTLINE			100 Cel		TIN	R-PDSO-G3	1			Not Qualified	.25 W			4 V	e3			SILICON
BA483136	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA231	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.2 A	.42 V	1.2 pF			1		LONG FORM	Rectifier Diodes	50 V				O-LALF-W2			ISOLATED	Not Qualified			DO-35					SILICON
PMBD354	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.03 A	.35 V	1 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	4 V	100 Cel		Tin (Sn)	R-PDSO-G3	1			Not Qualified			TO-236AB		e3	30	260	SILICON
934056488115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY				SCHOTTKY		1		SMALL OUTLINE					PURE TIN	R-PDSO-G3	1			Not Qualified								SILICON
PMBD352212	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2		SMALL OUTLINE			100 Cel			R-PDSO-G3				Not Qualified	.25 W			4 V				SILICON
PMBD353212	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2		SMALL OUTLINE			100 Cel			R-PDSO-G3				Not Qualified	.25 W			4 V				SILICON
BA483133	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA482AMO	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.2 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
934025520115	NXP Semiconductors	MIXER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	SINGLE	VERY HIGH FREQUENCY			1.1 pF			1		SMALL OUTLINE						R-CDSO-C2				Not Qualified						NOT SPECIFIED	NOT SPECIFIED	SILICON
BA423A133	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		50 A	.9 V	2.5 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	20 V				SILICON
933613620133	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.6 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA423A136	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		50 A	.9 V	2.5 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	20 V				SILICON
BA482136	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.2 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA483	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1		LONG FORM	Rectifier Diodes	35 V	150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA483AMO	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA423A153	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		50 A	.9 V	2.5 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	20 V				SILICON
BA484153	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.6 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
934034890113	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				2.5 pF			1		LONG FORM						O-LALF-W2			ISOLATED	Not Qualified								SILICON
BA482	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.2 pF		.1 uA	1		LONG FORM	Rectifier Diodes	35 V	150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA582	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1.1 pF	SCHOTTKY		1		SMALL OUTLINE			150 Cel			R-PDSO-G2				Not Qualified								SILICON
933463300113	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
PMBD352	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY				SCHOTTKY		2		SMALL OUTLINE						R-PDSO-G3				Not Qualified								SILICON
BA423	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				2.5 pF			1		LONG FORM						O-LALF-W2			ISOLATED	Not Qualified			DO-34					SILICON
PMBD353/T3	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY			1 pF	SCHOTTKY		2		SMALL OUTLINE			100 Cel		TIN	R-PDSO-G3				Not Qualified			TO-236AB		e3			SILICON
BA484116	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.6 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified			DO-34	35 V				SILICON
BA481113	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1.1 pF		10 uA	1		LONG FORM			100 Cel			O-LALF-W2		8 dB	ISOLATED	Not Qualified			DO-34	4 V				SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84