Toshiba Microwave Mixer & Detector Diodes 68

  1. Home
  2. Microwave Mixer & Detector Diodes
Manufacturers (1)
    • Toshiba
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 10
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

1SS295-TE85L(F)

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.03 A

.32 V

.9 pF

SCHOTTKY

25 uA

2

.5 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

4 V

SILICON

JDH2S02SL,L3F

Toshiba

MIXER DIODE

S3060D

Toshiba

MIXER DIODE

YES

250 ohm

Microwave Mixer Diodes

150 Cel

Tin/Lead (Sn/Pb)

6 dB

50 ohm

e0

4 GHz

GALLIUM ARSENIDE

12 GHz

1SS269(TE85L,F)

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.05 A

.85 V

1.2 pF

.1 uA

2

15 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS271TE85R

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

30 A

.55 V

1 pF

SCHOTTKY

.5 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

6 V

SILICON

S3006S

Toshiba

MIXER DIODE

YES

250 ohm

Microwave Mixer Diodes

150 Cel

5 dB

50 ohm

4 GHz

GALLIUM ARSENIDE

12 GHz

1SS269TE85R

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS271TE85L

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

30 A

.55 V

1 pF

SCHOTTKY

.5 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

6 V

SILICON

1SS295TE85R

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY

30 A

.32 V

.9 pF

SCHOTTKY

25 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

4 V

SILICON

1S2187

Toshiba

MIXER DIODE

NO

Microwave Mixer Diodes

Tin/Lead (Sn/Pb)

7 dB

e0

SILICON

JDV3S31CT

Toshiba

MIXER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

10.77 pF

1

CHIP CARRIER

150 Cel

R-XBCC-N3

CATHODE

SILICON

1SS269

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

Varactors

30 V

125 Cel

R-PDSO-G3

Not Qualified

.8 pF

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

JDH2S02FS

Toshiba

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

10 V

125 Cel

R-PDSO-F2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS269TE85L

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS154TE85L

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY TO S BAND

30 A

.35 V

SCHOTTKY

.5 uA

1

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

6 V

SILICON

JDH3D01S

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.025 A

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

4 V

125 Cel

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

JDH3D01FV

Toshiba

RECTIFIER DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.025 A

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

4 V

125 Cel

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS268TE85R

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

JDS2S03S

Toshiba

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

.85 V

1.2 pF

1

SMALL OUTLINE

Rectifier Diodes

30 V

150 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

e0

SILICON

1SS295

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY

30 A

.32 V

.9 pF

SCHOTTKY

25 uA

2

SMALL OUTLINE

Rectifier Diodes

4 V

125 Cel

R-PDSO-G3

Not Qualified

4 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

JDH2S01FS

Toshiba

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.025 A

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

4 V

125 Cel

R-PDSO-F2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

S3060S

Toshiba

MIXER DIODE

YES

250 ohm

Microwave Mixer Diodes

150 Cel

Tin/Lead (Sn/Pb)

5 dB

50 ohm

e0

4 GHz

GALLIUM ARSENIDE

12 GHz

1SS154(TE85L,F)

Toshiba

MIXER DIODE

YES

Microwave Mixer Diodes

125 Cel

SILICON

S3006E

Toshiba

MIXER DIODE

YES

250 ohm

Microwave Mixer Diodes

150 Cel

5.5 dB

50 ohm

4 GHz

GALLIUM ARSENIDE

12 GHz

1SS268(TE85LF)

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.05 A

.85 V

1.2 pF

PLANAR DOPED BARRIER

.1 uA

2

15 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS268

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

Varactors

30 V

125 Cel

R-PDSO-G3

Not Qualified

.8 pF

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS268TE85L

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

S3275

Toshiba

MIXER DIODE

DUAL

GULL WING

8

YES

RECTANGULAR

PLASTIC/EPOXY

2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.9 pF

SCHOTTKY

4

SMALL OUTLINE

125 Cel

R-PDSO-G8

Not Qualified

SILICON

S3060E

Toshiba

MIXER DIODE

YES

250 ohm

Microwave Mixer Diodes

150 Cel

Tin/Lead (Sn/Pb)

5.5 dB

50 ohm

e0

4 GHz

GALLIUM ARSENIDE

12 GHz

1SS154TE85R

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY TO S BAND

30 A

.35 V

SCHOTTKY

.5 uA

1

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

6 V

SILICON

JDH2S02SC

Toshiba

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

SCHOTTKY

1

CHIP CARRIER

125 Cel

R-XBCC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS295TE85L

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY

30 A

.32 V

.9 pF

SCHOTTKY

25 uA

2

SMALL OUTLINE

Rectifier Diodes

4 V

125 Cel

R-PDSO-G3

Not Qualified

4 V

SILICON

JDH2S01T

Toshiba

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.03 A

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

5 V

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

e0

SILICON

S3006D

Toshiba

MIXER DIODE

YES

250 ohm

Microwave Mixer Diodes

150 Cel

6 dB

50 ohm

4 GHz

GALLIUM ARSENIDE

12 GHz

1SS154

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY TO S BAND

30 A

.35 V

SCHOTTKY

.5 uA

1

SMALL OUTLINE

Microwave Mixer Diodes

125 Cel

R-PDSO-G3

Not Qualified

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS312(TE85L)

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.025 A

.85 V

1.2 pF

.1 uA

2

15 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

SILICON

1SS313TE85L

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS314TPH4

Toshiba

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

100 A

.85 V

1.2 pF

.1 uA

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS315TPH3

Toshiba

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

30 A

SCHOTTKY

25 uA

1

SMALL OUTLINE

Microwave Mixer Diodes

125 Cel

R-PDSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS364TE85L

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

30 V

SILICON

1SS381

Toshiba

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

100 A

.85 V

1.2 pF

.1 uA

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

R-PDSO-F2

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS315(TPH3F)

Toshiba

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.03 A

SCHOTTKY

25 uA

1

.5 V

SMALL OUTLINE

125 Cel

R-PDSO-G2

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS312TE85R

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

30 V

SILICON

1SS315TPHR2

Toshiba

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

30 A

SCHOTTKY

25 uA

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS381(TPL3)

Toshiba

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

.85 V

1.2 pF

.1 uA

1

15 V

SMALL OUTLINE

125 Cel

R-PDSO-F2

SILICON

1SS381(TPH3,F)

Toshiba

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

.85 V

1.2 pF

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

R-PDSO-F2

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS314TPHR4

Toshiba

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

100 A

.85 V

1.2 pF

.1 uA

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SS312

Toshiba

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

50 A

.85 V

1.2 pF

.1 uA

2

SMALL OUTLINE

Varactors

30 V

125 Cel

R-PDSO-G3

Not Qualified

.8 pF

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84