Microwave Mixer & Detector Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Noise Figure	Case Connection	Qualification	Maximum Power Dissipation	JEDEC-95 Code	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material
BA423AL115	NXP Semiconductors	MIXER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE		50 A	.9 V	2.5 pF		.1 uA	1		LONG FORM			150 Cel			O-LELF-R2			ISOLATED	Not Qualified	.21 W		20 V					SILICON
BA423A	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE			.9 V	2.5 pF	SCHOTTKY		1		LONG FORM	Rectifier Diodes	20 V	150 Cel			O-LALF-W2			ISOLATED	Not Qualified		DO-34						SILICON
PMBD353-T	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY			1 pF	SCHOTTKY		2		SMALL OUTLINE			100 Cel		TIN	R-PDSO-G3				Not Qualified		TO-236AB			e3			SILICON
BA423AL135	NXP Semiconductors	MIXER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE		50 A	.9 V	2.5 pF		.1 uA	1		LONG FORM			150 Cel			O-LELF-R2			ISOLATED	Not Qualified	.21 W		20 V					SILICON
934054935335	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.2 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-F2				Not Qualified	.715 W				e3			SILICON
BA482116	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.2 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified		DO-34	35 V					SILICON
PMBD352215	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2		SMALL OUTLINE			100 Cel			R-PDSO-G3				Not Qualified	.25 W		4 V					SILICON
PMBD352235	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	2		SMALL OUTLINE			100 Cel			R-PDSO-G3				Not Qualified	.25 W		4 V					SILICON
BA278,115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.2 pF			1		SMALL OUTLINE			150 Cel	-65 Cel		R-PDSO-F2					.715 W							SILICON
BA481136	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1.1 pF		10 uA	1		LONG FORM			100 Cel			O-LALF-W2		8 dB	ISOLATED	Not Qualified		DO-34	4 V					SILICON
934056580165	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS	ULTRA HIGH FREQUENCY				SCHOTTKY		3		SMALL OUTLINE			125 Cel		TIN	R-PDSO-G6				Not Qualified					e3			SILICON
BA423AL112	NXP Semiconductors	MIXER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE		50 A	.9 V	2.5 pF		.1 uA	1		LONG FORM			150 Cel			O-LELF-R2			ISOLATED	Not Qualified	.21 W		20 V					SILICON
934055230135	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.05 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE					TIN	R-PDSO-G2	1			Not Qualified	.5 W				e3			SILICON
BA482T/R	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1.2 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified		DO-34	35 V					SILICON
BA277-01	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.2 pF			1		SMALL OUTLINE						R-PDSO-F2				Not Qualified	.315 W							SILICON
BA277,115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.1 A	1 V	1.2 pF			1		SMALL OUTLINE	Rectifier Diodes	35 V	150 Cel	-65 Cel	TIN	R-PDSO-F2				Not Qualified	.715 W				e3			SILICON
934054935115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.2 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-F2				Not Qualified	.715 W				e3			SILICON
BA223	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				3.5 pF			1		LONG FORM						O-LALF-W2			ISOLATED	Not Qualified		DO-34						SILICON
BA423A113	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		50 A	.9 V	2.5 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified		DO-34	20 V					SILICON
BA281	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE				1.2 pF			1		LONG FORM						O-PALF-W2			ISOLATED	Not Qualified		DO-35						SILICON
BA278	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.2 pF			1		SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-F2				Not Qualified	.715 W				e3			SILICON
934056580115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS	ULTRA HIGH FREQUENCY				SCHOTTKY		3		SMALL OUTLINE			125 Cel		TIN	R-PDSO-G6				Not Qualified					e3			SILICON
BA792T/R	NXP Semiconductors	MIXER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	SINGLE	VERY HIGH FREQUENCY			1.1 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE					TIN	R-CDSO-C2				Not Qualified					e3			SILICON
BA792,115	NXP Semiconductors	MIXER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	SINGLE	VERY HIGH FREQUENCY	.1 A	1.1 V	1.1 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE	Rectifier Diodes	35 V	150 Cel		Tin (Sn)	R-CDSO-C2				Not Qualified					e3			SILICON
BA682T/R	NXP Semiconductors	MIXER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1 V	1.5 pF	SCHOTTKY	.05 uA	1		LONG FORM			150 Cel			O-LELF-R2			ISOLATED	Not Qualified			35 V					SILICON
PMBD353,235	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.03 A	.6 V	1 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	4 V	100 Cel		TIN	R-PDSO-G3	1			Not Qualified		TO-236AB			e3	30	260	SILICON
933410700235	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY			1 pF	SCHOTTKY		1		SMALL OUTLINE			100 Cel		PURE TIN	R-PDSO-G3	1	8 dB		Not Qualified								SILICON
BA423A143	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		50 A	.9 V	2.5 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified		DO-34	20 V					SILICON
934054935135	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.2 pF	PLANAR DOPED BARRIER		1		SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-F2				Not Qualified	.715 W				e3			SILICON
BA483116	NXP Semiconductors	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1.2 V	1 pF		.1 uA	1		LONG FORM			150 Cel			O-LALF-W2			ISOLATED	Not Qualified		DO-34	35 V					SILICON
BA591T/R	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY			1.05 pF			1		SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-G2				Not Qualified	.5 W				e3			SILICON
934056491115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY				SCHOTTKY		2		SMALL OUTLINE					TIN	R-PDSO-G3				Not Qualified					e3			SILICON
BA683-T	NXP Semiconductors	MIXER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1 V	1.5 pF	SCHOTTKY	.05 uA	1		LONG FORM			150 Cel			O-LELF-R2			ISOLATED	Not Qualified			35 V					SILICON
BA682-T	NXP Semiconductors	MIXER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	100 A	1 V	1.5 pF	SCHOTTKY	.05 uA	1		LONG FORM			150 Cel			O-LELF-R2			ISOLATED	Not Qualified			35 V					SILICON
PMBD353	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.03 A	.6 V	1 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	4 V	100 Cel		Tin (Sn)	R-PDSO-G3	1			Not Qualified		TO-236AB			e3	30	260	SILICON
934056490115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY				SCHOTTKY		2		SMALL OUTLINE					PURE TIN	R-PDSO-G3	1			Not Qualified								SILICON
1PS66SB17,115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS			.35 V	1 pF	SCHOTTKY	.25 uA	3	3 V	SMALL OUTLINE	Other Diodes		150 Cel	-65 Cel	TIN	R-PDSO-F6	1			Not Qualified					e3	30	260	SILICON
1PS66SB63	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS				.5 pF	SCHOTTKY		3		SMALL OUTLINE						R-PDSO-F6				Not Qualified								SILICON
1PS66SB17	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS			.35 V	1 pF	SCHOTTKY	.25 uA	3	3 V	SMALL OUTLINE	Other Diodes		150 Cel	-65 Cel	Tin (Sn)	R-PDSO-F6	1			Not Qualified					e3	30	260	SILICON
1PS66SB82	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS			.34 V		SCHOTTKY	.2 uA	3	1 V	SMALL OUTLINE	Other Diodes		125 Cel	-65 Cel	Tin (Sn)	R-PDSO-F6	1			Not Qualified					e3	30	260	SILICON
1PS66SB63,115	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	6	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS				.5 pF	SCHOTTKY		3		SMALL OUTLINE			125 Cel			R-PDSO-F6				Not Qualified								SILICON
BAT17-T	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY			1 pF	SCHOTTKY		1		SMALL OUTLINE			100 Cel			R-PDSO-G3		8 dB		Not Qualified		TO-236AB						SILICON
BAT17212	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	30 A	.6 V	1 pF	SCHOTTKY	.25 uA	1		SMALL OUTLINE			100 Cel			R-PDSO-G3		8 dB		Not Qualified	.25 W		4 V					SILICON
1PS76SB17T/R	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.03 A	.6 V	1 pF	SCHOTTKY		1		SMALL OUTLINE	Rectifier Diodes	4 V	150 Cel		MATTE TIN	R-PDSO-G2				Not Qualified					e3		260	SILICON
1PS70SB85,115	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.7 V		SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	15 V	125 Cel		TIN	R-PDSO-G3	1			Not Qualified					e3	30	260	SILICON
BAS70-06T/R	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS		.07 A	.41 V	2 pF	SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	70 V	150 Cel		Tin (Sn)	R-PDSO-G3				Not Qualified				.1 A	e3	40	260	SILICON
1PS79SB63T/R	NXP Semiconductors	MIXER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				.5 pF	SCHOTTKY		1		SMALL OUTLINE					TIN	R-PDSO-F2				Not Qualified					e3			SILICON
1PS70SB85	NXP Semiconductors	MIXER DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.7 V		SCHOTTKY		2		SMALL OUTLINE	Rectifier Diodes	15 V	125 Cel		Tin (Sn)	R-PDSO-G3	1			Not Qualified					e3	30	260	SILICON

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84