Microwave Mixer & Detector Diodes

  1. Home
  2. Microwave Mixer & Detector Diodes
Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 10
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

MDX624

Texas Instruments

MIXER DIODE

YES

200 ohm

Microwave Mixer Diodes

125 Cel

100 ohm

25 GHz

GALLIUM ARSENIDE

85 GHz

SGD100

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

C BAND TO X BAND

.4 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

R-CDSO-G3

Not Qualified

GALLIUM ARSENIDE

12 GHz

MMSD301T1

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.6 V

1.5 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G2

1

Not Qualified

.225 W

e0

30

235

SILICON

MMSD701T1

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

70 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G2

1

Not Qualified

.225 W

e0

30

235

SILICON

NSR15ADXV6T1

Onsemi

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

MEDIUM FREQUENCY

.03 A

.68 V

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

TIN LEAD

R-PDSO-F6

Not Qualified

15 V

e0

SILICON

SMMBD330T1G

Onsemi

MIXER DIODE

YES

SINGLE

.2 A

.45 V

SCHOTTKY

1

Rectifier Diodes

30 V

125 Cel

MATTE TIN

1

1 A

e3

30

260

SILICON

SBX201C-TB-E

Onsemi

MIXER DIODE

YES

.05 A

.32 V

SCHOTTKY

Rectifier Diodes

2 V

150 Cel

TIN BISMUTH

1

e6

30

260

SILICON

NSR15SDW1T4G

Onsemi

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.415 V

1 pF

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

Other Diodes

15 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

1

Not Qualified

e3

260

SILICON

NSR15SDW1T4

Onsemi

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.415 V

1 pF

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

Other Diodes

15 V

150 Cel

-65 Cel

TIN LEAD

R-PDSO-G6

1

Not Qualified

e0

235

SILICON

NSR15ADXV6T5

Onsemi

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

MEDIUM FREQUENCY

.03 A

.68 V

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

TIN

R-PDSO-F6

1

Not Qualified

15 V

e3

30

260

SILICON

SMMBD701LT1G

Onsemi

MIXER DIODE

YES

SCHOTTKY

Other Diodes

125 Cel

MATTE TIN

1

e3

30

260

SILICON

SMMBD301LT1

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

1

SMALL OUTLINE

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.2 W

TO-236AB

e0

30

235

SILICON

NSR15DW1T1G

Onsemi

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.415 V

1 pF

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

Other Diodes

15 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

1

Not Qualified

e3

30

260

SILICON

SPD221M

Onsemi

MIXER DIODE

NO

Microwave Mixer Diodes

GALLIUM ARSENIDE

SMMBD770T1G

Onsemi

MIXER DIODE

YES

SINGLE

.2 A

.5 V

SCHOTTKY

1

Rectifier Diodes

70 V

125 Cel

MATTE TIN

1

1 A

e3

30

260

SILICON

SPD-221

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

3.9 GHz

GALLIUM ARSENIDE

18 GHz

MBD770DWT1

Onsemi

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

70 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G6

1

Not Qualified

.12 W

e0

30

235

SILICON

MBD201

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

1

CYLINDRICAL

O-PBCY-T2

TO-226AC

SILICON

NSR201MXT5G

Onsemi

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND TO KU BAND

.05 A

.32 V

.2 pF

SCHOTTKY

10 uA

1

2 V

CHIP CARRIER

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

e4

30

260

SILICON

SPD-122P

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

3.9 GHz

GALLIUM ARSENIDE

11 GHz

SPD-121M

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

3.9 GHz

GALLIUM ARSENIDE

11 GHz

MBD501

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

O-PBCY-T2

TO-226AC

SILICON

DAP222M3T5G

Onsemi

MIXER DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

3.5 pF

2

SMALL OUTLINE

150 Cel

MATTE TIN

R-PDSO-F3

1

Not Qualified

.26 W

e3

30

260

SILICON

NSVMMBD352WT1G

Onsemi

MIXER DIODE

YES

SCHOTTKY

Microwave Mixer Diodes

150 Cel

MATTE TIN

1

e3

30

260

SILICON

MMDL301T1

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.45 V

1.5 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

150 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G2

1

Not Qualified

.2 W

e0

30

235

SILICON

SBL-803

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

11 GHz

GALLIUM ARSENIDE

100 GHz

MBD110DWT1

Onsemi

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.6 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

7 V

125 Cel

TIN LEAD

R-PDSO-G6

1

Not Qualified

.12 W

e0

235

SILICON

MMDL101T1

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.6 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

7 V

150 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G2

1

Not Qualified

.2 W

LOW NOISE

e0

30

235

SILICON

CA3019

Onsemi

MIXER DIODE

10

COMPLEX

6

Not Qualified

.12 W

SILICON

NSR15DW1T1

Onsemi

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.415 V

1 pF

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

Other Diodes

15 V

150 Cel

-65 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G6

1

Not Qualified

e0

30

235

SILICON

SGD102

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND TO X BAND

.4 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

R-PDSO-G3

Not Qualified

GALLIUM ARSENIDE

12 GHz

MBD701

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

Other Diodes

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

TO-92

e0

235

SILICON

SPD-121

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

3.9 GHz

GALLIUM ARSENIDE

11 GHz

SMMBD301LT3

Onsemi

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

1

SMALL OUTLINE

TIN LEAD

R-PDSO-G3

Not Qualified

.2 W

TO-236AB

e0

SILICON

NSVMMBD353LT1G

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

MATTE TIN

1

e3

30

260

SILICON

MBD101

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

Microwave Mixer Diodes

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

TO-92

e0

235

SILICON

SBL-801

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

11 GHz

GALLIUM ARSENIDE

100 GHz

NSR15SDW1T2G

Onsemi

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.415 V

1 pF

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

Other Diodes

15 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

1

Not Qualified

e3

30

260

SILICON

NSR15SDW1T2

Onsemi

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.415 V

1 pF

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

Other Diodes

15 V

150 Cel

-65 Cel

TIN LEAD

R-PDSO-G6

1

Not Qualified

e0

235

SILICON

DAN222M3T5G

Onsemi

MIXER DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.1 A

1.2 V

3.5 pF

.004 us

2

SMALL OUTLINE

Rectifier Diodes

80 V

150 Cel

MATTE TIN

R-PDSO-F3

1

Not Qualified

.26 W

e3

30

260

SILICON

SPD-221P

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

3.9 GHz

GALLIUM ARSENIDE

11 GHz

SBL-122

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

3.9 GHz

GALLIUM ARSENIDE

12 GHz

SPD121P

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

3.9 GHz

GALLIUM ARSENIDE

11 GHz

MBD701G

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

Other Diodes

125 Cel

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

TO-92

e1

260

SILICON

ESGD100

Onsemi

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

.32 pF

SCHOTTKY

1

CHIP CARRIER

Microwave Mixer Diodes

150 Cel

R-XBCC-N2

Not Qualified

SILICON

SPD221R

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

GALLIUM ARSENIDE

SNSR201MXT5G

Onsemi

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND TO KU BAND

.05 A

.32 V

.2 pF

SCHOTTKY

.75 uA

1

1.5 V

CHIP CARRIER

2 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

1

e4

30

260

SILICON

SBL-121

Onsemi

MIXER DIODE

YES

Microwave Mixer Diodes

150 Cel

3.9 GHz

GALLIUM ARSENIDE

12 GHz

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84