Microwave Mixer & Detector Diodes

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

BAT1707E6327XT

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G4

.15 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAT2402LSE6327XTSA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

HSMS-2829-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

CROSSOVER RING, 4 ELEMENTS

C BAND

.34 V

.2 pF

SCHOTTKY

.1 uA

4

1 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

ANODE AND CATHODE

Not Qualified

e4

20

260

SILICON

HSMS-282B-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND

.34 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

20

260

SILICON

HSMS-2852-BLK

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

150 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

.915 GHz

GALLIUM ARSENIDE

4 GHz

MA40264

M/a-com Technology Solutions

MIXER DIODE

DUAL

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

X BAND

SCHOTTKY

1

1 W

MICROWAVE

LOW BARRIER

.15 W

S-CDMW-F2

Not Qualified

SILICON

MA704A

Panasonic

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

.03 A

.4 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

R-PDSO-G3

Not Qualified

TO-236

10

260

SILICON

MA704WK

Panasonic

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

L BAND

SCHOTTKY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

TO-236

10

260

SILICON

MMBD330T1G

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.6 V

1.5 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.12 W

LOW REVERSE LEAKAGE

e3

30

260

SILICON

SMS7630-061

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

SCHOTTKY

1

CHIP CARRIER

ZERO BARRIER

R-PBCC-N2

1

Not Qualified

.075 W

40

260

SILICON

1PS88SB82

NXP Semiconductors

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

ULTRA HIGH FREQUENCY

.34 V

SCHOTTKY

.2 uA

3

1 V

SMALL OUTLINE

Other Diodes

15 V

125 Cel

-65 Cel

Tin (Sn)

R-PDSO-G6

1

Not Qualified

e3

30

260

SILICON

1PS88SB82,165

NXP Semiconductors

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

ULTRA HIGH FREQUENCY

.34 V

SCHOTTKY

.2 uA

3

1 V

SMALL OUTLINE

Other Diodes

15 V

125 Cel

-65 Cel

TIN

R-PDSO-G6

1

Not Qualified

e3

30

260

SILICON

BAT62E6327HTSA1

Infineon Technologies

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

ANTI-PARALLEL CONNECTED, 2 ELEMENTS

C BAND

.02 A

1 V

.6 pF

SCHOTTKY

10 uA

2

40 V

SMALL OUTLINE

Other Diodes

LOW BARRIER

125 Cel

-55 Cel

TIN

R-PDSO-G4

1

ANODE

Not Qualified

.1 W

40 V

e3

SILICON

6 GHz

BAT6804E6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

2

SMALL OUTLINE

150 Cel

TIN

R-PDSO-G3

1

.15 W

e3

SILICON

DB2J314

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

.03 A

.4 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

R-PDSO-F2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

DMF3932-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

3

YES

SQUARE

UNSPECIFIED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

S BAND

.5 pF

SCHOTTKY

2

UNCASED CHIP

Microwave Mixer Diodes

LOW BARRIER

150 Cel

S-XUUC-N3

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

SILICON

HSMS-2814-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.41 V

2 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

20 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

20

260

SILICON

HSMS-2814-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.41 V

2 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

20 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

20

260

SILICON

HSMS-2822T31

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1 pF

SCHOTTKY

2

SMALL OUTLINE

150 Cel

.25 W

TIN

R-PDSO-G3

1

Not Qualified

e3

SILICON

HSMS-282C-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

C BAND

.34 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

15 V

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

20

260

SILICON

SMS7630-005LF

Skyworks Solutions

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

X BAND

.05 A

.24 V

.3 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

1 V

ZERO BARRIER

150 Cel

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.075 W

LOW NOISE

e3

40

260

SILICON

SMS7630-006

Skyworks Solutions

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

X BAND

.05 A

.01 V

.3 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

1 V

ZERO BARRIER

150 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.075 W

LOW NOISE

e0

30

245

SILICON

SMS7630-517

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

X BAND

.24 V

.3 pF

SCHOTTKY

2

CHIP CARRIER

Other Diodes

1 V

ZERO BARRIER

150 Cel

-65 Cel

R-PBCC-N4

1

Not Qualified

.075 W

LOW NOISE

30

260

SILICON

DME2957-000

Skyworks Solutions

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

X BAND

.3 pF

SCHOTTKY

1

MICROWAVE

Microwave Mixer Diodes

MEDIUM BARRIER

R-CDMW-F2

1

6 dB

ISOLATED

Not Qualified

8 GHz

30

260

SILICON

12 GHz

HSMS-281L-TR2G

Broadcom

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

.41 V

2 pF

SCHOTTKY

.2 uA

3

15 V

SMALL OUTLINE

Other Diodes

20 V

150 Cel

-65 Cel

MATTE TIN

R-PDSO-G6

1

Not Qualified

e3

20

260

SILICON

HSMS-2852#T30

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

ULTRA HIGH FREQUENCY TO C BAND

SCHOTTKY

2

SMALL OUTLINE

150 Cel

.15 W

TIN

R-PDSO-G3

1

Not Qualified

e3

SILICON

MSS20-141-B10D

M/a-com Technology Solutions

MIXER DIODE

DUAL

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

KA BAND

.035 A

.08 pF

SCHOTTKY

1

0 V

MICROWAVE

ZERO BARRIER

150 Cel

-65 Cel

S-CDMW-F2

Not Qualified

.1 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

40 GHz

MSS20,141-B10D

Cobham Plc

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6000 ohm

KA BAND

.08 pF

SCHOTTKY

1

MICROWAVE

Other Diodes

ZERO BARRIER

150 Cel

.1 W

R-XDMW-F2

Not Qualified

LOW NOISE

2000 ohm

59 dBm

NOT SPECIFIED

NOT SPECIFIED

SILICON

40 GHz

1PS79SB17,115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.35 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

4 V

150 Cel

TIN

R-PDSO-F2

1

Not Qualified

e3

30

260

SILICON

SMS7621-060

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

K BAND

.18 pF

SCHOTTKY

1

CHIP CARRIER

LOW BARRIER

R-XBCC-N2

1

Not Qualified

.075 W

30

260

SILICON

HSMS-286K-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

C BAND

.35 V

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

MATTE TIN

R-PDSO-G6

1

ISOLATED

Not Qualified

e3

20

260

SILICON

CDP7624-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

2

YES

SQUARE

UNSPECIFIED

SINGLE

KU BAND

.575 V

.15 pF

SCHOTTKY

1

UNCASED CHIP

HIGH BARRIER

S-XUUC-N1

1

Not Qualified

LOW NOISE

3 V

30

260

SILICON

MMBD101LT1G

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.225 W

TO-236AB

e3

30

260

SILICON

CDB7620-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

2

YES

SQUARE

UNSPECIFIED

SINGLE

KU BAND

.35 V

.15 pF

SCHOTTKY

1

UNCASED CHIP

LOW BARRIER

S-XUUC-N1

1

Not Qualified

LOW NOISE

-40 dBm

2 V

40

260

SILICON

HSMS-2860-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND

SCHOTTKY

1

SMALL OUTLINE

Other Diodes

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

Not Qualified

e4

.915 GHz

20

260

SILICON

5.8 GHz

HSMS-286F-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

C BAND

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

e3

.915 GHz

20

260

SILICON

5.8 GHz

SMS3922-040LF

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND TO C BAND

.05 A

.45 V

1.03 pF

SCHOTTKY

.1 uA

1

1 V

CHIP CARRIER

150 Cel

-65 Cel

R-PBCC-N2

1

Not Qualified

.075 W

70 V

260

SILICON

6000 GHz

SMS7621-040LF

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

.05 A

.32 V

.25 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

2 V

LOW BARRIER

175 Cel

R-PBCC-N2

1

Not Qualified

.75 W

260

SILICON

CDC7630-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

1

YES

RECTANGULAR

UNSPECIFIED

SINGLE

5000 ohm

VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND

.25 pF

SCHOTTKY

1

UNCASED CHIP

Other Diodes

ZERO BARRIER

R-XUUC-N1

1

Not Qualified

.075 W

LOW NOISE

2000 ohm

52 dBm

40

260

SILICON

DB3X313N0L

Panasonic

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.13 A

.55 V

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

30 V

85 Cel

-40 Cel

R-PDSO-G3

1

TO-236AA

1 A

SILICON

DDB2265-000

Skyworks Solutions

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

1200 ohm

K BAND

.45 V

.1 pF

SCHOTTKY

1

MICROWAVE

R-CDMW-F2

1

Not Qualified

LOW NOISE

800 ohm

3 V

40

260

SILICON

DME3943-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

4

YES

SQUARE

UNSPECIFIED

BRIDGE, 4 ELEMENTS

X BAND

.3 pF

SCHOTTKY

4

UNCASED CHIP

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

S-XUUC-N4

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

SILICON

DMF2344-000

Skyworks Solutions

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

KU BAND

.15 pF

SCHOTTKY

1

MICROWAVE

Microwave Mixer Diodes

LOW BARRIER

R-CDMW-F2

1

6.5 dB

Not Qualified

12 GHz

40

260

SILICON

18 GHz

CDB7619-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

2

YES

SQUARE

UNSPECIFIED

SINGLE

K BAND

.375 V

.1 pF

SCHOTTKY

1

UNCASED CHIP

LOW BARRIER

S-XUUC-N1

Not Qualified

LOW NOISE

-50 dBm

3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

DMJ3940-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

4

YES

SQUARE

UNSPECIFIED

COMPLEX

S BAND TO X BAND

.3 pF

SCHOTTKY

8

UNCASED CHIP

Microwave Mixer Diodes

HIGH BARRIER

150 Cel

S-XUUC-N4

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

SILICON

HMPS-2822-BLK

Broadcom

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

C BAND

.34 V

1 pF

SCHOTTKY

.1 uA

2

1 V

CHIP CARRIER

Other Diodes

150 Cel

-65 Cel

Tin (Sn)

R-XBCC-N4

1

Not Qualified

e3

20

260

SILICON

HSMS-2808-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

RING, 4 ELEMENTS

.41 V

2 pF

SCHOTTKY

4

SMALL OUTLINE

Bridge Rectifier Diodes

70 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

e4

20

260

SILICON

HSMS-2808-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

RING, 4 ELEMENTS

.41 V

2 pF

SCHOTTKY

4

SMALL OUTLINE

Bridge Rectifier Diodes

70 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

e4

20

260

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84