PIN DIODE PIN Diodes 1,939

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
JDP2S12CR(TE85L)	Toshiba	PIN DIODE				YES			10 mA						40 V		PIN Diodes		175 Cel				.7 ohm					1 pF	180 V					100 MHz
JDP2S01S	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR	TIN LEAD	R-PDSO-F2	1 ohm			Not Qualified		.65 pF	30 V	e0			SILICON	100 MHz
JDP2S04E(TPL3,F)	Toshiba	PIN DIODE				YES									50 V		PIN Diodes		125 Cel									.25 pF	50 V
1SV99	Toshiba	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	ULTRA HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	CYLINDRICAL			125 Cel	ATTENUATOR; SWITCHING	Tin/Lead (Sn/Pb)	O-PBCY-T2	10 ohm			Not Qualified			50 V	e0			SILICON	100 MHz
JDP4P02U(TE85L)	Toshiba	PIN DIODE				YES									1 V		PIN Diodes		125 Cel									.3 pF	30 V
1SV172TE85L	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified		.25 pF	50 V				SILICON
JDP2S05CT	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.42 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		R-XBCC-N2	2.2 ohm			Not Qualified		.32 pF	20 V				SILICON	100 MHz
JDP2S04E(TPH3,F)	Toshiba	PIN DIODE				YES									50 V		PIN Diodes		125 Cel									.25 pF	50 V
JDP2S01U(TPH3)	Toshiba	PIN DIODE				YES			10 mA						1 V		PIN Diodes		125 Cel				1 ohm					.9 pF	30 V					100 MHz
1SV172TE85R2	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified			50 V				SILICON
JDP2S01U	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	ULTRA HIGH FREQUENCY	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G2	1 ohm			Not Qualified		.9 pF	30 V				SILICON	100 MHz
JDP3C02AU(TE85L)	Toshiba	PIN DIODE				YES			10 mA	COMMON CATHODE, 2 ELEMENTS				2	1 V		PIN Diodes		150 Cel				1.5 ohm					.28 pF	30 V					100 MHz
1SV172(TE85L,F)	Toshiba	PIN DIODE				YES									50 V		PIN Diodes		125 Cel									.25 pF	50 V
1SV308,L3F(T	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			125 Cel	SWITCHING		R-PDSO-F2							30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
JDP2S02AS	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR	TIN LEAD	R-PDSO-F2	1.5 ohm			Not Qualified		.3 pF	30 V	e0			SILICON	100 MHz
JDP2S12CR(TE85L,Q)	Toshiba	PIN DIODE				YES			10 mA						40 V		PIN Diodes		175 Cel				.7 ohm					1 pF	180 V					100 MHz
1SV307	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-G2	1.1 ohm			Not Qualified		.5 pF	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1500 MHz
JDP2S02T(TPH3)	Toshiba	PIN DIODE				YES			10 mA						1 V		PIN Diodes		125 Cel				1.5 ohm					.3 pF	30 V					100 MHz
JDP3C04TU	Toshiba	PIN DIODE	DUAL	FLAT	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			150 Cel	ATTENUATOR		R-PDSO-F3	1.5 ohm			Not Qualified							SILICON
JDP2S08SC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		R-XBCC-N2	1.5 ohm			Not Qualified		.21 pF	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
JDP2S01T(TPH3)	Toshiba	PIN DIODE				YES			10 mA						1 V		PIN Diodes		125 Cel				1 ohm					.65 pF	30 V					100 MHz
1SV172TE85R	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified			50 V				SILICON
1SV172TE85L2	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified			50 V				SILICON
JDP3C02AU,LF	Toshiba	PIN DIODE
1SV308,L3F	Toshiba	PIN DIODE
1SV237TE85R	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G4				Not Qualified			50 V				SILICON
1SV252	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR	Tin/Lead (Sn/Pb)	R-PDSO-G3	10 ohm			Not Qualified		.25 pF	50 V	e0			SILICON
1SV252TE85L	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified		.25 pF	50 V				SILICON
1SV271	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G2	4.5 ohm			Not Qualified		.25 pF	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
1SV237	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	Varactors	50 V	125 Cel	ATTENUATOR	Tin/Lead (Sn/Pb)	R-PDSO-G4			CATHODE	Not Qualified		.25 pF	50 V	e0			SILICON
1SV252(TE85L,F)	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3	10 ohm					.2 pF	50 V				SILICON	100 MHz
1SV237TE85L	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	Varactors	50 V	125 Cel	ATTENUATOR		R-PDSO-G4				Not Qualified		.25 pF	50 V				SILICON
1SV237(TE85L,F)	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G4			CATHODE			.25 pF	50 V				SILICON
1SV252TE85R	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified			50 V				SILICON
1SV271(TPH3)	Toshiba	PIN DIODE				YES			10 mA						50 V		PIN Diodes		125 Cel				4.5 ohm					.25 pF	50 V					100 MHz
HVC136	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE	HIGH FREQUENCY	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F2	2.5 ohm			Not Qualified	.15 W		60 V				SILICON	100 MHz
HVM132WKTR	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS		.5 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE				SWITCHING		R-PDSO-G3	2 ohm			Not Qualified	.15 W		60 V				SILICON
HVC133TRV	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				SWITCHING		R-PDSO-F2	.7 ohm			Not Qualified	.15 W		15 V				SILICON
RKP402KS	Renesas Electronics	PIN DIODE	DUAL	FLAT	12	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SEPARATE, 5 ELEMENTS		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	5	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F12	1.3 ohm			Not Qualified	.1 W	.35 pF	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
HVM14S	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G3	7 ohm			Not Qualified	.1 W		50 V				SILICON	100 MHz
RKP201KK	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F2	2 ohm	1		Not Qualified	.15 W	.35 pF	30 V				SILICON	100 MHz
RKP413KS	Renesas Electronics	PIN DIODE	DUAL	FLAT	12	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SEPARATE, 6 ELEMENTS		.31 pF	POSITIVE-INTRINSIC-NEGATIVE	6	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F12	1.5 ohm			Not Qualified		.31 pF	30 V				SILICON	100 MHz
RKP301WKQE#P1	Renesas Electronics	PIN DIODE				YES			10 mA	COMMON CATHODE, 2 ELEMENTS				2	20 V		PIN Diodes		125 Cel				2.5 ohm					.3 pF	30 V					100 MHz
RKP300KK	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F2	3.7 ohm			Not Qualified	.1 W	.25 pF	30 V				SILICON	100 MHz
RKP409KS#P1	Renesas Electronics	PIN DIODE				YES			2 mA								PIN Diodes		125 Cel				2.5 ohm						30 V					100 MHz
HVU133TRV	Renesas Electronics	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				SWITCHING		R-PDSO-G2	.7 ohm			Not Qualified	.15 W		15 V				SILICON
HVC131-E	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			125 Cel	SWITCHING	TIN BISMUTH	R-PDSO-F2	1 ohm	1		Not Qualified	.15 W			e6			SILICON
HVM14SRTR	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE				ATTENUATOR		R-PDSO-G3	7 ohm			Not Qualified	.1 W		50 V				SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.